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Substrate polishing metrology using interference signals 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-049/00
출원번호 UP-0838808 (2007-08-14)
등록번호 US-7731566 (2010-06-29)
발명자 / 주소
  • Birang, Manoocher
  • Pyatigorsky, Grigory
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Fish & Richardson
인용정보 피인용 횟수 : 4  인용 특허 : 68

초록

A method of polishing a substrate includes holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen, creating relative motion between the substrate and the polishing pad to polish a side of the substrate, generating a light beam and directing

대표청구항

What is claimed is: 1. A method of polishing a substrate, comprising: holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen; creating relative motion between the substrate and the polishing pad to polish a side of the substrate; generatin

이 특허에 인용된 특허 (68)

  1. Manoocher Birang ; Boguslaw Swedek, Adaptive endpoint detection for chemical mechanical polishing.
  2. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  3. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  4. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  5. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  6. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
  7. Hyde Thomas C. (Chandler AZ) Roberts John V. H. (Newark DE), Apparatus for interlayer planarization of semiconductor material.
  8. Doan Trung T. (Boise ID) Meikle Scott (Boise ID), Chemical-mechanical polishing processes of planarizing insulating layers.
  9. Rostoker Michael D. (San Jose CA), Detecting the endpoint of chem-mech polishing and resulting semiconductor device.
  10. Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT), Device and method for detecting an end point in polishing operation.
  11. Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT), Device for detecting an end point in polishing operations.
  12. Swedek Boguslaw ; Wiswesser Andreas Norbert,DEX, Endpoint detection with light beams of different wavelengths.
  13. Iyer Ravi (Boise ID), Endpoint regulator and method for regulating a change in wafer thickness in chemical-mechanical planarization of semicon.
  14. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  15. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  16. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  17. Kruse James A. (22937 Ostronic Drive Woodland Hills CA 91364), Grinding tool.
  18. Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT), In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection.
  19. Miller Gabriel L. (Westfield NJ) Wagner Eric R. (South Plainfield NJ), In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection.
  20. Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY), In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing.
  21. Lustig Naftali E. (Croton on Hudson NY) Feenstra Randall M. (Mt. Kisco NY) Guthrie William L. (Hopewell Junction NY), In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage.
  22. Redeker Fred C. ; Birang Manoocher ; Li Shijian ; Somekh Sasson, In-situ monitoring of linear substrate polishing operations.
  23. Tang Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical po.
  24. Cheng David (San Jose CA) Hartlage Robert P. (Santa Clara CA) Zhang Wesley W. (Burlingame CA), Laser interferometer system for monitoring and controlling IC processing.
  25. Dunton Samuel Vance ; Xiong Yizhi, Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process.
  26. Wiswesser Andreas Norbert,DEX ; Pan Judon Tony ; Swedek Boguslaw, Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers.
  27. Sandhu Gurtej Singh (Boise ID), Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers.
  28. Wiswesser Andreas Norbert,DEX ; Schoenleber Walter,DEX ; Swedek Boguslaw ; Birang Manoocher, Method and apparatus for determining substrate layer thickness during chemical mechanical polishing.
  29. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
  30. Wiswesser Andreas Norbert,DEX ; Schoenleber Walter,DEX ; Swedek Boguslaw, Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing.
  31. Schultz Laurence D. (Boise ID), Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.
  32. Schultz Laurence D. (Boise ID), Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.
  33. Enke Knut (Johannesberg DEX) Hussla Ingo (Hanau DEX) Lorenz Gerhard (Alzenau DEX), Method and apparatus for monitoring layer erosion in a dry-etching process.
  34. Doan Trung T. (Boise ID) Grief Malcolm (Boise ID) Schultz Laurence D. (Boise ID), Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches.
  35. Sandhu Gurtej S. (Boise) Doan Trung T. (Boise ID), Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image o.
  36. Cote William J. (Poughquag NY), Method for determining planarization endpoint during chemical-mechanical polishing.
  37. Curtis Bernard J. (Gattikon CHX), Method for end point detection in a plasma etching process.
  38. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
  39. Ping-Yi Chang TW, Method of CMP endpoint detection.
  40. Carr Jeffrey W. (Fishkill NY) David Lawrence D. (Wappingers Falls NY) Guthrie William L. (Hopewell Junction NY) Kaufman Frank B. (Amawalk NY) Patrick William J. (Newburgh NY) Rodbell Kenneth P. (Poug, Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor.
  41. Nenadic Anton (Red Hook NY) Pasco Robert W. (Wappingers Falls NY), Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor.
  42. Birang Manoocher ; Gleason Allan ; Guthrie William L., Method of forming a transparent window in a polishing pad.
  43. Birang, Manoocher; Gleason, Allan; Guthrie, William L., Method of forming a transparent window in a polishing pad.
  44. Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT), Method of measuring changes in impedance of a variable impedance load by disposing an impedance connected coil within th.
  45. Brunsch Arwed (Stuttgart DEX) Ruh Wolf-Dieter (Sindelfingen DEX) Trippel Gerhard (Sindelfingen DEX), Method of measuring the thickness of the removed layer in subtractive workpiece processing.
  46. Masuko Masami (Tokyo JPX) Ichikawa Chikanobu (Koshoku JPX), Method of ultrasonic control for lapping and an apparatus therefor.
  47. Roberts John V. H. ; Pinheiro Barry Scott ; James David B., Molded polishing pad having integral window.
  48. Koos Daniel A. (Boise ID) Meikle Scott (Boise ID), Optical end point detection methods in semiconductor planarizing polishing processes.
  49. Perry Arthur C., Pegs for orbital implants.
  50. Takahashi Tsutomu (Yokohama JPX) Tohyama Keiichi (Kawasaki JPX) Takahashi Tamami (Yamato JPX), Polishing apparatus having endpoint detection device.
  51. Hiyama Hirokuni,JPX ; Wada Yutaka,JPX, Polishing apparatus including thickness or flatness detector.
  52. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
  53. Moriyama Shigeo (Tama JPX) Kawamura Yoshio (Kokubunji JPX) Homma Yoshio (Hinode-machi JPX) Kusukawa Kikuo (Fujino-machi JPX) Furusawa Takeshi (Hachioji JPX), Polishing method.
  54. Tuttle Mark E. (Boise ID), Polishing pad.
  55. Manzonie Adam ; Akram Salman, Polishing pad for chemical-mechanical planarization of a semiconductor wafer.
  56. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
  57. Sexton John S. (Bobcat ; West Street Odiham GB2) Wright Derek N. (No. 5 Eagle Close ; Heathlake Crowthorne ; Berkshire GB2), Polishing pad with abrasive particles in a non-porous binder.
  58. Tuttle Mark E. (Boise ID), Polishing pad with controlled abrasion rate.
  59. Tolles, Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.
  60. Tuttle Mark E. (Boise ID), Polishing pad with uniform abrasion.
  61. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
  62. Roberts John V. H. (Newark DE), Polishing pads.
  63. Cook Lee M. (Steelville PA) Roberts John V. H. (Newark DE) Jenkins Charles W. (Newark DE) Pillai Raj R. (Newark DE), Polishing pads and methods for their use.
  64. Yu Chris C. (Austin TX), Polishing pads used to chemical-mechanical polish a semiconductor substrate.
  65. Allen Franklin L. (Sherman TX) Smith William L. (Howe TX) Debner Thomas G. (Howe TX) Olmstead Dennis L. (Sherman TX), Semiconductor polishing pad.
  66. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID), System and method for real-time control of semiconductor a wafer polishing, and a polishing head.
  67. Lund Douglas E., System and method of automatically polishing semiconductor wafers.
  68. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.

이 특허를 인용한 특허 (4)

  1. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  2. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  3. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  4. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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