Organic light emitting diodes (OLEDs) including a barrier layer and method of manufacture
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01J-001/62
H01J-063/04
출원번호
UP-0497427
(2002-11-27)
등록번호
US-7733008
(2010-06-29)
우선권정보
SG-200107343-6(2001-11-28)
국제출원번호
PCT/SG2002/000276
(2002-11-27)
§371/§102 date
20040528
(20040528)
국제공개번호
WO03/047317
(2003-06-05)
발명자
/ 주소
Ke, Lin
Ramadas, Senthil Kumar
Chua, Soo Jin
출원인 / 주소
Agency for Science, Technology and Research
대리인 / 주소
TraskBritt
인용정보
피인용 횟수 :
7인용 특허 :
9
초록▼
An Organic Light Emitting Diode (OLED) which is adapted to inhibit the formation and growth of non-emissive areas known as “dark spots.” The OLED comprises an anode disposed on a substrate, a cathode, an electroluminescent (EL) layer disposed between the anode and the cathode and a hol
An Organic Light Emitting Diode (OLED) which is adapted to inhibit the formation and growth of non-emissive areas known as “dark spots.” The OLED comprises an anode disposed on a substrate, a cathode, an electroluminescent (EL) layer disposed between the anode and the cathode and a hole transport layer disposed between the anode and the EL layer. The OLED has one or more dielectric organic barrier layers disposed between one or more of the OLED's layers. These barrier layers are made from an organic polymer and are adapted to resist permeation by oxygen and moisture and to inhibit metal migration.
대표청구항▼
What is claimed is: 1. An organic light emitting diode (OLED), comprising: an anode disposed on a substrate; a cathode; an electroluminescent (EL) layer disposed between the anode and the cathode; a hole transport layer disposed between the anode and the EL layer; an electron injecting layer dispos
What is claimed is: 1. An organic light emitting diode (OLED), comprising: an anode disposed on a substrate; a cathode; an electroluminescent (EL) layer disposed between the anode and the cathode; a hole transport layer disposed between the anode and the EL layer; an electron injecting layer disposed between the EL layer and the cathode; and at least one dielectric organic barrier layer disposed between and in contact with the cathode and the electron injecting layer, the at least one dielectric organic barrier layer having a structure to at least one of: resist permeation by oxygen; resist permeation by moisture; and inhibit metal migration. 2. An OLED according to claim 1, further comprising at least another dielectric organic barrier layer disposed between and in contact with the EL layer and the cathode. 3. An OLED according to claim 1, further comprising at least another dielectric organic barrier layer disposed between either: the anode and the hole transport layer; or the hole transport layer and the EL layer. 4. An OLED according to claim 3, wherein the at least one dielectric organic barrier layer is disposed between the anode and the hole transport layer and in contact with at least one of the anode and the hole transport layer. 5. An OLED according to claim 1, wherein the at least one dielectric organic barrier layer is substantially transparent in the visible wavelength range. 6. An OLED according to claim 1, wherein the at least one dielectric organic barrier layer inhibits metal ion migration under electrical fields. 7. An OLED according to claim 1, wherein the at least one dielectric organic barrier layer has a moisture barrier property in a range of from about 0.1 g/m2/day to about 50 g/m2/day at about 39° C. 8. An OLED according to claim 1, wherein a thickness of the at least one dielectric organic barrier layer lies in a range of from 1 nm to 20 nm. 9. An OLED according to claim 1, further comprising an encapsulation layer at least partially encapsulating the OLED, the encapsulation layer structured to resist permeation by oxygen and/or moisture. 10. An OLED according to claim 1, wherein the at least one dielectric organic barrier layer is deposited by a coating technique including: spin coating; vacuum deposition; or chemical Vapor deposition. 11. An OLED according to claim 9, wherein the encapsulation layer is at least partially made from a polymer. 12. An OLED according to claim 9, wherein the encapsulation layer is an organic encapsulation layer. 13. An OLED according to claim 12, wherein the organic encapsulation layer is at least partially made from a polymer. 14. An OLED according to claim 9, wherein a thickness of the encapsulation layer lies in a range of from 1 nm to 30 μm. 15. An OLED according to claim 9, wherein the encapsulation layer is deposited by a coating technique including: spin coating; vacuum deposition; or chemical vapor deposition. 16. An OLED according to claim 11, wherein the polymer is selected from the group consisting of: polyimides; polytetrafluoroethylene, a fluorinated ethylene propylene copolymer, a perfluoroalkoxy copolymer resin, or a copolymer of ethylene and tetrafluoroethylene; and parylene. 17. An OLED according to claim 11, wherein the polymer is parylene. 18. An OLED according to claim 1, wherein the substrate is structured to resist permeation by at least one of oxygen and moisture and is at least partially made from a rigid or flexible material. 19. An OLED according to claim 18, wherein the substrate is formed of plastic or glass. 20. An OLED according to claim 1, wherein a thickness of the at least one dielectric organic barrier layer is within tunneling range. 21. An OLED according to claim 20, wherein the at least one dielectric organic barrier layer is structured to lower an effective barrier height for electron injection and enhance a luminescence quantum efficiency of the OLED. 22. An OLED according to claim 1, wherein at least one of the cathode and the anode is at least partially made from at least one of the following materials: organic metals; inorganic metals; organic metal oxides; and inorganic metal oxides. 23. An OLED according to claim 22, wherein the anode is formed of indium tin oxide. 24. An OLED according claim 22, wherein the cathode is formed of calcium, magnesium, silver, aluminum, alloys of at least two of these metals, or lithium alloys. 25. An OLED according to claim 22, wherein the cathode is at least partially formed by sputtering. 26. An OLED according to claim 25, wherein the cathode has few or no pinholes. 27. An OLED according to claim 25, wherein at least one of the at least one dielectric organic barrier layer is a protective barrier layer disposed between and in contact with the EL layer and the cathode and is structured to protect the EL layer from damage due to effects of the sputtering process. 28. An OLED according to claim 27, wherein the protective barrier layer is structured to protect the EL layer from damage due to at least one of: ion bombardment; radiation; and metal migration. 29. An organic light emitting diode (OLED), comprising: an anode disposed on a substrate; a cathode; an electroluminescent (EL) layer disposed between the anode and the cathode; a hole transport layer disposed between the anode and the EL layer; at least one dielectric organic barrier layer disposed between and in contact with the EL layer and the cathode, the at least one dielectric organic barrier layer having a structure to at least one of: resist permeation by oxygen; resist permeation by moisture; and inhibit metal migration; and at least another dielectric organic barrier layer disposed between the hole transport layer and the anode. 30. An OLED according to claim 29, further comprising an encapsulation layer at least partially encapsulating the OLED, the encapsulation layer structured to resist permeation by at least one of oxygen and moisture. 31. An organic light emitting diode (OLED), comprising: an anode disposed on a substrate; a cathode; an electroluminescent (EL) layer disposed between the anode and the cathode; a hole transport layer disposed between the anode and the EL layer; at least one dielectric organic barrier layer disposed between and in contact with either: the anode and the hole transport layer; or the hole transport layer and the EL layer; the at least one dielectric organic barrier layer having a structure to at least one of: resist permeation by oxygen; resist permeation by moisture; and inhibit metal migration; and at least another dielectric organic barrier layer disposed between the hole transport layer and the anode. 32. An OLED according to claim 31, further comprising an encapsulation layer at least partially encapsulating the OLED, the encapsulation layer structured to resist permeation by oxygen and/or moisture. 33. A method of manufacturing an organic light emitting diode (OLED) comprising: forming an anode on a substrate; forming a hole transport layer above the anode; forming an electroluminescent (EL) layer above the hole transport layer; forming a electrode injecting layer above the EL layer; forming a cathode above the EL layer; and forming at least one dielectric organic barrier layer disposed between and in contact with the electrode injecting layer and the cathode, wherein the at least one dielectric organic barrier layer is structured to at least one of: resist permeation by oxygen; resist permeation by moisture; and inhibit metal migration. 34. A method according to claim 33, wherein a first dielectric organic barrier layer is formed on the hole transport layer prior to formation of the EL layer. 35. A method according to claim 33, wherein a second dielectric organic barrier layer is formed on the EL layer prior to formation of the cathode. 36. A method according to claim 33, wherein a first dielectric organic barrier layer is formed on the anode and a second dielectric organic barrier layer is formed on the EL layer. 37. A method according to claim 33, wherein a first dielectric organic barrier layer is formed on the hole transport layer and a second dielectric organic barrier layer is formed on the EL layer. 38. A method according to claim 33, wherein each dielectric organic barrier layer is deposited by a coating technique including: spin coating; vacuum deposition; or chemical vapor deposition. 39. A method according to claim 33, wherein the at least one dielectric organic barrier layer is at least partially made from a polymer. 40. A method according to claim 33, wherein the at least one dielectric organic barrier layer is formed having a thickness in a range of from about 1 nm to 20 mm. 41. A method according to claim 33, further including the formation of an encapsulation layer at least partially encapsulating the OLED and structured to resist permeation by at least one of oxygen and moisture. 42. A method according to claim 41, wherein the encapsulation layer is an organic encapsulation layer formed at least partially from a polymer. 43. A method according to claim 42, wherein the organic encapsulation layer is formed having a thickness of from about 1 nm to about 30 μm. 44. A method according to claim 41, wherein the encapsulation layer is deposited by a process selected from: spin coating; vacuum deposition; or chemical vapor deposition. 45. A method according to claim 33, wherein the cathode is formed by sputtering.
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이 특허에 인용된 특허 (9)
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