Glass frits, conductive inks and articles having conductive inks applied thereto are described. According to one or more embodiments, glass frits with no intentionally added lead comprise TeO2 and one or more of Bi2O3, SiO2 and combinations thereof. One embodiment of the glass frit includes B2O3, an
Glass frits, conductive inks and articles having conductive inks applied thereto are described. According to one or more embodiments, glass frits with no intentionally added lead comprise TeO2 and one or more of Bi2O3, SiO2 and combinations thereof. One embodiment of the glass frit includes B2O3, and can further include ZnO, Al2O3 and/or combinations thereof. One embodiment provides for conductive inks which include a glass frit with no intentionally added lead and comprising TeO2 and one or more of Bi2O3, SiO2 and combinations thereof. Another embodiment includes articles with substrates such as semiconductors or glass sheets, having conductive inks disposed thereto, wherein the conductive ink includes glass frits having no intentionally added lead.
대표청구항▼
What is claimed is: 1. A frit for a conductive ink for application to an anti-reflective coating on a semiconductor for use as a photovoltaic cell comprising: TeO2, B2O3, Bi2O3, and SiO2, the frit containing no intentionally-added lead, such that upon firing, the frit penetrates the anti-reflective
What is claimed is: 1. A frit for a conductive ink for application to an anti-reflective coating on a semiconductor for use as a photovoltaic cell comprising: TeO2, B2O3, Bi2O3, and SiO2, the frit containing no intentionally-added lead, such that upon firing, the frit penetrates the anti-reflective coating to enable formation of ohmic contact between the conductive ink and the semiconductor. 2. The frit of claim 1, further comprising at least one first oxide component selected from one or more of ZnO, Al2O3 and combinations thereof. 3. The frit of claim 1, further comprising at least one second oxide component selected from one or more of Ag2O, Sb2O3, GeO2, In2O3, P2O5, V2O5, Nb2O5, Ta2O5 and combinations thereof. 4. The frit of claim 2 further comprising at least one second oxide component selected from one or more of Ag2O, Sb2O3, GeO2, In2O3, P2O5, V2O5, Nb2O5, Ta2O5 and combinations thereof. 5. The frit of claim 1 further comprising about 0% added alkali metal oxide component selected from one or more of Na2O, Li2O, K2O and combinations thereof. 6. The frit of claim 1 further comprising at least one alkaline earth metal oxide component selected from one or more of BaO, CaO, MgO, SrO and combinations thereof. 7. The frit of claim 1, wherein the TeO2 is present in an amount in the range from about 0.1% by weight to about 10% by weight. 8. The frit of claim 7 further comprising at least one first oxide component selected from one or more of ZnO in an amount in the range from about 0% by weight to about 15% by weight; and Al2O3 in an amount in the range from about 0% by weight to about 3% by weight. 9. The frit of claim 7 or 8, further comprising at least one second oxide component selected from one or more of Ag2O in an amount in the range from about 0% by weight to about 8% by weight; Sb2O3 in an amount in the range from about 0% by weight to about 5% by weight; GeO2 in an amount in the range from about 0% by weight to about 10% by weight; In2O3 in an amount in the range from about 0% by weight to about 5% by weight; P2O5 in an amount in the range from about 0% by weight to about 8% by weight; V2O5 in an amount in the range from about 0% by weight to about 8% by weight; Nb2O5 in an amount in the range from about 0% by weight to about 8% by weight; and Ta2O5 in an amount in the range from about 0% by weight to about 8% by weight. 10. A conductive ink comprising a substantially lead-free frit according to claim 1, a liquid vehicle, and a conductive species. 11. The ink of claim 10, wherein the frit further comprises at least one first oxide component selected from one or more of ZnO and Al2O3. 12. The ink of claim 10, wherein the frit further comprises at least one second oxide component selected from one or more of Ag2O, Sb2O3, GeO2, In2O3, P2O5, V2O5, Nb2O5, and Ta2O5. 13. The ink of claim 10, wherein the frit has about 0% added alkali metal oxide component selected from one or more of Na2O, Li2O, and K2O. 14. The ink of claim 10, wherein the frit further comprises at least one alkaline earth metal oxide component selected from one or more of BaO, CaO, MgO and SrO. 15. The ink of claim 10, wherein the TeO2 is present in the frit in an amount in the range from about 0.1% by weight to about 10% by weight. 16. The ink of claim 10, wherein the frit is present in amount in the range from about 1% by weight to about 5% by weight. 17. The ink of claim 10, further comprising one or more of bismuth tellurate and bismuth silicate, titania, zirconia, phosphorous compounds, and combinations thereof. 18. An article comprising a substrate, and the conductive ink of claim 10 disposed on the substrate. 19. The article of claim 18, wherein the substrate comprises a semiconductor. 20. The article of claim 19, wherein an anti-reflective layer is disposed directly on the substrate and the conductive ink disposed on the anti-reflective layer. 21. The article of claim 20, wherein the anti-reflective layer further comprises TiO2 and Si3N4.
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