Semiconductor substrates having useful and transfer layers
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/01
H01L-021/44
출원번호
UP-0139599
(2008-06-16)
등록번호
US-7741678
(2010-07-12)
우선권정보
FR-00 15280(2000-11-27)
발명자
/ 주소
Ghyselen, Bruno
Letertre, Fabrice
출원인 / 주소
S.O.I.Tec Silicon on Insulator Technologies
대리인 / 주소
Winston & Strawn LLP
인용정보
피인용 횟수 :
12인용 특허 :
15
초록▼
A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that
A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
대표청구항▼
What is claimed is: 1. A semiconductor substrate comprising a monocrystalline useful layer, a support, a thin layer located between and in contact with each of the monocrystalline useful layer and the support, wherein the thin layer and the monocrystalline useful layer each have a thickness that is
What is claimed is: 1. A semiconductor substrate comprising a monocrystalline useful layer, a support, a thin layer located between and in contact with each of the monocrystalline useful layer and the support, wherein the thin layer and the monocrystalline useful layer each have a thickness that is relatively thin compared to the relatively thick layer of the support, and wherein the support is made of a material that is grown or deposited on the thin layer, wherein the grown or deposited material has a lower crystalline quality than that of the monocrystalline useful layer, and wherein the monocrystalline useful layer is made of compounds of at least two elements including at least one element of aluminum, indium, or gallium. 2. The substrate of claim 1, wherein the monocrystalline useful layer comprises at least one of gallium nitride or aluminum nitride. 3. The substrate of claim 1, wherein the support material is at least one of a monocrystalline material, a polycrystalline material, an amorphous material, or a material comprising a plurality of phases. 4. The substrate of claim 1, wherein the support material is made of at least one of silicon, silicon carbide, sapphire, diamond, graphite, gallium nitride, aluminum nitride, or a combination of at least two of these materials. 5. The substrate of claim 1, wherein the thin layer is transferred from a source substrate. 6. The substrate of claim 1, wherein the support material has lower insulative or conductive qualities compared to those of the useful layer. 7. A semiconductor substrate comprising a monocrystalline useful layer, a support, a thin layer located between and in contact with each of the monocrystalline useful layer and the support, wherein the thin layer and the monocrystalline useful layer each have a thickness that is relatively thin compared to the relatively thick layer of the support, and wherein the support is made of a material that is grown or deposited on the thin layer, wherein the grown or deposited material has a lower crystalline quality than that of the monocrystalline useful layer, and wherein the thin layer is at least one of silicon, silicon carbide, a monocrystalline material, sapphire, diamond, gallium nitride, aluminum nitride, or a combination of at least two of these materials. 8. The substrate of claim 7, wherein the useful layer is made of a material having a wide band gap. 9. The substrate of claim 7, wherein the support material is at least one of a monocrystalline material, a polycrystalline material, an amorphous material, or a material comprising a plurality of phases. 10. A semiconductor substrate comprising a monocrystalline useful layer, a support, a thin layer located between and in contact with each of the monocrystalline useful layer and the support, wherein the thin layer and the monocrystalline useful layer each have a thickness that is relatively thin compared to the relatively thick layer of the support, and wherein the support is made of a material that is grown or deposited on the thin layer, wherein the grown or deposited material has a lower crystalline quality than that of the monocrystalline useful layer, wherein the support material is made of at least one of silicon, silicon carbide, sapphire, diamond, graphite, gallium nitride, aluminum nitride, or a combination of at least two of these materials. 11. The substrate of claim 10, wherein the monocrystalline useful layer is SiC, the thin layer is monocrystalline SiC, the support material is polycrystalline SiC, polycrystalline AlN, diamond or a monocrystalline SiC of lower crystalline quality compared to that of the useful layer. 12. The substrate of claim 10, wherein the monocrystalline useful layer is monocrystalline GaN, the thin layer is monocrystalline SiC, sapphire or silicon, and the support material is polycrystalline SiC, polycrystalline GaN, polycrystalline AlN, diamond or a monocrystalline SiC of lower crystalline quality compared to that of the monocrystalline useful layer. 13. The substrate of claim 10, wherein the monocrystalline useful layer is monocrystalline Si(1,1,1,), the thin layer is monocrystalline Si or monocrystalline SiC, the support material is polycrystalline Si or monocrystalline Si of lower crystalline quality compared to that of the monocrystalline useful layer. 14. A semiconductor substrate comprising a monocrystalline useful layer, a support, a thin layer located between and in contact with each of the monocrystalline useful layer and the support, wherein the thin layer and the monocrystalline useful layer each have a thickness that is relatively thin compared to the relatively thick layer of the support, and wherein the support is made of a material that is grown or deposited on the thin layer, wherein the grown or deposited material has a lower crystalline quality than that of the monocrystalline useful layer, and wherein the support is an epitaxially or quasi-epitaxially material that is grown on the thin layer. 15. The substrate of claim 14, wherein the support material has lower insulative or conductive qualities compared to those of the monocrystalline useful layer. 16. The substrate of claim 14, wherein the monocrystalline useful layer is made of a material having a wide band gap. 17. The substrate of claim 14, wherein the support material is at least one of a monocrystalline material, a polycrystalline material, an amorphous material, or a material comprising a plurality of phases. 18. The substrate of claim 14, wherein the support is made of a material that is grown or deposited on the thin layer, wherein the grown or deposited material has a lower crystalline quality than that of the monocrystalline useful layer, wherein the support material is made of at least one of silicon, silicon carbide, sapphire, diamond, graphite, gallium nitride, aluminum nitride, or a combination of at least two of these materials. 19. The substrate of claim 14, wherein the useful monocrystalline layer is made of compounds of at least two elements including at least one element of aluminum, indium, or gallium. 20. The substrate of claim 14, wherein: (A) the monocrystalline useful layer is SiC, the thin layer is monocrystalline SiC, the support material is polycrystalline SiC, polycrystalline AlN, diamond or a monocrystalline SiC of lower crystalline quality compared to that of the monocrystalline useful layer; or (B) the monocrystalline useful layer is monocrystalline GaN, the thin layer is monocrystalline SiC, sapphire or silicon, and the support material is polycrystalline SiC, polycrystalline GaN, polycrystalline AlN, diamond or a monocrystalline SiC of lower crystalline quality compared to that of the monocrystalline useful layer; or (C) the monocrystalline useful layer is monocrystalline Si(1,1,1,), the thin layer is monocrystalline Si or monocrystalline SiC, the support material is polycrystalline Si or monocrystalline Si of lower crystalline quality compared to that of the monocrystalline useful layer.
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