A method of depositing organic material is provided. A carrier gas carrying an organic material is ejected from a nozzle at a flow velocity that is at least 10% of the thermal velocity of the carrier gas, such that the organic material is deposited onto a substrate. In some embodiments, the dynamic
A method of depositing organic material is provided. A carrier gas carrying an organic material is ejected from a nozzle at a flow velocity that is at least 10% of the thermal velocity of the carrier gas, such that the organic material is deposited onto a substrate. In some embodiments, the dynamic pressure in a region between the nozzle and the substrate surrounding the carrier gas is at least 1 Torr, and more preferably 10 Torr, during the ejection. In some embodiments, a guard flow is provided around the carrier gas. In some embodiments, the background pressure is at least about 10e-3 Torr, more preferably about 0.1 Torr, more preferably about 1 Torr, more preferably about 10 Torr, more preferably about 100 Torr, and most preferably about 760 Torr. A device is also provided. The device includes a nozzle, which further includes a nozzle tube having a first exhaust aperture and a first gas inlet; and a jacket surrounding the nozzle tube, the jacket having a second exhaust aperture and a second gas inlet. The second exhaust aperture completely surrounds the first tube aperture. A carrier gas source and an organic source vessel may be connected to the first gas inlet. A guard flow gas source may be connected to the second gas inlet. The device may include an array of such nozzles.
대표청구항▼
What is claimed is: 1. A method of depositing a patterned layer of an organic material on a surface of a substrate, comprising: mixing vapor of an organic material for deposition with a carrier gas; introducing the carrier gas carrying the organic material for deposition into a nozzle; ejecting the
What is claimed is: 1. A method of depositing a patterned layer of an organic material on a surface of a substrate, comprising: mixing vapor of an organic material for deposition with a carrier gas; introducing the carrier gas carrying the organic material for deposition into a nozzle; ejecting the carrier gas carrying the organic material from the nozzle at a flow velocity that is at least 10% of the thermal velocity of the carrier gas, such that the organic material introduced with the carrier gas into the nozzle is deposited onto a substrate, separated from the nozzle, forming the layer of the organic material on the surface of the substrate, the layer comprising a plurality of separate films; and based upon the molecular mass of the carrier gas, the molecular mass of the organic material, the mean free path of the ejected material, or a combination thereof, selecting a separation s between the nozzle and the substrate and a downstream pressure PL sufficient to create a dynamic pressure surrounding the carrier gas in a region between the nozzle and the substrate of at least 1 Torr. 2. The method of claim 1, wherein the dynamic pressure is at least 10 Torr. 3. The method of claim 2, wherein a background pressure of at least 5 Torr is provided. 4. The method of claim 2, further comprising: providing a guard flow surrounding the ejected material. 5. The method of claim 2, wherein the dynamic pressure of at least 10 Torr is affected by a guard flow surrounding the ejected material. 6. The method of claim 5, wherein the method is performed in a vacuum chamber at base pressure, thereby providing a background pressure of less than about 0.1 Torr. 7. The method of claim 6, wherein the molecular weight of the organic material is greater than the molecular weight of the carrier gas. 8. The method of claim 5, wherein the guard flow comprises a first gas, the carrier gas comprises a second gas, and the molecular weight of the first gas is greater than the molecular weight of the second gas. 9. The method of claim 1, wherein a background pressure of about 760 Torr is provided, and the background pressure is the ambient atmosphere. 10. The method of claim 1, wherein the dynamic pressure is at least about 760 Torr. 11. The method of claim 1, wherein a background pressure of at least about 10−3 Torr is provided. 12. The method of claim 1, wherein the background pressure is at least 0.1 Torr. 13. The method of claim 12, wherein the background pressure is at least 1 Torr. 14. The method of claim 13, wherein the background pressure is at least 10 Torr. 15. The method of claim 14, wherein the background pressure is at least about 760 Torr. 16. The method of claim 15, wherein the background pressure of at least about 760 Torr is provided by a glove box without the use of a vacuum apparatus. 17. The method of claim 11, wherein the background pressure is achieved without the use of vacuum apparatus. 18. The method of claim 1, wherein the dynamic pressure is not greater than about 2 times the background pressure. 19. The method of claim 1, wherein the dynamic pressure is not greater than about 10 times the background pressure. 20. The method of claim 1, wherein the plurality of separate films comprises a plurality of pixels. 21. The method of claim 1, wherein at least one of the nozzle diameter, the nozzle length, and nozzle-to-substrate separation is about equal to the gas mean free path length. 22. The method of claim 1, wherein the dynamic pressure is at least 0.5 Torr greater than the background pressure. 23. A method of depositing a patterned layer of an organic material on a surface of a substrate, comprising: mixing vapor of an organic material for deposition with a carrier gas; introducing the carrier gas carrying the organic material for deposition into a nozzle; ejecting the carrier gas carrying the organic material from the nozzle at a flow velocity that is at least 10% of the thermal velocity of the carrier gas, such that the organic material introduced with the carrier gas into the nozzle is deposited onto a substrate, separated from the nozzle, to form the patterned layer of organic material, the layer comprising a plurality of separate films on the surface of the substrate; and providing a guard flow around the carrier gas. 24. The method of claim 23, wherein the method is performed with a background pressure of at least about 760 Torr. 25. The method of claim 23, wherein the method is performed in a glove-box without the use of a vacuum apparatus. 26. The method of claim 23, wherein the plurality of separate films comprises a plurality of pixels. 27. The method of claim 23, wherein at least one of the nozzle diameter, the nozzle length, and nozzle-to-substrate separation is about equal to the gas mean free path length.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (18)
Moskowitz Larry N. (Naperville IL) Lindley Donald J. (Naperville IL), Apparatus and process for producing high density thermal spray coatings.
Schmitt Jerome J. (265 College St. (12N) New Haven CT 06510), Method and apparatus for the deposition of solid films of a material from a jet stream entraining the gaseous phase of s.
Bickford Harry Randall ; Duke Peter J. ; Foster Elizabeth ; Goldberg Martin ; Markovich Voya Rista ; Matthew Linda ; McBride Donald G. ; O'Toole Terrence Robert ; Tisdale Stephen Leo ; Viehbeck Alfre, Method for conditioning halogenated polymeric materials and structures fabricated therewith.
Burrows Paul E. ; Forrest Stephen R. ; Bulovic Vladimir ; Tian Peifang ; Brown Julie, Method for patterning light emitting devices incorporating a movable mask.
Forrest Stephen Ross ; Thompson Mark Edward ; Burrows Paul Edward ; Sapochak Linda Susan ; McCarty Dennis Matthew, Multicolor organic light emitting devices.
Quinn, William E.; McGraw, Gregory; Harikrishna Mohan, Siddharth; King, Matthew; Hartford, Jr., Elliot H., Micro-nozzle and micro-nozzle array for OVJP and method of manufacturing the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.