초록 ▼

Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition

Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition. The multilayer NEG structures exhibit better gas sorbing characteristics and lower activation temperature lower than those of deposits made up of a single material. A process for manufacturing such structures includes depositing a first, high surface area NEG film on a support, and then depositing a thin over layer of low activation NEG film.

대표청구항 ▼

We claim: 1. A microelectromechanical device comprising a multilayer non-evaporable getter structure, wherein the getter structure comprises: a first layer comprising a non-evaporable getter material having a surface area equivalent to at least 20 times its geometrical area, and a second layer dire

We claim: 1. A microelectromechanical device comprising a multilayer non-evaporable getter structure, wherein the getter structure comprises: a first layer comprising a non-evaporable getter material having a surface area equivalent to at least 20 times its geometrical area, and a second layer directly contacting the first layer, the second layer having a thickness not greater than 1 μm and comprising a non-evaporable getter alloy having a low activation temperature. 2. The device of claim 1, wherein the second layer fully covers the first layer. 3. The device of claim 1, wherein the getter material of the first layer comprises a component selected from the group consisting of zirconium, titanium, niobium, tantalum, vanadium, hafnium, and Zr—Co—A alloys, wherein A represents one or more elements selected from the group consisting of yttrium, lanthanum and the other rare earth elements. 4. The device of claim 1, wherein A comprises lanthanum. 5. The device of claim 1, wherein the thickness of the first layer ranges from about 0.2 μm to about 50 μm. 6. The device of claim 1, wherein the thickness of the first layer ranges from about 10 μm to about 20 μm. 7. The device of claim 1, wherein the surface area of the first layer is equivalent to at least about 50 times its geometrical area. 8. The device of claim 1, wherein the getter alloy of the second layer comprises Zr and V. 9. The device of claim 8, wherein the getter alloy of the second layer further comprises Fe, Ni, Mn, or Al. 10. The device of claim 9, wherein the getter alloy of the second layer comprises about 70% Zr, about 24.6% V, and about 5.4% Fe by weight. 11. The device of claim 1, wherein the getter alloy of the second layer comprises about 80% Zr, about 15% Co, and about 5% A by weight, wherein A comprises an element selected from the group consisting of yttrium, lanthanum and the other rare earth elements; and the composition of the second layer is different than the composition of the first layer. 12. The device of claim 11, wherein A comprises lanthanum. 13. The device of claim 11, wherein the first layer is not a Zr—Co—A alloy. 14. The device of claim 8, wherein the getter alloy of the second layer is a Zr—Ti—V alloy. 15. The device of claim 14, wherein the second layer comprises about 44% Zr, about 23% Ti, and about 33% V. 16. The device of claim 8, wherein the getter alloy of the second layer is ZrV2. 17. The device of claim 1, wherein the thickness of the second layer ranges from about 50 nm to about 500 nm. 18. The device of claim 1 further including a deposit comprising palladium on a surface of the second layer, wherein the second layer is between the first layer and the deposit. 19. The device of claim 18, wherein the deposit is a continuous layer. 20. The device of claim 18, wherein the deposit is a discontinuous layer. 21. The device of claim 18, wherein the deposit comprises a component selected from the group consisting of palladium oxide, a silver-palladium alloy, and a palladium compound comprising a metal species found in the second layer. 22. The device of claim 18, wherein the deposit comprises a silver-palladium alloy having up to about 30 mole % of silver. 23. The device of claim 20, wherein the discontinuous layer covers from about 10% to about 90% of the surface of the second layer. 24. The device of claim 18, wherein the deposit has a thickness ranging from about 10 nm to about 100 nm. 25. The device of claim 1, wherein the non-evaporable getter alloy having a low activation temperature is activated to at least about 90% activation when using a treatment time of about 1 hour and a treatment temperature of about 300° C. 26. A microelectromechanical device comprising a getter structure, wherein the getter structure comprises: a support; a first layer disposed on a surface of the support and having a high surface area, wherein the first layer comprises a first non-evaporable getter; and a second layer disposed on a surface of the first layer, wherein the second layer comprises a second non-evaporable getter alloy having a low activation temperature, and the surface of the first layer is between the support and the second layer. 27. The device of claim 26, wherein the support comprises an inner surface of the microelectromechanical device. 28. The device of claim 26, wherein the getter material of the first layer comprises a component selected from the group consisting of zirconium, titanium, niobium, tantalum, vanadium, hafnium, and Zr—Co—A alloys, wherein A represents one or more elements selected from the group consisting of yttrium, lanthanum and the other rare earth elements. 29. The device of claim 28, wherein A comprises lanthanum. 30. The device of claim 26, wherein the first layer and the second layer are cathodically deposited films.