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There is provided a semiconductor bridge device wherein a reaction time for generating sparks is short and a spark generating amount is large. This semiconductor bridge device comprises a substrate, a pair of land portions, a bridge portion electrically connecting between the pair of the land portio

There is provided a semiconductor bridge device wherein a reaction time for generating sparks is short and a spark generating amount is large. This semiconductor bridge device comprises a substrate, a pair of land portions, a bridge portion electrically connecting between the pair of the land portions, and an electrode pad arranged on each upper surface in the pair of the land portions and emitting sparks at the bridge portion through an electric current passed between the electrode pads, in which the pair of the land portions and the bridge portion consist of a laminate formed by alternately laminating a metal layer and a metal oxide layer plural times, and an outermost layer in the laminate is a metal layer, and a metal oxide having a decomposition temperature of higher than 1500° C. is used in the metal oxide layer.

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The invention claimed is: 1. A semiconductor bridge device comprising a substrate, a pair of land portions, a bridge portion electrically connecting between the pair of the land portions, and an electrode pad arranged on each upper surface in the pair of the land portions and emitting sparks at the

The invention claimed is: 1. A semiconductor bridge device comprising a substrate, a pair of land portions, a bridge portion electrically connecting between the pair of the land portions, and an electrode pad arranged on each upper surface in the pair of the land portions and emitting sparks at the bridge portion through an electric current passed between the electrode pads, in which the pair of the land portions and the bridge portion consist of a laminate formed by alternately laminating a metal layer and a metal oxide layer plural times, and an outermost layer in the laminate is a metal layer, and a metal oxide having a decomposition temperature of higher than 1500° C. is used in the metal oxide layer. 2. A semiconductor bridge device according to claim 1, wherein the metal oxide having a decomposition temperature of higher than 1500° C. is SiO2 or TiO2, and a metal constituting the metal layer is Ti or Zr. 3. A semiconductor bridge device according to claim 2, wherein the metal oxide having a decomposition temperature of higher than 1500° C. is SiO2, and the metal constituting the metal layer is Ti. 4. A semiconductor bridge device according to claim 1, wherein each of the metal layer and the metal oxide layer in the laminate has a thickness of 0.02-3 microns. 5. A semiconductor bridge device according to claim 1, wherein the laminate has an overall thickness of 0.1-10 microns. 6. A semiconductor bridge device according to claim 1, wherein the metal layer as the outermost layer in the laminate has a thickness of 0.5-3 microns. 7. A semiconductor bridge device according to claim 1, wherein the metal oxide layer is existent at a lowest position of the laminate and has a thickness of 0.5-3 microns. 8. A semiconductor bridge device according to claim 1, wherein the bridge portion has a value of resistance of 0.5-10Ω. 9. A semiconductor bridge device according to claim 1, wherein the bridge portion is provided on its upper face with a protection film. 10. An igniter comprising a cup body, a plug holding a plurality of electrode pins at an insulated state and sealing an opening portion of the cup body, a primary charge filled in an inside of the cup body, and a heating element connected to the electrode pins to ignite through the application of an electric current from an exterior and disposed in contact with the primary charge, in which a semiconductor bridge device as claimed in any one of claims 1 to 9 is used as the heating element.