Method for manufacturing semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-021/84
출원번호
UP-0808035
(2007-06-06)
등록번호
US-7749819
(2010-07-26)
우선권정보
JP-6-51237(1994-02-23)
발명자
/ 주소
Ohtani, Hisashi
Miyanaga, Akiharu
Zhang, Hongyong
Yamaguchi, Naoaki
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Nixon Peabody LLP
인용정보
피인용 횟수 :
0인용 특허 :
52
초록▼
It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor. A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on gl
It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor. A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained.
대표청구항▼
What is claimed is: 1. A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising an amorphous silicon over a substrate; forming a silicon oxide film on the semiconductor film; disposing a solution containing a metal being capable of promoting
What is claimed is: 1. A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising an amorphous silicon over a substrate; forming a silicon oxide film on the semiconductor film; disposing a solution containing a metal being capable of promoting crystallization of the semiconductor film; forming a silicon nitride film over the silicon oxide film; and heating the semiconductor film and the metal to crystallize the semiconductor film. 2. A method according to claim 1, wherein the silicon nitride film comprises at least one of hydrogen and oxygen. 3. A method according to claim 1, wherein the silicon nitride is formed by a plasma CVD system or an LPCVD system. 4. A method according to claim 1, wherein the metal is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorous, arsenic and antimony. 5. A method according to claim 1, wherein the silicon nitride film is in contact with the semiconductor film. 6. A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising an amorphous silicon over a substrate; forming a silicon oxide film on the semiconductor film; disposing a solution containing a metal being capable of promoting crystallization of the semiconductor film; forming a silicon nitride film over the silicon oxide film; heating the semiconductor film and the metal to crystallize the semiconductor film; and irradiating the semiconductor film with a laser beam. 7. A method according to claim 6, wherein the silicon nitride film comprises at least one of hydrogen and oxygen. 8. A method according to claim 6, wherein the silicon nitride is formed by a plasma CVD system or an LPCVD system. 9. A method according to claim 6, wherein the metal is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorous, arsenic and antimony. 10. A method according to claim 6, wherein the silicon nitride film is in contact with the semiconductor film. 11. A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising an amorphous silicon over a substrate; forming a silicon oxide film on the semiconductor film; disposing a solution containing a metal being capable of promoting crystallization of the semiconductor film; forming a silicon nitride film over the silicon oxide film; heating the semiconductor film and the metal to crystallize the semiconductor film; irradiating the semiconductor film with a laser beam; and removing the silicon nitride film. 12. A method according to claim 11, wherein the silicon nitride film comprises at least one of hydrogen and oxygen. 13. A method according to claim 11, wherein the silicon nitride is formed by a plasma CVD system or an LPCVD system. 14. A method according to claim 11, wherein the metal is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorous, arsenic and antimony. 15. A method according to claim 11, wherein the silicon nitride film is in contact with the semiconductor film. 16. A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising an amorphous silicon over a substrate; forming a silicon oxide film on the semiconductor film; disposing a solution containing a metal being capable of promoting crystallization of the semiconductor film; forming a silicon nitride film over the silicon oxide film; and heating the semiconductor film, the metal and the silicon nitride film to crystallize the semiconductor film. 17. A method according to claim 16, wherein the silicon nitride film comprises at least one of hydrogen and oxygen. 18. A method according to claim 16, wherein the silicon nitride is formed by a plasma CVD system or an LPCVD system. 19. A method according to claim 16, wherein the metal is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorous, arsenic and antimony. 20. A method according to claim 16, wherein the silicon nitride film is in contact with the semiconductor film.
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