초록 ▼

Electronically tunable and reconfigurable hyperspectral IR detectors and methods for making the same are presented. In one embodiment, a reconfigurable hyperspectral sensor (or detector) detects radiation from about 0.4 μm to about 2 μm and beyond. This sensor is configured to be compact

Electronically tunable and reconfigurable hyperspectral IR detectors and methods for making the same are presented. In one embodiment, a reconfigurable hyperspectral sensor (or detector) detects radiation from about 0.4 μm to about 2 μm and beyond. This sensor is configured to be compact, and lightweight and offers hyperspectral imaging capability while providing wavelength agility and tunability at the chip-level. That is, the sensor is used to rapidly image across diverse terrain to identify man-made objects and other anomalies in cluttered environments.

대표청구항 ▼

What is claimed is: 1. A photon detector comprising: a semiconductor graded absorber layer adapted to photo-generate charge carriers, the graded absorber layer having a composition grade; a semiconductor collector layer adapted to collect the photo-generated charge carriers; and a semiconductor sel

What is claimed is: 1. A photon detector comprising: a semiconductor graded absorber layer adapted to photo-generate charge carriers, the graded absorber layer having a composition grade; a semiconductor collector layer adapted to collect the photo-generated charge carriers; and a semiconductor selector layer adapted to selectively deplete the absorber layer, the selector layer having a same doping type as the collector layer and an opposite doping type as the absorber layer, wherein the composition grade of the absorber layer is away from the selector layer such that a narrower band gap absorber material is closer to the collector layer and a wider band gap absorber material is closer to the selector layer, wherein the electromagnetic radiation to be detected enters the absorber layer through the selector layer, wherein a p/n junction composed of the selector layer and the absorber layer is configured to change the spectral response of the detector in accordance with the magnitude of a reverse bias applied to the p/n junction, wherein the graded absorber layer is interposed between the collector layer and the selector layer, wherein the graded absorber layer contacts the collector layer and the selector layer, and wherein independent electrical contacts are made to the selector layer, the absorber layer and the collector layer. 2. The photon detector of claim 1, wherein the selector layer is formed on a substrate, and wherein the substrate is removed to extend a detection range of the photon detector to detect shorter wavelength electromagnetic radiation that can include the visible light. 3. The photon detector of claim 1, wherein the selector layer is formed on a substrate, and wherein the substrate includes a buffer layer. 4. The photon detector of claim 3, wherein the substrate including the buffer layer is removed to extend a detection range of the photon detector to detect shorter wavelength electromagnetic radiation that can include the visible light. 5. The photon detector of claim 1, wherein a part of the graded absorber layer is comprised substantially of In0.525Ga1-xAlxAs, and wherein x ranges from 0 to 0.475. 6. The photon detector of claim 1, wherein a part of the graded absorber layer is comprised substantially of AlxGa1-xAsySb1-y, has a band gap of ˜2 eV, is lattice matched to InP, and wherein x is about 0.75 and y is about 0.55. 7. The photon detector of claim 1, wherein a part of the graded absorber layer is comprised substantially of an alloy of InGaAs that is lattice matched to InP. 8. The photon detector of claim 1, wherein a part of the graded absorber layer is comprised substantially of InxAl1-xAsySb1-y, and has a band gap of ˜1.8 eV, is lattice matched to InP, and wherein x is about 0.31 and y is about 0.82. 9. The photon detector of claim 1, wherein a part of the graded absorber layer is comprised substantially of InxAl1-xAs, and wherein x is about 0.52. 10. The photon detector of claim 1, wherein a first part of the graded absorber layer is comprised substantially of In0.525Ga1-xAxAs and x ranges from 0 to 0.475, wherein a second part of the graded absorber layer is comprised substantially of IneAl1-eAs and e is about 0.52, wherein a third part of the graded absorber layer is comprised substantially of IncAl1-cAsdSbd-1 wherein and c is about 0.31, d is about 0.82, and wherein a fourth part of the graded absorber layer is comprised substantially of AlaGa1-aAsbSbb-1, and a is about 0.75, b is about 0.55. 11. The photon detector of claim 1, wherein a part of the graded absorber layer is comprised substantially of an alloy of Hg1-xCdxTe, and wherein x ranges from 0.18 to 1.0. 12. The photon detector of claim 1, wherein a part of the graded absorber layer is comprised substantially of GaN. 13. The photon detector of claim 1, wherein a part of the graded absorber layer is comprised of at least one element alloyed with GaN and selected from the group consisting of In, Al and As. 14. The photon detector of claim 1, wherein a part of the graded absorber layer is comprised substantially of GaN and at least one element alloyed with GaN and selected from the group consisting of In, Al and As. 15. The photon detector of claim 1, wherein the detector comprises an array of detector elements that are combined to form a focal plane array.