To achieve high performance of a semiconductor integrated circuit depending on not only a microfabrication technique but also another way. In addition, to achieve low power consumption of a semiconductor integrated circuit. A semiconductor device is provided in which crystal faces and/or crystal axe
To achieve high performance of a semiconductor integrated circuit depending on not only a microfabrication technique but also another way. In addition, to achieve low power consumption of a semiconductor integrated circuit. A semiconductor device is provided in which crystal faces and/or crystal axes of single-crystalline semiconductor layers of a first conductive MISFET and a second conductive MISFET are different. The crystal faces and/or crystal axes are arranged so that mobility of carriers flowing in channel length directions in the respective MISFETs is increased. Such a structure can increase mobility of carriers flowing through channels of the MISFETs and high speed operation of a semiconductor integrated circuit can be achieved. Further, low voltage driving becomes possible, and low power consumption can be realized.
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What is claimed is: 1. A semiconductor device comprising: at least a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer provided over the same surface of an insulating substrate, wherein the first single-crystalline semiconductor layer includes an n-typ
What is claimed is: 1. A semiconductor device comprising: at least a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer provided over the same surface of an insulating substrate, wherein the first single-crystalline semiconductor layer includes an n-type impurity region, and the second single-crystalline semiconductor layer includes a p-type impurity region, wherein a crystal face of the first single-crystalline semiconductor layer is {100} and a crystal face of the second single-crystalline semiconductor layer is {110}, and a channel length direction of the first single-crystalline semiconductor layer is directed in <100> direction, and a channel length direction of the second single-crystalline semiconductor layer is directed in <110> direction. 2. A semiconductor device comprising: at least a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer provided over the same surface of an insulating substrate, wherein the first single-crystalline semiconductor layer includes an n-type impurity region, and the second single-crystalline semiconductor layer includes a p-type impurity region, wherein a crystal face of the first single-crystalline semiconductor layer and a crystal face of the second single-crystalline semiconductor layer are {110}, and wherein a crystal axis in a channel length direction of the first single-crystalline semiconductor layer is directed in <100> direction, and a crystal axis in a channel length direction of the second single-crystalline semiconductor layer is directed in <110> direction. 3. A semiconductor display device comprising: at least a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer provided over the same surface of an insulating substrate, wherein the first single-crystalline semiconductor layer includes an n-type impurity region, and the second single-crystalline semiconductor layer includes a p-type impurity region, wherein a crystal face of the first single-crystalline semiconductor layer and a crystal face of the second single-crystalline semiconductor layer are different, and wherein the insulating substrate has a light-transmitting property. 4. The semiconductor display device according to claim 3, wherein the crystal face of the first single-crystalline semiconductor layer is {100}, and the crystal face of the second single-crystalline semiconductor layer is {110}. 5. The semiconductor display device according to claim 3, wherein the crystal face of the first single-crystalline semiconductor layer is {100}, and the crystal face of the second single-crystalline semiconductor layer is {110}, and wherein a channel length direction of the first single-crystalline semiconductor layer is directed in <100> direction, and a channel length direction of the second single-crystalline semiconductor layer is directed in <110> direction. 6. A semiconductor display device comprising: at least a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer provided over the same surface of an insulating substrate, wherein the first single-crystalline semiconductor layer includes an n-type impurity region, and the second single-crystalline semiconductor layer includes a p-type impurity region, wherein a crystal face of the first single-crystalline semiconductor layer and a crystal face of the second single-crystalline semiconductor layer are the same, wherein a crystal axis in a channel length direction of the first single-crystalline semiconductor layer is different from a crystal axis in a channel length direction of the second single-crystalline semiconductor layer, and wherein the insulating substrate has a light-transmitting property. 7. The semiconductor display device according to claim 6, wherein the crystal faces of the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer are {110}, wherein the channel length direction of the first single-crystalline semiconductor layer is directed in <100> direction, and wherein the channel length direction of the second single-crystalline semiconductor layer is directed in <110> direction. 8. A semiconductor device comprising: at least a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer provided over the same surface of an insulating substrate, wherein the first single-crystalline semiconductor layer includes an n-type impurity region, and the second single-crystalline semiconductor layer includes a p-type impurity region, wherein a crystal face of the first single-crystalline semiconductor layer and a crystal face of the second single-crystalline semiconductor layer are different, and wherein the insulating substrate has a light-transmitting property. 9. The semiconductor device according to claim 8, wherein the crystal face of the first single-crystalline semiconductor layer is {100}, and the crystal face of the second single-crystalline semiconductor layer is {110}. 10. The semiconductor device according to claim 8, wherein the crystal face of the first single-crystalline semiconductor layer is {100}, and the crystal face of the second single-crystalline semiconductor layer is {110}, and wherein a channel length direction of the first single-crystalline semiconductor layer is directed in <100> direction, and a channel length direction of the second single-crystalline semiconductor layer is directed in <110> direction. 11. A semiconductor device comprising: at least a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer provided over the same surface of an insulating substrate, wherein the first single-crystalline semiconductor layer includes an n-type impurity region, and the second single-crystalline semiconductor layer includes a p-type impurity region, wherein a crystal face of the first single-crystalline semiconductor layer and a crystal face of the second single-crystalline semiconductor layer are the same, wherein a crystal axis in a channel length direction of the first single-crystalline semiconductor layer is different from a crystal axis in a channel length direction of the second single-crystalline semiconductor layer, and wherein the insulating substrate has a light-transmitting property. 12. The semiconductor device according to claim 11, wherein the crystal faces of the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer are {110}, wherein the channel length direction of the first single-crystalline semiconductor layer is directed in <100> direction, and wherein the channel length direction of the second single-crystalline semiconductor layer is directed in <110> direction.
Yamazaki, Shunpei; Ohnuma, Hideto; Takahashi, Kei, Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device.
Yamazaki, Shunpei; Ohnuma, Hideto; Takahashi, Kei, Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device.
Jheng, Jin-Jang; Yang, Tsun-Neng; Chiang, Chin-Chen, In-situ gettering method for removing metal impurities from the surface and interior of a upgraded metallurgical grade silicon wafer.
Hanaoka, Kazuya; Kimura, Shunsuke, Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate.
Ohnuma, Hideto; Hanaoka, Kazuya, Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of SOI substrate.
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