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Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/80
  • H01L-031/112
출원번호 UP-0073927 (2008-03-12)
등록번호 US-7755113 (2010-08-02)
우선권정보 JP-2007-068086(2007-03-16); JP-2007-133138(2007-05-18)
발명자 / 주소
  • Yamazaki, Shunpei
  • Miyairi, Hidekazu
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson, Eric J.
인용정보 피인용 횟수 : 15  인용 특허 : 16

초록

To achieve high performance of a semiconductor integrated circuit depending on not only a microfabrication technique but also another way. In addition, to achieve low power consumption of a semiconductor integrated circuit. A semiconductor device is provided in which crystal faces and/or crystal axe

대표청구항

What is claimed is: 1. A semiconductor device comprising: at least a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer provided over the same surface of an insulating substrate, wherein the first single-crystalline semiconductor layer includes an n-typ

이 특허에 인용된 특허 (16)

  1. Shunpei Yamazaki JP; Jun Koyama JP; Yoshiharu Hirakata JP; Takeshi Fukunaga JP, Electrooptical device.
  2. Yamazaki, Shunpei; Koyama, Jun; Hirakata, Yoshiharu; Fukunaga, Takeshi, Electrooptical device.
  3. Yamazaki,Shunpei; Koyama,Jun; Hirakata,Yoshiharu; Fukunaga,Takeshi, Electrooptical device.
  4. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of fabricating a high reliable SOI substrate.
  5. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  6. Shunpei Yamazaki JP, Method of manufacturing a semiconductor device.
  7. Takano, Tamae, Method of manufacturing a semiconductor device.
  8. Yamazaki,Shunpei, Method of manufacturing a semiconductor device.
  9. Yamazaki, Shunpei, Nonvolatile memory and electronic apparatus.
  10. Fukunaga Takeshi,JPX, Process for production of SOI substrate and process for production of semiconductor device.
  11. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  12. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  13. Fukunaga,Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  14. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  15. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Semiconductor device having an SOI structure and manufacturing method therefor.
  16. Iwamatsu,Toshiaki; Maeda,Shigenobu, Semiconductor wafer and manufacturing method thereof.

이 특허를 인용한 특허 (15)

  1. Yamazaki, Shunpei; Ohnuma, Hideto; Takahashi, Kei, Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device.
  2. Yamazaki, Shunpei; Ohnuma, Hideto; Takahashi, Kei, Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device.
  3. Jheng, Jin-Jang; Yang, Tsun-Neng; Chiang, Chin-Chen, In-situ gettering method for removing metal impurities from the surface and interior of a upgraded metallurgical grade silicon wafer.
  4. Ohnuma, Hideto; Kakehata, Tetsuya; Shimomura, Akihisa; Sasagawa, Shinya; Kurata, Motomu, Manufacturing method of SOI substrate.
  5. Sekiguchi, Keiichi; Hanaoka, Kazuya; Ito, Daigo, Manufacturing method of SOI substrate.
  6. Marchena, Elton, Method and system for template assisted wafer bonding using pedestals.
  7. Yamazaki, Shunpei; Nishida, Eriko, Method for manufacturing SOI substrate and method for manufacturing semiconductor device.
  8. Yamazaki, Shunpei; Nishida, Eriko; Shimazu, Takashi, Method for manufacturing SOI substrate and semiconductor device.
  9. Akimoto, Kengo, Method for manufacturing a capacitor having a yttrium oxide layer.
  10. Hanaoka, Kazuya; Kimura, Shunsuke, Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate.
  11. Krasulick, Stephen B., Multilevel template assisted wafer bonding.
  12. Ohnuma, Hideto; Hanaoka, Kazuya, Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of SOI substrate.
  13. Lambert, Damien; Spann, John; Krasulick, Stephen, Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal.
  14. Lambert, Damien; Spann, John; Krasulick, Stephen, Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal.
  15. Akimoto, Kengo, Semiconductor device including storage capacitor with yttrium oxide capacitor dielectric.
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