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Flow-formed chamber component having a textured surface 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B21D-022/16
  • B21D-017/02
출원번호 UP-0234012 (2005-09-09)
등록번호 US-7762114 (2010-08-13)
발명자 / 주소
  • Abney, Stephen
  • Vesci, Anthony
  • Sommers, Joseph F.
  • Schweitzer, Marc O'Donnell
  • Dickerson, Scott
  • Tiller, Jennifer Watia
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Janah & Associates, P.C.
인용정보 피인용 횟수 : 5  인용 특허 : 226

초록

A method of fabricating a component for a substrate processing chamber involves providing a preform having internal and external surfaces, and providing a mandrel having a textured surface with a pattern of textured features comprising protrusions and depressions. The internal surface of the preform

대표청구항

What is claimed is: 1. A method of fabricating a shield for a substrate processing chamber, the method comprising: (a) providing a preform having a cylindrical sidewall with internal and external surfaces; (b) providing a mandrel with a textured surface having a pattern of textured features compris

이 특허에 인용된 특허 (226)

  1. Chung, Chen-Fang, Alignment mark shielding ring without arcing defect and method for using.
  2. Neidiffer Fred (P.O. Box 2497 Capistrano Beach CA 92624) Fox Charles E. (Rte. #1 ; Box 87 Durant IA 52747) Fox Patsy E. (Rte. #1 ; Box 87 Durant IA 52747), Aluminium cleaning composition and process.
  3. Levinstein Hyman J. (Berkeley Heights NJ) Vratny Frederick (Berkeley Heights NJ), Apparatus and method for plasma-assisted etching of wafers.
  4. Mankins William L. (Huntington WV), Apparatus and method for processing powder metallurgy tubing.
  5. Yu Chih Huang TW; Cherng Chang Tsuei TW; I Chang Wu TW, Apparatus and method for reducing particle contamination in an etcher.
  6. Kao, Chung-En; Lai, Min-Te, Apparatus and method for self-aligning a cover ring in a sputter chamber.
  7. Griffin Stephen E. (2108 E. Solano Dr. Phoenix AZ 85016), Apparatus for making linearly tapered bores in quartz tubing with a controlled laser.
  8. Fukushima Toshihiko (Shimoinayoshi JPX) Fujie Kunio (Tokyo JPX) Arai Akira (Sakuramura JPX) Arai Nobukatsu (Ushikumachi JPX) Kakizaki Kimio (Hitachi JPX), Apparatus for manufacturing heat transfer tubes.
  9. Demaray Richard E. ; Herrera Manuel, Autoclave bonding of sputtering target assembly.
  10. Yamamoto, Tatsushi; Tadera, Takamitsu, Backing plate used for sputtering apparatus and sputtering method.
  11. Shih Hong ; Han Nianci ; Mak Steve S. Y. ; Yin Gerald Zheyao, Boron carbide parts and coatings in a plasma reactor.
  12. Jin Iljoon,CAX ; Fitzsimon John,CAX, Cast aluminum alloy for can stock and process for producing the alloy.
  13. Bourez Allen J. (San Jose CA) Lal Brij Bihari (San Jose CA) Russak Michael A. (Los Gatos CA), Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media.
  14. Wang Hougong ; Ding Peijun, Ceramic coated metallic insulator particularly useful in a plasma sputter reactor.
  15. de Rochemont L. Pierre ; Farmer Peter H., Ceramic composites with improved interfacial properties and methods to make such composites.
  16. Logan Joseph S. (Poughkeepsie) Ruckel Raymond R. (Garrison) Tompkins Robert E. (Pleasant Valley) Westerfield ; Jr. Robert P. (Montgomery NY), Ceramic electrostatic chuck.
  17. Kubota Yoshihiro (Gunma JPX) Kawai Makoto (Gunma JPX) Kojima Shinji (Gunma JPX) Arai Ken-ichi (Gunma JPX), Ceramic-titanium nitride electrostatic chuck.
  18. Lin, Shyh-Nung; Menzie, Mark D.; Sommers, Joe F.; Clawson, Daniel Owen; Mori, Glen T.; Sharp, Lolita L., Chamber components having textured surfaces and method of manufacture.
  19. Lin, Shyh-Nung; Menzie, Mark D.; Sommers, Joe F.; Clawson, Daniel Owen; Mori, Glen T.; Sharp, Lolita L., Chamber having components with textured surfaces and method of manufacture.
  20. Schoepp Alan M. ; Denty ; Jr. William M. ; Barnes Michael, Chamber liner for semiconductor process chambers.
  21. Kim Jung-yup,KRX ; Hong Chang-ki,KRX, Chemical mechanical polishing method using double polishing stop layer.
  22. William Clarke Brooks, Chemical removal of a chromium oxide coating from an article.
  23. Lee Chin Fong,SGX, Clamping ring design to reduce wafer sticking problem in metal deposition.
  24. Wu, Shun; Stow, Clifford; Wang, Hong; Lin, Yixing, Clean aluminum alloy for semiconductor processing equipment.
  25. Brueckner, Karl; Wang, Hong, Cleaning chamber surfaces to recover metal-containing compounds.
  26. Guo Xin S. (Mountain View CA), Cleaning of a PVD chamber containing a collimator.
  27. Schweitzer,Marc O'Donnell; Tiller,Jennifer Watia; West,Brian; Brueckner,Karl, Cleaning of chamber components.
  28. Kumar Ananda H. ; Narendrnath Kadthala R. ; Shamouilian Shamouil, Compliant bond structure for joining ceramic to metal.
  29. Sano Nobuyuki,JPX ; Hasegawa Tsutomu,JPX ; Kosaki Kano,JPX ; Suwa Hidenori,JPX, Components of apparatus for film making and method for manufacturing the same.
  30. Hurwitt Steven ; Reiss Ira, Composite backing plate for a sputtering target.
  31. Boys Donald R. (Cupertino CA), Composite sputtering target structures and process for producing such structures.
  32. Donde Arik ; Maydan Dan ; Steger Robert J. ; Weldon Edwin C. ; Lue Brian ; Dyer Timothy, Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck.
  33. Gilman Paul S. ; Kojima Tetsuya,JPX ; Lo Chi-Fung ; Shimizu Eiichi,JPX ; Tamura Hidemasa,JPX ; Yokoyama Norio,JPX, Contoured sputtering target.
  34. Kaihan A. Ashtiani ; Larry D. Hartsough ; Richard S. Hill ; Karl B. Levy ; Robert M. Martinson, Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target.
  35. Robert Steger ; Chris Chang, Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof.
  36. Flanigan Allen, Deposition shield assembly for a semiconductor wafer processing system.
  37. Watanabe Toshiya (Chigasaki JPX) Kitabayashi Tetsuo (Chigasaki JPX) Nakayama Chiaki (Chigasaki JPX), Dielectric ceramics for electrostatic chucks and method of making them.
  38. Carducci, James D; Noorbakhsh, Hamid; Lee, Evans Y; Pu, Bryan Y; Shan, Hongching; Bjorkman, Claes; Salimian, Siamak; Luscher, Paul E; Welch, Michael D, Dielectric etch chamber with expanded process window.
  39. Zhang Hao, Diffusion bonded sputter target assembly and method of making.
  40. Zhang, Hao; Hart, Jeff; Bolcavage, Ann, Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers.
  41. Bolcavage, Ann; Hart, Jeff, Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers.
  42. Lim Joung-hyun,KRX ; Chae Hee-Sun,KRX, Dry etching apparatus having upper and lower electrodes with grooved insulating rings or grooved chamber sidewalls.
  43. Ding Peijun ; Xu Zheng ; Fu Jianming, Electrically floating shield in a plasma reactor.
  44. Gobbetti Osvaldo (Verona ITX), Electrochemical graining of aluminum or aluminum alloy surfaces.
  45. Okabayashi Norio (Himeji JPX), Electrolytic cleaning method and electrolytic cleaning solution for stamper.
  46. Eckes William A. (Berkeley CA) Rhoades Russell H. (Palo Alto CA) Vorreiter John W. (Sunnyvale CA) Wiesner John C. (Hayward CA) Shepard Charles E. (San Jose CA), Electrostatic cassette.
  47. Kubota Yoshihiro (Gunma JPX) Kawai Makoto (Gunma JPX) Kojima Shinji (Gunma JPX), Electrostatic chuck.
  48. Ooshio Hirosuke (Zama JPX) Watanabe Osamu (Zama JPX), Electrostatic chuck.
  49. Ward Rodney (Crawley GBX) Lewin Ian H. (Forest Row GBX), Electrostatic chuck.
  50. Watanabe Toshiya (Kanagawa JPX) Kitabayashi Tetsuo (Kanagawa JPX), Electrostatic chuck.
  51. Collins Kenneth S. (San Jose CA) Trow John R. (San Jose CA) Tsui Joshua C. W. (Santa Clara CA) Roderick Craig A. (San Jose CA) Bright Nicolas J. (Saratoga CA) Marks Jeffrey (San Jose CA) Ishikawa Tet, Electrostatic chuck for high power plasma processing.
  52. Weldon Edwin C. ; Collins Kenneth S. ; Donde Arik ; Lue Brian ; Maydan Dan ; Steger Robert J. ; Dyer Timothy ; Kumar Ananda H. ; Veytser Alexander M. ; Narendrnath Kadthala R. ; Kats Semyon L. ; Khol, Electrostatic chuck having improved gas conduits.
  53. Logan Joseph S. (Poughkeepsie NY) Ruckel Raymond R. (Garrison NY) Tompkins Robert E. (Pleasant Valley NY) Westerfield ; Jr. Robert P. (Montgomery NY), Electrostatic chuck having tapered electrodes.
  54. Tojo Toru (Yamato JPX) Mori Ichiro (Tokyo JPX) Sano Shunichi (Zama JPX), Electrostatic chuck plate.
  55. Shamouilian Shamouil ; Somekh Sasson ; Levinstein Hyman J. ; Birang Manoocher ; Sherstinsky Semyon ; Cameron John F., Electrostatic chuck with conformal insulator film.
  56. Liporace James W. (Wallkill NY) Seirmarco James A. (Buchanan NY), Electrostatic chuck with diamond coating.
  57. Horwitz Christopher M. (New South Wales AUX), Electrostatic chuck with improved release.
  58. Collins Kenneth S. ; Tsui Joshua Chiu-Wing ; Buchberger Douglas, Electrostatic chuck with polymeric impregnation and method of making.
  59. Drewery, John, Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing.
  60. Jerome Hubacek, Electrostatically clamped edge ring for plasma processing.
  61. Mintz Donald M. ; Subramani Anantha ; Sharp Lolita ; Huo David Datong, Embossed semiconductor fabrication parts.
  62. Laporte Philippe (Echirolles FRX) Peccoud Louise (Claix FRX), Enclosure for the treatment, and particularly for the etching of substrates by the reactive plasma method.
  63. Edward R. Schulak ; J. Benjamin Horvay, Energy transfer system for cold storage facilities.
  64. Lin,Shyh Nung; Menzie,Mark D.; Sun,Nimoal, Evaluation of chamber components having textured coatings.
  65. Yuuki Yasunori,JPX ; Ohira Toshihiko,JPX, Fibers for electric flocking and electrically flocked article.
  66. Park,Nam sin; Jin,Sung hwan; Lee,Hyun ji, Field emission display manufacturing method having integrated getter arrangement.
  67. Han, Oh-Yeon; Kim, Guk-Kwang; Yang, Yun-Sik; Choi, Byeung-Wook, Focus ring and apparatus for processing a semiconductor wafer comprising the same.
  68. Hills Graham W. (Los Gatos CA) Su Yuh-Jia (Cupertino CA) Tanase Yoshiaki (Campbell CA) Ryan Robert E. (Sunnyvale CA), Focus ring for semiconductor wafer processing in a plasma reactor.
  69. Garg Diwakar (2815 Whitemarsh Pl. Macungie PA 18062) Mueller Carl F. (1221 Tatamy Rd. Easton PA 18042) Schaffer Leslie E. (244 W. Chestnut St. Macungie PA 18062) Dyer Paul N. (3920 Pleasant Ave. Alle, Hard outer coatings deposited on titanium or titanium alloys.
  70. Moslehi Mehrdad M. ; Heimanson Dorian ; Davis Cecil J. ; Omstead Thomas R., High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition.
  71. Xiong Wei ; Hoo Hung-Lee ; McDonald Peter, High magnetic flux sputter targets with varied magnetic permeability in selected regions.
  72. Ivanov,Eugene Y.; Smathers,David B.; Wickersham, Jr.,Charles E.; Poole,John E., High purity sputter targets with target end-of-life indication and method of manufacture.
  73. Akiyama Kazuyoshi,JPX ; Yamagami Atsushi,JPX ; Takaki Satoshi,JPX ; Teranishi Koji,JPX, High-frequency introducing means, plasma treatment apparatus, and plasma treatment method.
  74. Perry, Andrew C.; Koenigsmann, Holger J.; Dombrowski, David E.; Hunt, Thomas J., High-purity ferromagnetic sputter targets and method of manufacture.
  75. Tokisue Hiromitsu (Ibaraki JPX) Kitsunai Hiroyuki (Ibaraki JPX) Tsumaki Nobuo (Ushiku JPX) Inouye Hiroshi (Ibaraki JPX), Holder device and semiconductor producing apparatus having same.
  76. Grimard Dennis S. ; Parkhe Vijay ; Levinstein Hyman ; Chen Fusen ; Chafin Michael G., Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported ther.
  77. Mundt Randall S. (Pleasanton CA), Hybrid electrostatic chuck.
  78. Gopalraja Praburam ; Fu Jianming ; Chen Fusen ; Dixit Girish ; Xu Zheng ; Athreya Sankaram ; Wang Wei D. ; Sinha Ashok K., Integrated process for copper via filling.
  79. Demaray Richard E. (Portola Valley CA) Berkstresser David E. (Los Gatos CA) Herrera Manuel J. (San Mateo CA), Integrated sputtering target assembly.
  80. Aragon Steven, Inverted field circular magnetron sputtering device.
  81. Donaldson, Gary A.; Rakowski, Donald W. D.; Selva, Nick G., Ion generation chamber.
  82. Collins Kenneth S. (San Jose CA) Gritters Edward A. (Felton CA), Isolated electrostatic chuck and excitation method.
  83. Treves David ; O'Dell Thomas, Laser disk texturing apparatus.
  84. Banholzer Thomas (San Jose CA) Marohl Dan (San Jose CA) Tepman Avi (Cupertino CA) Mintz Donald M. (Sunnyvale CA), Lid and door for a vacuum chamber and pretreatment therefor.
  85. Banholzer Thomas ; Marohl Dan ; Tepman Avi ; Mintz Donald M., Lid and door for a vacuum chamber and pretreatment therefor.
  86. Ivanov, Eugene Y.; Conard, Harry W., Low temperature sputter target bonding method and target assemblies produced thereby.
  87. Ivanov,Eugene Y., Low temperature sputter target/backing plate method and assembly.
  88. Schertler Roman (Wolfurt ATX) Haag Walter (Grabs CHX) Kohler Peter (Malans CHX), Magnetic field enhanced sputtering arrangement with vacuum treatment apparatus.
  89. Hosokawa Naokichi (Fuchu JPX) Kobayashi Tsukasa (Fuchu JPX), Magnetron sputtering cathode apparatus.
  90. Eggo Sichmann DE; Michael Muecke DE; Wolfgang Becker DE; Klaus Truckenmueller DE, Magnetron sputtering cathode with magnet disposed between two yoke plates.
  91. Eggo Sichmann DE; Michaell Muecke DE, Magnetron sputtering cathode with magnet disposed between two yoke plates.
  92. Onishi, Shinzo, Magnetron sputtering target for magnetic materials.
  93. Or David T. ; Huo David ; Stickler J. Darrel, Magnetron with cooling system for process chamber of processing system.
  94. Yamamoto Toshio (Shiga JPX) Sawada Koji (Shiga JPX), Manufacturing process of shadow mask and shadow mask plate therefor.
  95. Lami Philippe A. (22 Alledu PrBlanc 38240 Meylan FRX), Means for restoring the initial cleanness conditions in a quartz tube used as a reaction chamber for the production of i.
  96. Powell, Earl G., Mesh shield in a sputter reactor.
  97. Merz Martin D. (Richland WA) Knoll Robert W. (Kennewick WA), Metal alloy coatings and methods for applying.
  98. Imai Motomasa (Chofu JPX) Shutoh Naoki (Yokohama JPX) Oh-Ishi Katsuyoshi (Kawasaki JPX) Ueno Fumio (Yokohama JPX) Ohkuma Hideo (Kawasaki JPX) Katsumura Yuji (Kamakura JPX) Kobayashi Masaki (Kawasaki , Metal oxide resistor, power resistor, and power circuit breaker.
  99. Marcus A. Ritland ; William Todd Howe, Metal-infiltrated ceramic seal.
  100. Kogan Igor, Method and apparatus for both mechanically and electrostatically clamping a wafer to a pedestal within a semiconductor.
  101. Miller, Michael Andrew; Ding, Peijun; Tang, Howard; Chiang, Tony; Fu, Jianming, Method and apparatus for depositing a tantalum-containing layer on a substrate.
  102. Ivo J. Raaijmakers ; Robert S. Busacca ; John Lane, Method and apparatus for enhancing a sputtering target's lifetime.
  103. Kohei Toyama JP, Method and apparatus for lapping or polishing semiconductor silicon single crystal wafer.
  104. Katsunori Suzuki JP; Hidetaka Horiuchi JP; Yasushi Kikuchi JP; Jin Yokogawa JP; Ryouichi Kubo JP; Koji Wakabayashi JP, Method and apparatus for processing semiconductor substrates.
  105. Suzuki, Katsunori; Horiuchi, Hidetaka; Kikuchi, Yasushi; Yokogawa, Jin; Kubo, Ryouichi; Wakabayashi, Koji, Method and apparatus for processing semiconductor substrates.
  106. Robertson Robert (Palo Alto CA) Law Kam S. (Union City CA) White John M. (Hayward CA), Method and apparatus for protection of conductive surfaces in a plasma processing reactor.
  107. Roman Mostovoy ; Glen T. Mori, Method and apparatus for reducing target arcing during sputter deposition.
  108. Rose A. Jay (Independence OH) Hamulak Michael A. (Brooklyn OH), Method and apparatus for roll forming metal.
  109. Ravi Kramadhati, Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks.
  110. Binns Robert E. (Roslyn PA), Method for cleaning aluminum at low temperatures.
  111. Collins Kenneth S. (San Jose CA) Buchberger Douglas (Tracy CA), Method for dechucking a workpiece from an electrostatic chuck.
  112. De Marco Franco (Jona CHX), Method for fabricating a dished hollow body possessing a linear or helical inner toothing.
  113. Koestermeier Karl-Heinz,DEX, Method for forming a workpiece by flow-forming.
  114. Koenigsmann, Holger J.; Perry, Andrew C.; Hunt, Thomas J.; Gilman, Paul S., Method for forming sputter target assemblies.
  115. Zimmermann Willi,DEX ; Stein Bernd,DEX ; Zimmermann Jurgen,DEX, Method for manufacturing internally geared parts.
  116. Watanabe Mineo (Tokyo JPX) Harada Hitoshi (Tokyo JPX) Takemura Masanori (Tokyo JPX), Method for manufacturing wafer.
  117. Henriet Dominique (Chambourcy FRX) Didier Paul (Gueugnon FRX), Method for pickling or cleaning materials of steel, in particular stainless steel.
  118. Mintz Donald M. (Sunnyvale CA), Method for preparing a shield to reduce particles in a physical vapor deposition chamber.
  119. Talieh Humoyoun (Santa Clara) Gilboa Haim (Palo Alto) Mintz Donald M. (Sunnyvale CA), Method for preparing a shield to reduce particles in a physical vapor deposition chamber.
  120. Stellrecht David E., Method for producing near net shape planar sputtering targets and an intermediate therefor.
  121. Raj P. Singh ; Michael J. Miller, Method for purifying a tantalum compound using a fluoride compound and sulfuric acid.
  122. Lavernia Enrique J., Method for thermal spraying of nanocrystalline coatings and materials for the same.
  123. Fujiyama Yasutomo (Tokyo JPX), Method for treating surface of construction material for vacuum apparatus, and the material treated thereby and vacuum t.
  124. Hiroji Aga JP; Naoto Tate JP; Kiyoshi Mitani JP, Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method.
  125. Hirano Yoshihisa (Tokyo JPX) Tahara Yoshifumi (Tokyo JPX) Hasegawa Isahiro (Tokyo JPX) Horioka Keiji (Tokyo JPX), Method of adjusting the temperature of a semiconductor wafer.
  126. Watanabe Toshiya (Kanagawa JPX) Kitabayashi Tetsuo (Kanagawa JPX), Method of and apparatus for applying voltage to electrostatic chuck.
  127. Wang, Hong; He, Yongxiang; Stow, Clifford C, Method of cleaning a coated process chamber component.
  128. Bulso ; Jr. Joseph D. (Canton OH), Method of forming a contoured container.
  129. Sandhu, Gurtej S.; Iyer, Ravi, Method of making a void-free aluminum film.
  130. Annavarapu Suresh ; Ettlinger John ; Sica Tony, Method of making unreacted metal/aluminum sputter target.
  131. Kim Jin-sung,KRX ; Lee Young-gu,KRX ; Shim Kyoung-man,KRX ; Choi Kyue-sang,KRX, Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby.
  132. Hajime Hirofumi,JPX ; Yubitani Toshiharu,JPX, Method of manufacturing semiconductor wafers.
  133. Kato Tadahiro,JPX ; Masumura Hisashi,JPX ; Okuni Sadayuki,JPX ; Kudo Hideo,JPX, Method of manufacturing semiconductor wafers.
  134. Hasegawa Fumihiko (Nishishirakawa-gun JPX) Kobayashi Makoto (Nishishirakawa-gun JPX) Hirano Tameyoshi (Hiroshima JPX), Method of manufacturing semiconductor wafers and process of and apparatus for grinding used for the same method of manuf.
  135. Ivanov, Eugene Y., Method of manufacturing sputter targets with internal cooling channels.
  136. Ivanov, Eugene Y., Method of manufacturing sputter targets with internal cooling channels.
  137. Kato Tadahiro,JPX ; Masumura Hisashi,JPX ; Nakano Masami ; Kudo Hideo,JPX, Method of polishing semiconductor wafers.
  138. Niwa Kenji (Chiba JPX) Ichikawa Ichiro (Chiba JPX), Method of purifying tantalum.
  139. Bailey Robert Jeffrey ; Brady Patrick J., Method of reducing metal contamination during semiconductor processing in a reactor having metal components.
  140. Laube David P. (Mesa AZ), Method of removing sputter deposition from components of vacuum deposition equipment.
  141. Popiolkowski, Alan R.; Hart, Shannon M.; Schweitzer, Marc O.; Liu, Alan B.; Watia, Jennifer L., Method of surface texturizing.
  142. Popiolkowski, Alan R; Hart, Shannon M.; Schweitzer, Marc O.; Liu, Alan B.; Watia, Jennifer L.; West, Brian; Menzie, Mark, Method of surface texturizing.
  143. Lazarz Kimberly Ann ; Zaluzec Matthew John, Method to provide a smooth paintable surface after aluminum joining.
  144. Angelo Darryl ; Sundarrajan Arvind ; Ding Peijun ; Tsung James H. ; Hong Ilyoung R. ; Chin Barry, Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance.
  145. Richardson Brett C. ; Crapse Merrill D. ; Tuley Philip, Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber.
  146. Kolenkow Robert J., Methods and apparatus for sputtering with rotating magnet sputter sources.
  147. Mears Eric L. (Rockport MA), Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum.
  148. Dastolfo ; Jr. LeRoy E. (Lower Burrell PA) Tarcy Gary P. (Plum Boro PA), Milling solution and method.
  149. Dastolfo ; Jr. LeRoy E. (Lower Burrell PA) Tarcy Gary P. (Plum Boro PA) Wehrle William P. (Copley OH) Davis Mark E. (Sheffield Lake OH), Milling solution and method.
  150. Arami Junichi (Tokyo JPX) Fukasawa Kazuo (Kofu JPX) Ito Takashi (Tokyo JPX), Mount for supporting substrates and plasma processing apparatus using the same.
  151. Kimoto Masanari (Kobe JPX) Tsuda Tetsuaki (Nishinomiya JPX) Tsuji Masanori (Hannan JPX) Hoboh Yoshihiko (Osaka JPX) Ikeda Hiroshi (Nagoya JPX) Aimu Takao (Nagoya JPX) Uto Hideyuki (Nagoya JPX) Fukui , Multilayer plated aluminum sheets.
  152. Lo Yung-Tsun,TWX ; Huang Tzu-Hsin,TWX ; Tseng Hua-Jen,TWX ; Tsai Pei-Wei,TWX, Non-sticking semi-conductor wafer clamp and method of making same.
  153. Kim, Jaeyeon, PVD target constructions comprising projections.
  154. Fodor Mark A. (Los Gatos CA) Bercaw Craig A. (Sunnyvale CA) Dornfest Charles (Fremont CA), Patterned susceptor to reduce electrostatic force in a CVD chamber.
  155. Moslehi Mehrdad M. ; Heimanson Dorian ; Davis Cecil J. ; Omstead Thomas R., Physical vapor deposition system having reduced thickness backing plate.
  156. Parfeniuk, Chris; Beier, Tony, Physical vapor deposition target constructions.
  157. Henriet Dominique (Chambourcy FRX) Paul Didier (Gueugnon FRX) Prost Laurent (Ugine FRX), Pickling process in an acid bath of metallic products containing titanium or at least one chemical element of the titani.
  158. Sieck Peter A. (Santa Rosa CA) Kirs Milan R. (Lafayette CA) Trumbly Terry A. (Pleasant Hill CA), Planar magnetron sputtering apparatus.
  159. Kobayashi Shigeru (Tokyo JPX) Abe Katsuo (Yokosuka JPX) Sakata Masao (Yokohama JPX) Kasahara Osamu (Kokubunji JPX) Ogishi Hidetsugu (Hachioji JPX), Planar magnetron sputtering with modified field configuration.
  160. Xu Zheng ; Chen Fusen ; Fu Jianming, Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source.
  161. Salimian Siamak (Sunnyvale CA) Delfino Michelangelo (Los Altos CA) Chung Bu-Chin (Saratoga CA), Plasma etch equipment.
  162. Kava Joseph (San Jose CA) McGovern Richard J. (San Jose CA) Blackburn Greg A. (San Jose CA), Plasma processing apparatus employing a textured focus ring.
  163. Ikeda Hiroyuki,JPX ; Shiga Shoji,JPX ; Mori Ryoichi,JPX, Plasma processing device for circuit supports.
  164. Jonathan D. Mohn ; Arthur H. Sato ; Kien Nai Chuc, Plasma reactor inductive coil antenna with flat surface facing the plasma.
  165. Marantz Daniel R. ; Kowalsky Keith A. ; Baughman James R. ; Cook David J., Plasma transferred wire arc thermal spray apparatus and method.
  166. Kawakami Satoru (Sagamihara JPX) Suzuki Tsuyoshi (Kawasaki JPX) Arami Junichi (Tokyo-To JPX) Deguchi Yoichi (Machida JPX), Plasma treatment apparatus.
  167. Suzuki,Tatsutoshi, Polishing pad and method of fabricating semiconductor substrate using the pad.
  168. Lin, Yixing; Xu, Dajiang; Stow, Clifford, Process chamber component with layered coating and method.
  169. Matsuyama Jinsho,JPX ; Kariya Toshimitsu,JPX ; Fujioka Yasushi,JPX ; Takei Tetsuya,JPX ; Nakagawa Katsumi,JPX ; Kanai Masahiro,JPX ; Echizen Hiroshi,JPX, Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suit.
  170. Kanai Masahiro (Tokyo JPX) Matsuyama Jinsho (Nagahama JPX) Nakagawa Katsumi (Nagahama JPX) Kariya Toshimitsu (Nagahama JPX) Fujioka Yasushi (Nagahama JPX) Takei Tetsuya (Naghama JPX) Echizen Hiroshi , Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable.
  171. Bogenschtz August F. (Oberdischingen DEX) Jostan Josef L. (Ulm DEX) Ostwald Robert (Ulm DEX), Process for metallizing a ceramic substrate.
  172. Earhart Jonathan P. (Orinda CA) Kostecki John A. (Pinole CA) McNutt Adrian C. (Rock Springs WY), Process for removing alkali metal aluminum silicate scale deposits from surfaces of chemical process equipment.
  173. Hanson David R. ; Huston ; III Hance H. ; Srikrishnan Kris V., Process for restoring rejected wafers in line for reuse as new.
  174. Schapira Joseph (Paris FRX) Droniou Patrick (Colombes FRX) Pelletier Patrice (Deuil la Barre FRX) Gagnepain Stphane (Saint Ouen FRX), Process for the treatment of aluminum based substrates for the purpose of anodic oxidation, bath used in said process an.
  175. Steven C. Crocker, Process kit parts and method for using same.
  176. Hellmann Dietmar,DEX ; Leist Johann,DEX, Quartz glass component for a reactor housing a method of manufacturing same and use thereof.
  177. Yamada Yoshiaki (Tokyo JPX), Reactive sputtering system for depositing titanium nitride without formation of titanium nitride on titanium target and.
  178. Pandhumsoporn Tamarak ; Feldman Mark, Recessed bonding of target for RF diode sputtering.
  179. Hunt, Thomas J.; Koenigsmann, Holger J.; Gilman, Paul S., Recessed sputter target.
  180. Le,Hien Minh Huu; Miller,Keith A.; Kieu,Hoa T.; Ngan,Kenny King Tai, Reducing particle generation during sputter deposition.
  181. Doan,Trung T.; Ngan,Kenny King Tai, Refurbishment of sputtering targets.
  182. Fu Jianming, Rotating sputter magnetron assembly.
  183. Tanaka Yoichiro,JPX, Shield for a physical vapor deposition chamber.
  184. Ke Kuang-Han ; Pu Bryan Y. ; Shan Hongching ; Wang James ; Fong Henry ; Li Zongyu ; Welch Michael D., Shield or ring surrounding semiconductor workpiece in plasma chamber.
  185. Bardus Steven L. ; Qamar Sohail S. ; Bansal Anurag, Sputter target assembly having a metal-matrix-composite backing plate and methods of making same.
  186. Fu Jianming ; van Gogh James, Sputter target for eliminating redeposition on the target sidewall.
  187. Hunt Thomas J. ; Gilman Paul S., Sputter target/backing plate assembly and method of making same.
  188. Homma Yoshio (Hinode JPX) Tsunekawa Sukeyoshi (Tokorozawa JPX) Sasabe Shunji (Iruma JPX), Sputtering apparatus.
  189. Dennis R. Hollars, Sputtering apparatus and process for high rate coatings.
  190. Harra David J. (San Francisco CA), Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile.
  191. Anderson Robert L. (Palo Alto CA) Helmer John C. (Palo Alto CA), Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile.
  192. Hieronymi Robert G. ; Lutz Gary D., Sputtering assembly and target therefor.
  193. Su Jingang ; Yee Nelson A. ; Forster John C. ; Ngan Kenny King-Tai ; Yang Lisa L., Sputtering chamber shield promoting reliable plasma ignition.
  194. Demaray Richard E. (Portola Valley CA) Herrera Manuel (San Mateo CA) Berkstresser David E. (Los Gatos CA), Sputtering device and target with cover to hold cooling fluid.
  195. Fu, Jianming, Sputtering of aligned magnetic materials and magnetic dipole ring used therefor.
  196. Mahvan Nader (Cupertino CA) Wilkinson David (Danville CA) Ichikawa Koji (Kumagaya JPX), Sputtering shield.
  197. Kachalov,Mikhail Y.; Wickersham, Jr.,Charles E., Sputtering target assemblies using resistance welding.
  198. Park, Jae Yeol, Sputtering target assembly and sputtering apparatus using the same.
  199. Okabe, Takeo; Yamakoshi, Yasuhiro; Miyashita, Hirohito, Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles.
  200. Yu, Sang-Ho; Cha, Yonghwa Chris; Abburi, Murali; Singhvi, Shri; Chen, Fufa, Staged aluminum deposition process for filling vias.
  201. Tanaka Yoichiro, Step coverage and overhang improvement by pedestal bias voltage modulation.
  202. Lu Chih-Yuan,TWX, Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers.
  203. Maeda Kazuo,JPX ; Ohira Kouichi,JPX ; Nishimoto Yuhko,JPX, Substrate holder and reaction apparatus.
  204. Gerhard M. Schneider ; Hamid Noorbakhsh ; Bryan Pu ; Kaushik Vaidya ; Brad Leroy Mays ; Hung Dao ; Evans Lee ; Hongging Shan, Support assembly with thermal expansion compensation.
  205. Donde Arik, Surface preparation to enhance adhesion of a dielectric layer.
  206. Rosenberg, Harry; Ozturk, Bahri; Wang, Guangxin; LaRue, Wesley, Tantalum sputtering target and method of manufacture.
  207. Ivanov, Eugene Y.; Smathers, David B.; Wickersham, Jr., Charles E.; Zhu, Lin, Target and method of optimizing target profile.
  208. Voser, Stephan; Lorenz, Eduard Karl, Target comprising thickness profiling for an RF magnetron.
  209. Hurwitt Steven (Park Ridge NJ) Hieronymi Robert (Rock Cavern NY) Wagner Israel (Monsey NY), Target cooling and support for magnetron sputter coating apparatus.
  210. Kholodenko Arnold ; Lee Ke Ling ; Shendon Maya ; Quiles Efrain, Temperature control system for semiconductor process chamber.
  211. Brueckner, Karl; West, Brian; Wang, Hong, Textured chamber surface.
  212. Kuhn Heinrich,DEX ; Jaculi Dieter,DEX ; Pliefke Engelbert,DEX ; Bos Ulrich,DEX ; Frass Werner,DEX, Thermal process for applying hydrophilic layers to hydrophobic substrates for offset printing plates.
  213. Kojima Yoshitaka,JPX ; Arikawa Hideyuki,JPX ; Haginoya Mitsuo,JPX ; Mebata Akira,JPX ; Sasada Tetsuo,JPX ; Toriya Hajime,JPX, Thermal stress relaxation type ceramic coated heat-resistant element and method for producing the same.
  214. Scruggs David M. (Oceanside CA), Titanium-containing ferrous hard-facing material source and method for hard facing a substrate.
  215. Gerald Zheyao Yin ; Xue-Yu Qian ; Patrick L. Leahey ; Jonathan D. Mohn ; Waiching Chow ; Arthur Y. Chen ; Zhi-Wen Sun ; Brian K. Hatcher, Treatment of etching chambers using activated cleaning gas.
  216. Lai Wen-Chao (Westboro MA) Rourke William J. (Worcester MA) Natansohn Samuel (Sharon MA), Treatment of industrial wastes.
  217. Li Shinhwa, Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers.
  218. Yao Tse-Yong ; Xu Zheng ; Ngan Kenny King-tai ; Chen Xing ; Urbahn John ; Bourget Lawrence P., Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition.
  219. Akiyama Kazuyoshi,JPX ; Aoike Tatsuyuki,JPX ; Shirasuna Toshiyasu,JPX ; Murayama Hitoshi,JPX ; Otsuka Takashi,JPX ; Tazawa Daisuke,JPX ; Hosoi Kazuto,JPX, Vacuum processing apparatus and vacuum processing method.
  220. Bottomfield, Roger L., Vapor deposition chamber components and methods of making the same.
  221. Niori Yusuke (Nagoya JPX) Nobori Kazuhiro (Haguri JPX) Ushikoshi Ryusuke (Handa JPX) Umemoto Koichi (Toyota JPX), Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means.
  222. Miura, Ryuichi; Tomaru, Kazuhiko; Yoneyama, Tsutomu; Handa, Ryuichi, Wafer holder of ion implantation apparatus.
  223. Koai Keith K. ; Lei Lawrence Chung-Lai ; Ellwanger Russell C., Wafer pedestal with a purge ring.
  224. Nagasaki Koichi,JPX ; Kuchimachi Kazuhiro,JPX ; Nagano Saburo,JPX ; Kawanabe Yasunori,JPX ; Aida Hiroshi,JPX ; Kitazawa Kenji,JPX, Wafer support member.
  225. Han, Nianci; Shih, Hong; Xu, Li; Ye, Yan, Wavy and roughened dome in plasma processing reactor.
  226. Tanaka Tadashi (Nagoya JPX) Mizuno Yoshikazu (Nagoya JPX) Sugita Mitsuru (Nagoya JPX) Sawano Katsumi (Nagoya JPX) Ono Akira (Nagoya JPX), Wet friction member.

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