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Radio frequency power delivery system 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H03H-007/38
출원번호 UP-0554979 (2006-10-31)
등록번호 US-7764140 (2010-08-13)
발명자 / 주소
  • Nagarkatti, Siddharth P.
  • Kishinevsky, Michael
  • Shajii, Ali
  • Kalvaitis, Timothy E.
  • McKinney, Jr., William S.
  • Goodman, Daniel
  • Holber, William M.
  • Smith, John A.
  • Bystryak, Ilya
출원인 / 주소
  • MKS Instruments, Inc.
대리인 / 주소
    Proskauer Rose LLP
인용정보 피인용 횟수 : 56  인용 특허 : 7

초록

A system and method are provided for delivering power to a dynamic load. The system includes a power supply providing DC power having a substantially constant power open loop response, a power amplifier for converting the DC power to RF power, a sensor for measuring voltage, current and phase angle

대표청구항

What is claimed is: 1. A system for delivering power to a dynamic load, comprising: a power supply providing DC power having a substantially constant power open loop response; a power amplifier for converting the DC power to RF power; a sensor for measuring voltage, current and phase angle between

이 특허에 인용된 특허 (7)

  1. Mavretic Anton (Marlton NJ) Ciszek Andrew (Maple Shade NJ) Stach Joseph (Medford NJ), Apparatus for matching a variable load impedance with an RF power generator impedance.
  2. Kishinevsky,Michael, Method and apparatus for preventing instabilities in radio-frequency plasma processing.
  3. Goodman, Daniel, Methods and apparatus for calibration and metrology for an integrated RF generator system.
  4. Goodman,Daniel, Methods and apparatus for calibration and metrology for an integrated RF generator system.
  5. Patrick Roger (Santa Clara CA) Bose Frank A. (Wettingen CHX), Power control and delivery in plasma processing equipment.
  6. Goodman, Daniel; Bortkiewicz, Andrzej; Alley, Gary D.; Horne, Stephen F.; Holber, William M., RF power supply with integrated matching network.
  7. Fujii Shuitsu,JPX, System for impedance matching and power control for apparatus for high frequency plasma treatment.

이 특허를 인용한 특허 (56)

  1. Valcore, Jr., John C.; Lyndaker, Bradford J., Adjustment of power and frequency based on three or more states.
  2. Valcore, Jr., John C.; Povolny, Henry S., Arrangement for plasma processing system control based on RF voltage.
  3. Howald, Arthur M.; Valcore, Jr., John C., Cable power loss determination for virtual metrology.
  4. Albarede, Luc, Chamber matching for power control mode.
  5. Fong, Andrew S.; Valcore, Jr., John C., Computation of statistics for statistical data decimation.
  6. Valcore, Jr., John C.; Lyndaker, Bradford J.; Sato, Arthur, Determining a malfunctioning device in a plasma system.
  7. Valcore, Jr., John C.; Lyndaker, Bradford J., Determining a value of a variable on an RF transmission model.
  8. Bhutta, Imran Ahmed, Electronically variable capacitor and RF matching network incorporating same.
  9. Valcore, Jr., John C.; Singh, Harmeet; Povolny, Henry, Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching.
  10. Mason, Christopher C., High frequency solid state switching for impedance matching.
  11. Mason, Christopher C., High frequency solid state switching for impedance matching.
  12. Bhutta, Imran Ahmed, High speed high voltage switching circuit.
  13. Bhutta, Imran, High voltage switching circuit.
  14. Mason, Christopher C., Impedance matching network with high frequency switching.
  15. Valcore, Jr., John C.; Lyndaker, Bradford J., Impedance-based adjustment of power and frequency.
  16. Marakhtanov, Alexei; Chen, Zhigang; Holland, John Patrick, Ion energy control by RF pulse shape.
  17. Owen, Christopher Michael, LCL high power combiner.
  18. Owen, Christopher Michael, LCL high power combiner.
  19. Buchanan, Walter Riley, Membrane plasma reactor.
  20. Brouk, Victor; Heckman, Randy, Method and apparatus for controlling ion energy distribution.
  21. Bhutta, Imran Ahmed, Method for controlling a plasma chamber.
  22. Brouk, Victor; Heckman, Randy; Hoffman, Daniel J., Method for controlling ion energy distribution.
  23. Brouk, Victor; Hoffman, Daniel J.; Carter, Daniel, Method of controlling the switched mode ion energy distribution system.
  24. Brouk, Victor; Hoffman, Daniel J.; Carter, Daniel, Method of controlling the switched mode ion energy distribution system.
  25. Valcore, Jr., John C.; Lyndaker, Bradford J., Methods and apparatus for controlling plasma in a plasma processing system.
  26. Nam, Sang Ki; Dhindsa, Rajinder, Methods and apparatus for correcting for non-uniformity in a plasma processing system.
  27. Valcore, Jr., John C.; Lyndaker, Bradford J.; Singh, Harmeet, Methods and apparatus for synchronizing RF pulses in a plasma processing system.
  28. Buchanan, Walter Riley, Plasma reactor for liquid and gas.
  29. Buchanan, Walter Riley; Forsee, Grant William, Quasi-resonant plasma voltage generator.
  30. Srivastava, Aseem K.; DiVergilio, William F., RF coupled plasma abatement system comprising an integrated power oscillator.
  31. Bhutta, Imran Ahmed, RF impedance matching network.
  32. Bhutta, Imran Ahmed, RF impedance matching network.
  33. Bhutta, Imran Ahmed, RF impedance matching network.
  34. Bhutta, Imran Ahmed, RF impedance matching network.
  35. Mavretic, Anton, RF impedance matching network.
  36. Mavretic, Anton, RF impedance matching network.
  37. Valcore, Jr., John C.; Rogers, James Hugh; Webb, Nicholas Edward; Muraoka, Peter T., RF impedance model based fault detection.
  38. Valcore, Jr., John C.; Howald, Arthur M., Segmenting a model within a plasma system.
  39. Valcore, Jr., John C., Soft pulsing.
  40. Valcore, Jr., John C.; Lyndaker, Bradford J., State-based adjustment of power and frequency.
  41. Valcore, Jr., John C.; Singh, Harmeet; Lyndaker, Bradford J., Sub-pulsing during a state.
  42. Mavretic, Anton, Switching circuit.
  43. Mavretic, Anton, Switching circuit.
  44. Mavretic, Anton, Switching circuit for RF currents.
  45. van Rijs, Freerk; Harm, Alexander Otto, System and method for compensating for changes in an output impedance of a power amplifier.
  46. Brouk, Victor; Heckman, Randy; Hoffman, Daniel J., System, method and apparatus for controlling ion energy distribution.
  47. Hoffman, Daniel J.; Brouk, Victor; Carter, Daniel, System, method and apparatus for controlling ion energy distribution of a projected plasma.
  48. Hoffman, Daniel J.; Carter, Daniel; Brouk, Victor; Hattel, William J., Systems and methods for calibrating a switched mode ion energy distribution system.
  49. Carter, Daniel; Brouk, Victor; Hoffman, Daniel J., Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system.
  50. Long, Maolin; Paterson, Alex, Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers.
  51. Valcore, Jr., John C.; Lyndaker, Bradford J., Tuning a parameter associated with plasma impedance.
  52. Liu, Chin-Yi; Schaefer, David; Marohl, Dan, Universal non-invasive chamber impedance measurement system and associated methods.
  53. Valcore, Jr., John C.; Lyndaker, Bradford J., Using modeling to determine ion energy associated with a plasma system.
  54. Valcore, Jr., John C.; Lyndaker, Bradford J., Using modeling to determine wafer bias associated with a plasma system.
  55. Brouk, Victor; Hoffman, Daniel J., Wafer chucking system for advanced plasma ion energy processing systems.
  56. Brouk, Victor; Hoffman, Daniel J.; Carter, Daniel; Kovalevskii, Dmitri, Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel.
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