Growing method of SiC single crystal
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0529115
(2006-09-28)
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등록번호 |
US-7767021
(2010-08-24)
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우선권정보 |
KR-10-2005-0091008(2005-09-29); KR-10-2005-0091014(2005-09-29); KR-10-2006-0065463(2006-07-12); KR-10-2006-0065464(2006-07-12) |
발명자
/ 주소 |
- Seo, Soo-Hyung
- Song, Joon-Suk
- Oh, Myung-Hwan
|
출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
8 |
초록
▼
A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of α-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible,
A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of α-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible, arranging a SiC seed in the crucible, and growing the SiC single crystal by heating the SiC source.
대표청구항
▼
What is claimed is: 1. A growing method of a SiC single crystal comprising the steps of: performing a first thermal treatment on a SiC source for decreasing a specific surface area, increasing a ratio of α-phase and making a mole fraction of C greater than that of Si in the source; performing
What is claimed is: 1. A growing method of a SiC single crystal comprising the steps of: performing a first thermal treatment on a SiC source for decreasing a specific surface area, increasing a ratio of α-phase and making a mole fraction of C greater than that of Si in the source; performing a second thermal treatment on the SiC source, high purity Si being added in performing the second thermal treatment on the SiC source; providing the SiC source into a crucible; arranging a single SiC seed in the crucible; growing the SiC single crystal by heating the SiC source; wherein the first thermal treatment of the SiC source is carried out at a temperature of 1500 to 2600° Celsius and at a pressure of 50 to 4000 Torr; and after performing the first thermal treatment a value of Acry/(Acry+Aporous) ranges from about 0.8600 to about 0.8625 for the SiC source, where Acry is an area percent of a crystal powder and Aporous is an area percent of a porous powder. 2. The method of claim 1, wherein a hydrocarbon gas is mixed with the SiC source during the first thermal treatment step. 3. The method of claim 1, wherein the SiC source contains an α-phase SiC powder equal or greater than 10 vol % through the step of the first thermal treatment. 4. The method of claim 1, wherein the second thermal treatment step is carried out at a temperature of 1300 to 2500° Celsius and at a pressure of 50 to 4000 Torr. 5. The method of claim 1, wherein 0.05 to 3 wt % of the high purity Si is added to the SiC source. 6. The method of claim 1, wherein the high purity Si is a Si powder or a Si compound gas. 7. The method of claim 1, wherein the high purity Si is a Si compound gas is silane, silicon chloride, or an organic silicon compound. 8. The method of claim 1, wherein the SiC seed has a hexagonal (6H, 4H, 2H) structure of which a diameter is equal or less than 8 inches. 9. The method of claim 1, wherein the single crystal is grown from one of the SiC seed orientations of {0001}, {1100), {1120}, and {0338}. 10. The method of claim 1, wherein in the step of growing the SiC single crystal, a hydrocarbon gas with He or H2 gas is supplied, and a SiH4 gas is supplied with He gas. 11. The method of claim 1, wherein, in the growing step, 4H, 6H, 3C, or 15R poly type SiC single crystal is grown on the SiC seed.
이 특허에 인용된 특허 (8)
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Kijima Kazunori (131 ; Fukakusa Goudou Shukusha ; Nishidate-cho Kanyuuchi ; Fukakusa ; Fushimi-Ku Kyoto-shi ; Kyoto JPX) Arai Eiki (Narashino JPX) Miyazawa Youichi (Narashino JPX) Konishi Mikio (Nara, Highly pure sintered carbide with high electric conductivity and process of producing the same.
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Stein Ren (Rttenbach DEX), Method for manufacturing single-crystal silicon carbide.
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Kito Yasuo,JPX ; Kotanshi Youichi,JPX ; Onda Shoichi,JPX ; Hanazawa Tatuyuki,JPX ; Kitaoka Eiji,JPX, Method of producing single-crystal silicon carbide.
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Denton Ivor E. (Wantage GB2) Henney John W. (Abingdon GB2), Preparation of dense ceramics.
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Suzuki Takashi (Niigata JPX) Kawakami Takamasa (Niigata JPX) Nakano Rieko (Niigata JPX) Koyama Takeshi (Niigata JPX) Izaki Kansei (Niigata JPX) Mori Akira (Niigata JPX) Orisaku Masami (Matsudo JPX), Process for preparing silicon nitride, silicon carbide or fine powdery mixture thereof.
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Kanemoto Masashi,JPX ; Endo Shinobu,JPX ; Hashimoto Masao,JPX, Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single.
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Arahori Tadahisa (Chiba JPX) Hayashi Shigetoshi (Chiba JPX) Minagawa Kazuhiro (Kawagoe JPX), Process for producing silicon carbide-base complex.
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Stan Mark Anthony ; Patton Martin Owen ; Warner Joseph Dale, Thin film 2H .alpha.-SiC.
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