IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0961928
(2007-12-20)
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등록번호 |
US-7771512
(2010-08-30)
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발명자
/ 주소 |
- Norton, Grant
- McIIRoy, David
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출원인 / 주소 |
- Washington State University Research Foundation
- Idaho Research Foundation, Inc.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
11 인용 특허 :
9 |
초록
▼
Method and apparatus for storing hydrogen. One embodiment of such a method comprises providing a storage apparatus having a substrate and a nanostructure mat on at least a portion of a side of the substrate. The nanostructure mat comprises a plurality of nanostructures having a surface ionization st
Method and apparatus for storing hydrogen. One embodiment of such a method comprises providing a storage apparatus having a substrate and a nanostructure mat on at least a portion of a side of the substrate. The nanostructure mat comprises a plurality of nanostructures having a surface ionization state which causes more than one layer of hydrogen to adsorb onto the nanostructures. The method can also include exposing the nanostructure mat to hydrogen such that more than one layer of hydrogen adsorbs onto the nanostructures.
대표청구항
▼
We claim: 1. A method for storing hydrogen, comprising: providing a storage apparatus having a substrate and a nanostructure mat on at least a portion of a side of the substrate, wherein the nanostructure mat comprises a plurality of nanostructures individually having a surface with a surface ioniz
We claim: 1. A method for storing hydrogen, comprising: providing a storage apparatus having a substrate and a nanostructure mat on at least a portion of a side of the substrate, wherein the nanostructure mat comprises a plurality of nanostructures individually having a surface with a surface ionization state less than a natural ionization state of the individual nanostructures, wherein the surface ionization state causes more than one layer of hydrogen to adsorb onto the surface of the individual nanostructures; and exposing the nanostructure mat to hydrogen such that more than one layer of hydrogen adsorbs onto the surface of the individual nanostructures. 2. The method of claim 1 wherein the nanostructures comprise silicon oxide nanosprings, and exposing the nanostructure mat to hydrogen comprises adsorbing more than one layer of hydrogen onto the nanosprings at an ambient temperature. 3. The method of claim 1, further comprising desorbing the hydrogen from the nanostructures at a temperature of about −50° C. to about 100° C. 4. The method of claim 1 wherein the nanostructures comprise nanosprings composed of at least one of glass, ceramics and/or ceramic oxides. 5. The method of claim 1, wherein exposing the nanostructure mat to hydrogen comprises flowing hydrogen onto the mat at approximately an ambient temperature. 6. An apparatus for storing hydrogen, comprising: a substrate; and a nanostructure mat covering at least a portion of the substrate, wherein the nanostructure mat comprises nanostructures individually having a surface with a surface ionization state less than a natural ionization state of the individual nanostructures, the surface ionization state causes more than one layer of hydrogen to adsorb onto the nanostructures when exposed to a gas containing hydrogen. 7. The apparatus of claim 6 wherein the nanostructures comprise nanosprings or nanocoils. 8. The apparatus of claim 6 wherein the nanostructures comprise nanosprings composed of at least one of silicon oxide, a ceramic, and/or a ceramic oxide. 9. The apparatus of claim 6 wherein the substrate is hexagonal and the nanostructure mat covers at least a portion of an interior surface of the substrate. 10. The apparatus of claim 6 wherein the substrate is a tube having a rectilinear, polygonal, circular, or curved cross-sectional shape and the nanostructure mat covers at least a portion of an interior surface of the tube. 11. The apparatus of claim 6, further comprising an activator configured to impart an energy to the nanostructure mat to thereby desorb hydrogen from the nanostructures. 12. The apparatus of claim 11 wherein the activator comprises a heating element at the substrate. 13. The apparatus of claim 11 wherein the nanostructure mat is at a first side of the substrate and the activator comprises a chamber configured to direct heated gas across a second surface of the substrate spaced apart from the first surface of the substrate. 14. A system for storing hydrogen, comprising: a container; and a hydrogen storage apparatus in the container, wherein the hydrogen storage apparatus includes a substrate and a nanostructure mat covering at least a portion of the substrate, and wherein the nanostructure mat comprises nanostructures individually having a surface ionization state less than a natural ionization state of the individual nanostructures, the surface ionization state causes more than one layer of hydrogen to adsorb onto the surface of the individual nanostructures. 15. The apparatus of claim 14 wherein the nanostructures comprise nanosprings and/or nanocoils. 16. The apparatus of claim 14 wherein the nanostructures comprise nanosprings composed of at least one of silicon oxide, a ceramic, and/or a ceramic oxide. 17. The apparatus of claim 14 wherein the substrate is hexagonal and the nanostructure mat covers at least a portion of an interior surface of the substrate. 18. The apparatus of claim 14 wherein the substrate is a tube having a rectilinear, polygonal, circular, or curved cross-sectional shape and the nanostructure mat covers at least a portion of an interior surface of the tube. 19. The apparatus of claim 14, further comprising an activator configured to impart an energy to the nanostructure mat to thereby desorb hydrogen from the nanostructures. 20. The apparatus of claim 19 wherein the activator comprises a heating element at the substrate of the hydrogen storage apparatus. 21. The apparatus of claim 19 wherein the activator comprises a chamber through which a heated gas can pass across a surface of the substrate. 22. The apparatus of claim 19 wherein the activator comprises a heating element at a surface of the container. 23. The apparatus of claim 19 wherein the activator comprises a chamber through which a heated gas can pass across a surface of the container. 24. A method for reversibly holding hydrogen, comprising: exposing a gas containing hydrogen with a storage device, the storage device having a substrate and a plurality of nanostructures on at least a portion of the substrate, the nanostructures individually having an external surface with a surface ionization state less than a natural ionization state of the individual nanostructures; and adsorbing a layer of hydrogen onto the external surface of the individual nanostructures, wherein the adsorbed layer of hydrogen causes the surface ionization state of the individual nanostructures to shift toward the natural ionization state. 25. The method of claim 24, wherein the layer of hydrogen is a first layer of hydrogen, and wherein the method further comprises adsorbing a second layer of hydrogen onto the first layer of hydrogen, and further wherein the second layer of hydrogen causes the surface ionization state of the individual nanostructures to shift closer toward the natural ionization state than the first layer of hydrogen. 26. The method of claim 24, further comprising desorbing at least some of the hydrogen from the nanostructures at a temperature of about −50° C. to about 100° C. 27. The method of claim 24 wherein exposing a gas includes exposing a gas containing hydrogen with a storage device, the storage device having a substrate and a plurality of silicon oxide (SiO2) nanosprings on at least a portion of the substrate, the silicon oxide (SiO2) nanosprings individually having an external surface with a surface ionization state less than a natural ionization state of the individual silicon oxide (SiO2) nanosprings. 28. The method of claim 24 wherein exposing a gas includes exposing a gas containing hydrogen with a storage device, the storage device having a substrate and a plurality of silicon oxide (SiO2) nanosprings on at least a portion of the substrate, the silicon oxide (SiO2) nanosprings individually having an external surface with a surface ionization state between Si3+ and Si3.5+.
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