IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
UP-0847721
(2007-08-30)
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| 등록번호 |
US-7776697
(2010-09-06)
|
|
발명자
/ 주소 |
- Currie, Matthew T.
- Lochtefeld, Anthony J.
- Hammond, Richard
- Fitzgerald, Eugene A.
|
| 출원인 / 주소 |
- Taiwan Semiconductor Manufacturing Company, Ltd.
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| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
5 인용 특허 :
161 |
초록
▼
Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are pre
Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
대표청구항
▼
What is claimed is: 1. A method for fabricating a semiconductor structure in a substrate, the method comprising the steps of: disposing at least one strained region on the substrate, thereby defining an interface therebetween, the at least one strained region having a distal zone away from the inte
What is claimed is: 1. A method for fabricating a semiconductor structure in a substrate, the method comprising the steps of: disposing at least one strained region on the substrate, thereby defining an interface therebetween, the at least one strained region having a distal zone away from the interface and having an intermediate zone between the interface and the distal zone; disposing a gate dielectric proximate the distal zone; and disposing a gate electrode proximate the gate dielectric; wherein the substrate, the interface, the at least one strained region, the gate dielectric, and the gate electrode are characterized at least in part by an impurity gradient, the impurity gradient having a value substantially equal to zero in the distal zone and having an increasing value in the intermediate zone in a direction from the distal zone to the interface, the impurity gradient describing a concentration of Ge. 2. A method for fabricating a semiconductor device, the method comprising the steps of: defining at least one strained region, the at least one strained region having a distal zone and a proximal zone; forming a gate dielectric proximate the distal zone; and forming a gate electrode proximate the gate dielectric; wherein the at least one strained region, the gate dielectric, and the gate electrode are characterized at least in part by an impurity gradient, the impurity gradient having a value in the distal zone sufficiently low to avoid degradation of device performance and having an increasing value in the proximal zone in a direction extending away from the distal zone, the impurity gradient describing a concentration of Ge. 3. A method for fabricating a semiconductor device, the method comprising the steps of: defining at least one strained region, the at least one strained region having a distal zone; forming a gate dielectric proximate the distal zone; forming a gate electrode proximate the gate dielectric; and forming at least one strain-inducing material proximate the at least one strained region; wherein the at least one strained region and the at least one strain-inducing material are characterized at least in part by an impurity gradient describing a concentration of an impurity as a function of location in the device, the impurity concentration has a first value substantially equal to zero in the distal zone and a second value that increases in a direction extending away from the distal zone in a zone between the distal zone and the strain-inducing material, and the impurity comprises Ge. 4. The method of claim 3, wherein the at least one strained region and the at least one strain-inducing material are disposed over a substrate. 5. The method of claim 4, wherein the substrate consists essentially of Si. 6. The method of claim 4, wherein the substrate comprises a buried insulating layer. 7. The method of claim 3, wherein the gate dielectric has a dielectric constant greater than that of SiO2 and comprises Hf. 8. The method of claim 3, wherein the at least one strain-inducing material comprises SiGe. 9. The method of claim 8, wherein the at least one strain-inducing material is at least partially relaxed. 10. The method of claim 3, wherein the at least one strained region comprises Si. 11. The method of claim 10, wherein the at least one strained region consists essentially of Si. 12. The method of claim 3, wherein the impurity concentration has a value substantially equal to zero in the gate dielectric. 13. The method of claim 3, further comprising forming an isolation region, wherein the isolation region is disposed proximate the at least one strain-inducing material. 14. The method of claim 3, wherein strain in the at least one strained region is induced by lattice mismatch between the at least one strained region and the at least one strain-inducing material. 15. The method of claim 3, wherein the gate electrode comprises a metal. 16. The method of claim 3, wherein the gate electrode comprises polysilicon. 17. The method of claim 1, further comprising forming a source region and a drain region in the substrate prior to defining the at least one strained region. 18. The method of claim 2, further comprising forming a source region and a drain region in the substrate prior to defining the at least one strained region. 19. The method of claim 3, further comprising forming a source region and a drain region prior to defining the at least one strained region.
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