IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0841970
(2007-08-20)
|
등록번호 |
US-7776717
(2010-09-06)
|
발명자
/ 주소 |
- Henley, Francois J.
- Cheung, Nathan W.
|
출원인 / 주소 |
- Silicon Genesis Corporation
|
대리인 / 주소 |
Townsend and Townsend and Crew LLP
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
238 |
초록
▼
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to defin
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
대표청구항
▼
What is claimed is: 1. A method for forming multilayered substrates, the method comprising: providing a donor substrate comprising an overlying a film of material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of material and a lower portion
What is claimed is: 1. A method for forming multilayered substrates, the method comprising: providing a donor substrate comprising an overlying a film of material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of material and a lower portion of the donor substrate; coupling a surface region of the film of material from the donor substrate to a dielectric handle substrate; and applying a laser beam to initiate a controlled cleaving action to remove the film of material using a propagating cleave front at a selected uniform depth measured from a top surface of the donor substrate through a cross section of the donor substrate to form a multi-layered substrate, wherein the multi-layered substrate comprises the film of material overlying the dielectric handle substrate. 2. The method of claim 1 wherein the film of material comprises silicon. 3. The method of claim 1 further comprising inducing bonding between the surface region of the film of material and the dielectric handle substrate prior to applying the laser beam. 4. The method of claim 3 wherein the bonding is induced by application of a voltage. 5. The method of claim 2 further comprising introducing hydrogen into a subsurface region of the donor substrate prior to application of the laser beam. 6. The method of claim 5 wherein the hydrogen is introduced at an energy of about 1 MeV. 7. The method of claim 1 further comprising increasing a global energy state of the dielectric handle substrate by application of a thermal source. 8. The method of claim 7 wherein the thermal source is applied as flood, time-varying, spatially varying, or continuous. 9. The method of claim 7 wherein the thermal source is selected from a group consisting of a photon beam, a fluid jet, a liquid jet, a gas jet, an electromagnetic field, an electron beam, a thermoelectric heating, and a furnace. 10. The method of claim 7 wherein the thermal source comprises a second laser beam. 11. A method for forming multilayered substrates, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy state of the donor substrate and the dielectric handle substrate; and initiating a controlled cleaving action with a laser to remove the film of silicon material using a propagating cleave front at a selected uniform depth measured from a top surface of the donor substrate through a cross section of the donor substrate to form a multi-layered substrate, wherein the multi-layered substrate comprises the film of silicon material overlying the dielectric handle substrate. 12. The method of claim 11 further comprising introducing hydrogen into a subsurface region of the donor substrate prior to increasing the temperature of the donor substrate and the dielectric handle substrate. 13. The method of claim 11 wherein the global energy of the donor substrate and the dielectric handle substrate is increased by application of a thermal source. 14. The method of claim 13 wherein the thermal source is applied as flood, time-varying, spatially varying, or continuous. 15. The method of claim 13 wherein the thermal source is selected from a group consisting of a photon beam, a fluid jet, a liquid jet, a gas jet, an electromagnetic field, an electron beam, a thermoelectric heating, and a furnace. 16. The method of claim 13 wherein the thermal source comprises a laser beam. 17. The method of claim 8 wherein the controlled cleaving action is initiated by application of an additional energy to a selected region of the donor substrate. 18. The method of claim 17 wherein the additional energy is in the form of an electromagnetic field, a beam of photons, or a beam of electrons. 19. A method for forming multilayered substrates, the method comprising: providing a donor substrate comprising an overlying a film of material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of material and a lower portion of the donor substrate, the cleave region resulting from implantation of hydrogen ions into the donor substrate; coupling a surface region of the film of material from the donor substrate to a dielectric handle substrate; inducing bonding between the surface region of the film of material and the dielectric handle substrate; raising a global energy of the substrate to below a state necessary to initiate a controlled cleaving action; and applying an impulse of thermal energy from a thermal source comprising a laser to initiate the controlled cleaving action to remove the film of silicon material using a propagating cleave front at a selected uniform depth measured from a top surface of the donor substrate through a cross section of the donor substrate to form a multi-layered substrate, wherein the multi-layered substrate comprises the film of material overlying the dielectric handle substrate. 20. The method of claim 19 wherein the impulse of thermal energy from the thermal source is applied as flood, time-varying, spatially varying, or continuous. 21. The method of claim 19 wherein the impulse of thermal energy from the thermal source is applied in conjunction with a photon beam, a fluid jet, a liquid jet, a gas jet, an electromagnetic field, an electron beam, a thermoelectric heating, or furnace heating.
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