IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0185188
(2008-08-04)
|
등록번호 |
US-7777126
(2010-09-06)
|
우선권정보 |
TW-96150972(2007-12-28) |
발명자
/ 주소 |
|
출원인 / 주소 |
- Industrial Technology Research Institute
|
대리인 / 주소 |
Thomas, Kayden, Horstemeyer & Risley
|
인용정보 |
피인용 횟수 :
4 인용 특허 :
9 |
초록
▼
A thermoelectric device at least includes a ring-shaped insulated substrate and plural sets of thermoelectric thin film material pair (TEP) disposed thereon. The ring-shaped insulated substrate has an inner rim, an outer rim and a first surface. The sets of TEP electrically connected to each other a
A thermoelectric device at least includes a ring-shaped insulated substrate and plural sets of thermoelectric thin film material pair (TEP) disposed thereon. The ring-shaped insulated substrate has an inner rim, an outer rim and a first surface. The sets of TEP electrically connected to each other are disposed on the first surface of the ring-shaped insulated substrate. Each set of TEP includes a P-type and an N-type thermoelectric thin film elements (TEE) electrically connected to each other. Also, the N-type TEE of each set is electrically connected to the P-type TEE of the adjacent set of TEP. When a current flows through the sets of TEP along a direction parallel to the surfaces of P-type and N-type thermoelectric thin film elements, a temperature difference is generated between the inner rim and the outer rim of the ring-shaped insulated substrate.
대표청구항
▼
What is claimed is: 1. A thermoelectric apparatus, at least comprising: a ring-shaped insulated substrate, having an inner rim, an outer rim, a top surface and a bottom surface, wherein the ring-shaped insulated substrate has a through hole vertically penetrating from the top surface to the bottom
What is claimed is: 1. A thermoelectric apparatus, at least comprising: a ring-shaped insulated substrate, having an inner rim, an outer rim, a top surface and a bottom surface, wherein the ring-shaped insulated substrate has a through hole vertically penetrating from the top surface to the bottom surface, and the inner rim abuts the through hole's sidewall, said through hole having an opening abutting the top surface; plural first sets of thermoelectric thin film material pair (TEP), the first sets of TEP disposed on the top surface of the ring-shaped insulated substrate and electrically connected to each other, each first set of TEP including a P-type thermoelectric thin film element (TEE) and an N-type TEE electrically connected to each other, and the N-type TEE of each first set of TEP electrically connected to the P-type TEE of the adjacent first set of TEP; and a first insulation layer, disposed on the top surface of the ring-shaped insulated substrate, and covering the first set of TEP and covering the opening of the through hole; wherein when a current flows through the first sets of TEP orderly along a direction parallel to the surfaces of P-type and N-type thermoelectric thin film elements, a temperature difference is generated between the inner rim and the outer rim of the ring-shaped insulated substrate. 2. The thermoelectric apparatus according to claim 1 further comprising: plural first conductors, disposed on the top surface and close to the inner rim of the ring-shaped insulated substrate, and each first conductor electrically connecting the P-type TEE and the N-type TEE of each first set of TEP; and plural second conductors, disposed on the top surface and close to the outer rim of the ring-shaped insulated substrate, and each second conductor electrically connecting the N-type TEE of the first set of TEP and the P-type TEE of the adjacent first set of TEP. 3. The thermoelectric apparatus according to claim 2 further comprising: a first conductive wire, electrically connecting the P-type TEE of the first set of TEP arranged in a first position; and a second conductive wire, electrically connecting the N-type TEE of the first set of TEP arranged in a last position. 4. The thermoelectric apparatus according to claim 2 further comprising: plural second sets of thermoelectric thin film material pair (TEP), the second sets of TEP disposed on the bottom surface of the ring-shaped insulated substrate and electrically connected to each other, each second set of TEP including a P-type thermoelectric thin film element (TEE) and an N-type TEE electrically connected to each other, and the N-type TEE of each second set of TEP electrically connected to the P-type TEE of the adjacent second set of TEP; and a second insulation layer, disposed on the bottom surface of the ring-shaped insulated substrate and covering the second set of TEP. 5. The thermoelectric apparatus according to claim 4 further comprising: plural third conductors, disposed on the bottom surface and close to the inner rim of the ring-shaped insulated substrate, and each third conductor electrically connecting the P-type TEE and the N-type TEE of each second set of TEP; and plural fourth conductors, disposed on the bottom surface and close to the outer rim of the ring-shaped insulated substrate, and each fourth conductor electrically connecting the N-type TEE of the second set of TEP and the P-type TEE of the adjacent second set of TEP. 6. The thermoelectric apparatus according to claim 4, wherein the through hole further vertically penetrates the second insulation layer. 7. The thermoelectric apparatus according to claim 6, wherein a first heat conduction module contacts the inner rim of the ring-shaped insulated substrate by the through hole, and a second heat conduction module contacts the outer rim of the ring-shaped insulated substrate. 8. The thermoelectric apparatus according to claim 7, wherein an outer surface of the second heat conduction module includes several fins. 9. The thermoelectric apparatus according to claim 7, wherein when a current flows through the first and second sets of TEE orderly in a direction parallel to the surfaces of the P-type TEE and the N-type TEE, a heat conduction direction between the first and second heat conduction modules is perpendicular to the current flow direction. 10. The thermoelectric apparatus according to claim 1, wherein each of the P-type thermoelectric thin film elements (TEE) and the N-type TEE has a thickness of 10 nm to 200 μm. 11. The thermoelectric apparatus according to claim 1, wherein a penetrating direction of the through hole is perpendicular to the first sets of TEP which are flatly formed on the top surface of the ring-shaped insulated substrate. 12. The thermoelectric apparatus according to claim 1, wherein the bottom surfaces of the first sets of TEP entirely contact the top surface of ring-shaped insulated substrate. 13. The thermoelectric apparatus according to claim 2, the bottom surfaces of the first and second conductors entirely contact the top surface of ring-shaped insulated substrate. 14. A thermoelectric stack with thermoelectric thin film elements, at least comprising: a first thermoelectric device, comprising: a first ring-shaped insulated substrate, having an inner rim, an outer rim, a top surface and a bottom surface; and plural first sets of thermoelectric thin film material pair (TEP), the first sets of TEP disposed on the top surface of the ring-shaped insulated substrate and electrically connected to each other, each first set of TEP including a P-type thermoelectric thin film element (TEE) and an N-type TEE electrically connected to each other, and the N-type TEE of each first set of TEP electrically connected to the P-type TEE of the adjacent first set of TEP; a first insulation layer, disposed on the top surface of the ring-shaped insulated substrate, and covering the first set of TEP; a second thermoelectric device, comprising: a second ring-shaped insulated substrate, having an inner rim, an outer rim, a top surface and a bottom surface; and plural second sets of thermoelectric thin film material pair (TEP), the second sets of TEP disposed on the top surface of the second ring-shaped insulated substrate and electrically connected to each other, each second set of TEP including a P-type thermoelectric thin film element (TEE) and an N-type TEE electrically connected to each other, and the N-type TEE of each second set of TEP electrically connected to the P-type TEE of the adjacent second set of TEP; a second insulation layer, disposed between the first thermoelectric device and the second thermoelectric device; a third insulation layer, disposed on the bottom surface of the second ring-shaped insulated substrate of the second thermoelectric device; and a through hole, vertically penetrating the first thermoelectric device, the second insulation layer, the second thermoelectric device and the third insulation layer of the thermoelectric stack, wherein the inner rims of the first and second ring-shaped insulated substrates abut the through hole's sidewall, said through hole having an opening abutting the top surface of said first ring-shaped insulated substrate, and wherein the first insulation layer covers the opening of the through hole; wherein the first thermoelectric device is vertically stacked above the second thermoelectric device, when a current flows through the first and second sets of TEP orderly along a direction parallel to the surfaces of P-type and N-type thermoelectric thin film elements, a temperature difference is generated between the inner rim and the outer rim of the first and second ring-shaped insulated substrates. 15. The thermoelectric stack according to claim 14, wherein the first thermoelectric device further comprises: plural first conductors, disposed on the top surface and close to the inner rim of the first ring-shaped insulated substrate, and each first conductor electrically connecting the P-type TEE and the N-type TEE of each first set of TEP; and plural second conductors, disposed on the top surface and close to the outer rim of the first ring-shaped insulated substrate, and each second conductor electrically connecting the N-type TEE of the first set of TEP and the P-type TEE of the adjacent first set of TEP. 16. The thermoelectric stack according to claim 14, wherein the first thermoelectric device further comprises: plural third sets of thermoelectric thin film material pair (TEP), the third sets of TEP disposed on the bottom surface of the first ring-shaped insulated substrate and electrically connected to each other, each third set of TEP including a P-type thermoelectric thin film element (TEE) and an N-type TEE electrically connected to each other, and the N-type TEE of each third set of TEP electrically connected to the P-type TEE of the adjacent third set of TEP. 17. The thermoelectric stack according to claim 16, wherein the second thermoelectric device further comprises: plural fourth sets of thermoelectric thin film material pair (TEP), the fourth sets of TEP disposed on the bottom surface of the second ring-shaped insulated substrate and electrically connected to each other, each fourth set of TEP including a P-type thermoelectric thin film element (TEE) and an N-type TEE electrically connected to each other, and the N-type TEE of each fourth set of TEP electrically connected to the P-type TEE of the adjacent fourth set of TEP. 18. The thermoelectric stack according to claim 14, wherein the through hole vertically penetrates the first and second ring-shaped insulated substrates, and a penetrating direction of the through hole is perpendicular to the first sets of TEP and the second sets of TEP, which the first and second sets of TEP are flatly formed on the top surfaces of the first and second ring-shaped insulated substrates respectively. 19. The thermoelectric stack according to claim 18, wherein a first heat conduction module contacts the inner rims of the first and second ring-shaped insulated substrates by the through hole, and a second heat conduction module contacts the outer rims of the first and second ring-shaped insulated substrates. 20. The thermoelectric stack according to claim 19, wherein an outer surface of the second heat conduction module includes several fins. 21. The thermoelectric stack according to claim 19, wherein when a current flows through the first and second sets of TEE orderly in a direction parallel to the surfaces of the P-type TEE and the N-type TEE, a heat conduction direction between the first and second heat conduction modules is perpendicular to the current flow direction. 22. The thermoelectric stack according to claim 14, wherein each of the P-type thermoelectric thin film elements (TEE) and the N-type TEE has a thickness of 10 nm to 200 μm. 23. The thermoelectric stack according to claim 14, wherein the bottom surfaces of the first sets of TEP entirely contact the top surface of first ring-shaped insulated substrate, the bottom surfaces of the second sets of TEP entirely contact the top surface of second ring-shaped insulated substrate. 24. The thermoelectric stack according to claim 15, wherein the bottom surfaces of the first and second conductors entirely contact the top surface of first ring-shaped insulated substrate.
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