초록 ▼

An integrated power device module including a lead frame having first and second spaced pads, one or more common source-drain leads located between the first and second pads, and one or more drain leads located on the outside of the second pad. First and second transistors are flip chip attached res

An integrated power device module including a lead frame having first and second spaced pads, one or more common source-drain leads located between the first and second pads, and one or more drain leads located on the outside of the second pad. First and second transistors are flip chip attached respectively to the first and second pads, wherein the source of the second transistor is electrically connected to the one or more common source-drain leads. A first clip is attached to the drain of the first transistor and electrically connected to the one or more common source-drain leads. A second clip is attached to the drain of the second transistor and electrically connected to the one or more drain leads located on the outside of the second pad. Molding material encapsulates the lead frame, the transistors, and the clips to form the module.

대표청구항 ▼

The invention claimed is: 1. An integrated transistor module comprising: a planar lead frame having first and second spaced pads and one or more common source-drain leads located between said first and second pads; first and second transistors each having source, gate and drain electrodes, attached

The invention claimed is: 1. An integrated transistor module comprising: a planar lead frame having first and second spaced pads and one or more common source-drain leads located between said first and second pads; first and second transistors each having source, gate and drain electrodes, attached respectively to top surfaces of said first and second pads, wherein the source electrode of said second transistor is electrically connected to said one or more common source-drain leads; and a first clip having a planar member and a plurality of downwardly extending leads attached to the drain electrode of said first transistor and electrically connected to said one or more common source-drain leads; wherein said lead frame, said transistors and said first clip are partially encapsulated in molding material, with a portion of bottom surfaces of each of said first and second pads and said planar member of said clip being exposed to provide dual cooling of said module. 2. The module of claim 1 wherein said first and second transistors are metal oxide semiconductor field effect transistors (MOSFET). 3. The module of claim 1 wherein said first and second transistors are respectively high side and low side power transistors that are components of a buck converter. 4. The module of claim 1 wherein said lead frame includes one or more drain leads located on the outside of said second pad, and including a second clip attached to the drain of said second transistor and electrically connected to said one or more drain leads located on the outside of said second pad. 5. The module of claim 1 wherein said lead frame, said transistors and said clip are partially encapsulated in molding material, with the pads of the lead frame and the clip being exposed to provide dual cooling of said module. 6. An integrated transistor module comprising: a planar lead frame having first and second spaced pads, one or more common source-drain leads located between said first and second pads, and one or more drain leads located on the outside of said second pad; first and second transistors attached respectively to top surfaces of said first and second pads, wherein the source of said second transistor is electrically connected to said one or more common source-drain leads; a first clip having a planar member and a plurality of downwardly extending leads attached to the drain of said first transistor and electrically connected to said one or more common source-drain leads; a second clip attached to the drain of said second transistor and electrically connected to said one or more drain leads located on the outside of said second pad; and molding material partially encapsulating said lead frame, said transistors, and said clips to form said module with a portion of the bottom surfaces of each of said first and second pads and both said planar member of said clip being exposed to provide dual cooling of said module. 7. The module of claim 6 wherein said first and second transistors are metal oxide semiconductor field effect transistors (MOSFET). 8. The module of claim 6 wherein said first and second transistors are respectively high side and low side power transistors that are components of a buck converter. 9. The module of claim 6 wherein said one or more common source-drain leads are configured to be cut so that two individual single transistor packages can be formed. 10. The module of claim 6 wherein said lead frame has a gate lead between said first and second pads and wherein said first clip is not electrically attached to said gate lead. 11. The module of claim 6 wherein said second clip has a planar member and a plurality of downwardly extending leads that are electrically connected to said one or more drain leads of said lead frame located on the outside of said second pad. 12. The module of claim 11 wherein said lead frame has a gate lead between said first and second pads and wherein said first clip has no downwardly extending lead to be electrically connected to said gate lead. 13. The module of claim 6 wherein said lead frame is configured to have a leaded footprint which can be converted to a leadless module by cutting off the lead portion of the module. 14. The module of claim 6 wherein said common source drain leads are partially severed to disconnect the connection, and wherein a common heat sink is attached to and connects said first and second clips. 15. The module of claim 6 including an integrated circuit attached to said lead frame and electrically connected to said first and second transistors, said integrated circuit being encapsulated by said molding material to form a single module. 16. An integrated transistor module comprising: a planar lead frame having first and second spaced source pads, one or more common source-drain leads located between said first and second source pads, and one or more drain leads located on the outside of said second pad; first and second transistors each with a source electrode on one surface and a drain electrode on the other surface, said first and second source electrodes attached respectively to surfaces of said first and second source pads, wherein the source of said second transistor is electrically connected to said one or more common source-drain leads; a first drain clip having a planar member attached to the drain electrode of said first transistor and a plurality of downwardly extending leads electrically connected to said one or more common source-drain leads; a second drain clip having a planar member attached to the drain electrode of said second transistor and one or more drain leads extending from the planar member and located on the outside of said second pad; and molding material partially encapsulating said lead frame, said transistors, and said clips to form said module with a portion of the bottom surfaces of each of said first and second source pads and both said planar member of said drain clip being exposed to provide dual cooling of said module.