Semiconductor substrate and method for manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/30
출원번호
UP-0155338
(2008-06-03)
등록번호
US-7781306
(2010-09-13)
우선권정보
JP-2007-162106(2007-06-20)
발명자
/ 주소
Kakehata, Tetsuya
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
7인용 특허 :
15
초록▼
A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and
A semiconductor device and a method for manufacturing thereof are provided. The method includes a step of forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate, a step of forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film, a step of irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate, a step of irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, and a step of performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate.
대표청구항▼
What is claimed is: 1. A method for manufacturing a semiconductor substrate comprising the steps of: forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate; forming a second insulating film containing silicon and nitrogen as it
What is claimed is: 1. A method for manufacturing a semiconductor substrate comprising the steps of: forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate; forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film; irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate; irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, wherein the second ions are halogen ions; forming a bonding layer over the second insulating film; bonding the single-crystal semiconductor substrate and a supporting substrate with the bonding layer interposed therebetween; and performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate, and accordingly the halogen is contained in the single-crystal semiconductor film. 2. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first insulating film containing silicon and oxygen as its composition is a thermal oxide film. 3. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first insulating film containing silicon and oxygen as its composition is a silicon oxide film or a silicon oxynitride film. 4. The method for manufacturing a semiconductor substrate according to claim 1, wherein the second insulating film containing silicon and nitrogen as its composition is a silicon nitride film or a silicon nitride oxide film. 5. The method for manufacturing a semiconductor substrate according to claim 1, wherein the halogen is fluorine or chlorine. 6. The method for manufacturing a semiconductor substrate according to claim 1, wherein the bonding layer is a silicon oxide film or a film having siloxane bonds. 7. The method for manufacturing a semiconductor substrate according to claim 1, wherein the bonding layer is a silicon oxide film, and wherein the silicon oxide film is formed by a chemical vapor deposition method, using organic silane or inorganic silane as a source gas. 8. The method for manufacturing a semiconductor substrate according to claim 1, wherein the supporting substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a ceramic substrate, a sapphire substrate, and a metal substrate whose surface is coated with an insulating film. 9. The method for manufacturing a semiconductor substrate according to claim 1, wherein a second bonding layer and a barrier film are provided over the supporting substrate. 10. A method for manufacturing a semiconductor substrate comprising the steps of: forming a first insulating film containing silicon and oxygen as its composition over a single-crystal semiconductor substrate; forming a second insulating film containing silicon and nitrogen as its composition over the first insulating film; irradiating the second insulating film with first ions to form a separation layer in the single-crystal semiconductor substrate; irradiating the second insulating film with second ions so that halogen is contained in the first insulating film, wherein the second ions are halogen ions; forming a bonding layer over the second insulating film; bonding the single-crystal semiconductor substrate and a supporting substrate with the bonding layer interposed therebetween; and performing heat treatment to separate the single-crystal semiconductor substrate with a single-crystal semiconductor film left over the supporting substrate, and accordingly the halogen is contained in the single-crystal semiconductor film, wherein the heat treatment is performed at a temperature of greater than or equal to 550° C. and less than or equal to the strain point of the supporting substrate. 11. The method for manufacturing a semiconductor substrate according to claim 10, wherein the first insulating film containing silicon and oxygen as its composition is a thermal oxide film. 12. The method for manufacturing a semiconductor substrate according to claim 10, wherein the first insulating film containing silicon and oxygen as its composition is a silicon oxide film or a silicon oxynitride film. 13. The method for manufacturing a semiconductor substrate according to claim 10, wherein the second insulating film containing silicon and nitrogen as its composition is a silicon nitride film or a silicon nitride oxide film. 14. The method for manufacturing a semiconductor substrate according to claim 10, wherein the halogen is fluorine or chlorine. 15. The method for manufacturing a semiconductor substrate according to claim 10, wherein the bonding layer is a silicon oxide film or a film having siloxane bonds. 16. The method for manufacturing a semiconductor substrate according to claim 10, wherein the bonding layer is a silicon oxide film, and wherein the silicon oxide film is formed by a chemical vapor deposition method, using organic silane or inorganic silane as a source gas. 17. The method for manufacturing a semiconductor substrate according to claim 10, wherein the supporting substrate is one selected from the group consisting of a glass substrate, a quartz substrate, a ceramic substrate, a sapphire substrate, and a metal substrate whose surface is coated with an insulating film. 18. The method for manufacturing a semiconductor substrate according to claim 10, wherein a second bonding layer and a barrier film are provided over the supporting substrate.
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