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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | UP-0240189 (2005-09-30) |
| 등록번호 | US-7781326 (2010-09-13) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 0 인용 특허 : 253 |
A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitr
A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.
The invention claimed is: 1. A method for forming a material on a substrate, comprising: positioning a substrate within a plasma-enhanced process chamber; forming a tantalum nitride layer having a first nitrogen concentration by sequentially exposing the substrate to a tantalum precursor and a nitr
The invention claimed is: 1. A method for forming a material on a substrate, comprising: positioning a substrate within a plasma-enhanced process chamber; forming a tantalum nitride layer having a first nitrogen concentration by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor during an atomic layer deposition process; reducing the first nitrogen concentration of the tantalum nitride layer to a second nitrogen concentration by exposing the substrate to a plasma annealing process comprising a plasma substantially formed from a gas non-chemically reactive with respect to the tantalum nitride layer; and depositing a metal-containing layer on the tantalum nitride layer. 2. The method of claim 1, wherein the nitrogen precursor is a plasma nitrogen precursor. 3. The method of claim 2, wherein a plasma is ignited by an electric field during the atomic layer deposition process. 4. The method of claim 2, wherein a plasma is ignited by a radio frequency field during the atomic layer deposition process. 5. The method of claim 1, wherein the nitrogen precursor contains a compound selected from the group consisting of nitrogen, ammonia, hydrazine, plasmas thereof, derivatives thereof and combinations thereof. 6. The method of claim 5, wherein the metal-containing layer comprises a metal selected from the group consisting of aluminum, copper, tungsten, tantalum and alloys thereof. 7. The method of claim 6, wherein the metal is copper deposited by an electroplating process. 8. The method of claim 7, wherein the tantalum nitride layer has a thickness within a range from about 10 Å to about 50 Å. 9. A method for forming a material on a substrate, comprising: positioning a substrate within a plasma-enhanced process chamber; forming a tantalum nitride layer having a first nitrogen concentration on the substrate by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor during an atomic layer deposition process; plasma annealing the tantalum nitride layer by a plasma substantially formed from a gas non-chemically reactive with respect to the tantalum nitride layer to reduce the first nitrogen concentration of the tantalum nitride layer to a second nitrogen concentration; forming a metal-containing layer on the tantalum nitride layer; and forming a copper-containing layer or a tungsten-containing layer on the metal-containing layer. 10. The method of claim 9, wherein the nitrogen precursor is a plasma nitrogen precursor. 11. The method of claim 10, wherein a plasma is ignited by an electric field during the atomic layer deposition process. 12. The method of claim 10, wherein a plasma is ignited by a radio frequency field during the atomic layer deposition process. 13. The method of claim 9, wherein the nitrogen precursor contains a compound selected from the group consisting of nitrogen, ammonia, hydrazine, plasmas thereof, derivatives thereof and combinations thereof. 14. The method of claim 13, wherein the metal-containing layer comprises copper or tungsten. 15. The method of claim 14, wherein the metal-containing layer comprises copper deposited by an electroplating process. 16. The method of claim 15, wherein the tantalum nitride layer has a thickness within a range from about 10 Å to about 50 Å. 17. The method of claim 13, wherein the copper-containing layer is formed during a physical vapor deposition process or an electroplating process. 18. The method of claim 13, wherein the tungsten-containing layer is formed during a physical vapor deposition process or a chemical vapor deposition process. 19. A method for forming a material on a substrate, comprising: positioning a substrate within a process chamber; forming a tantalum-containing layer on the substrate; forming a tantalum nitride layer on the tantalum-containing layer having a first nitrogen concentration by sequentially exposing the substrate to a tantalum precursor and a plasma nitrogen precursor during an atomic layer deposition process; exposing the substrate to a plasma annealing process comprising a plasma substantially formed from a gas non-chemically reactive with respect to the tantalum nitride layer to reduce the first nitrogen concentration of the tantalum nitride layer to a second nitrogen concentration; and forming a metal-containing layer on the tantalum nitride layer. 20. The method of claim 19, wherein the plasma nitrogen precursor is ignited by an electric field during the atomic layer deposition process. 21. The method of claim 19, wherein the plasma nitrogen precursor is ignited by a radio frequency field during the atomic layer deposition process. 22. The method of claim 19, wherein the plasma nitrogen precursor contains a compound selected from a group consisting of nitrogen, ammonia, hydrazine, derivatives thereof and combinations thereof. 23. The method of claim 22, wherein the metal-containing layer comprises a metal selected from the group consisting of aluminum, copper, tungsten, tantalum and alloys thereof. 24. The method of claim 23, wherein the metal is copper deposited by an electroplating process. 25. The method of claim 24, wherein the tantalum nitride layer has a thickness within a range from about 10 Å to about 50 Å. 26. A method for forming a material on a substrate, comprising: positioning a substrate on an pedestal within a process chamber; forming a tantalum-containing layer on the substrate; generating an electric field above the substrate during a plasma-enhanced atomic layer deposition process to form a tantalum nitride layer having a first nitrogen concentration on the tantalum-containing layer; exposing the substrate tantalum-containing layer to a plasma annealing process comprising a plasma substantially formed from a gas non-chemically reactive with respect to the tantalum-containing layer to reduce the first nitrogen concentration of the tantalum nitride layer to a second nitrogen concentration; and forming a metal-containing layer on the tantalum nitride layer. 27. The method of claim 26, wherein the plasma-enhanced atomic layer deposition process contains sequentially exposing the substrate to a tantalum precursor and a nitrogen plasma precursor. 28. The method of claim 27, wherein the nitrogen plasma precursor is formed from a nitrogen precursor selected from the group consisting of nitrogen, ammonia, hydrazine, derivatives thereof and combinations thereof. 29. The method of claim 28, wherein the metal-containing layer comprises a metal selected from the group consisting of aluminum, copper, tungsten, tantalum and alloys thereof. 30. The method of claim 29, wherein the metal is copper deposited by an electroplating process. 31. The method of claim 30, wherein the tantalum nitride layer has a thickness within a range from about 10 Å to about 50 Å. 32. The method of claim 1, wherein the non-chemically reactive gas is selected from at least one of Ar, Ne, Xe, He, or H2. 33. The method of claim 1, wherein reducing the first nitrogen concentration of the tantalum nitride layer to the second nitrogen concentration by exposing the substrate to the plasma annealing process further comprises sputtering off nitrogen. 34. The method of claim 9, wherein reducing the first nitrogen concentration of the tantalum nitride layer to the second nitrogen concentration by exposing the substrate to the plasma annealing process further comprises sputtering off nitrogen. 35. The method of claim 19, wherein reducing the first nitrogen concentration of the tantalum nitride layer to the second nitrogen concentration by exposing the substrate to the plasma annealing process further comprises sputtering off nitrogen. 36. The method of claim 26, wherein reducing the first nitrogen concentration of the tantalum nitride layer to the second nitrogen concentration by exposing the substrate to the plasma annealing process further comprises sputtering off nitrogen.
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