초록 ▼

A substrate treatment method which includes a developing step of developing a resist film on a substrate to form a resist pattern on the substrate, and thereafter includes an etching step of etching a base film using the resist pattern as a mask. The substrate treatment method, between the developin

A substrate treatment method which includes a developing step of developing a resist film on a substrate to form a resist pattern on the substrate, and thereafter includes an etching step of etching a base film using the resist pattern as a mask. The substrate treatment method, between the developing step and the etching step, supplies a fluorine-based liquid to the resist pattern to form a protection film with a high fluorine density on a surface of the resist pattern.

대표청구항 ▼

What is claimed is: 1. A substrate treatment method comprising: developing a resist film on a substrate to form a resist pattern on the substrate; heat-processing the resist film after the developing; and thereafter, etching a base film using the resist pattern as a mask, wherein said method compri

What is claimed is: 1. A substrate treatment method comprising: developing a resist film on a substrate to form a resist pattern on the substrate; heat-processing the resist film after the developing; and thereafter, etching a base film using the resist pattern as a mask, wherein said method comprises, between said heat-processing step and said etching step, supplying a fluorine-based liquid to the heat processed resist pattern to form a protection film with a high fluorine density on a surface of the resist pattern. 2. The substrate treatment method as set forth in claim 1, wherein the fluorine-based liquid is composed of a compound with a molecular weight of 50 or more. 3. The substrate treatment method as set forth in claim 1, wherein the fluorine-based liquid contains an OH group. 4. The substrate treatment method as set forth in claim 1, further comprising: between said developing and said etchin, supplying another liquid containing an OH group to the resist pattern. 5. The substrate treatment method as set forth in claim 4, wherein said supplying another liquid containing an OH group is performed before said supplying the fluorine-based liquid. 6. The substrate treatment method as set forth in claim 4, wherein said supplying another liquid containing an OH group is performed simultaneously with said supplying the fluorine-based liquid. 7. The substrate treatment method as set forth in claim 4, wherein the temperature of the fluorine-based liquid is set to be higher than room temperature, and the temperature of the other liquid containing an OH group is set to be lower than the temperature of fluorine-based liquid. 8. The substrate treatment method as set forth in claim 4, wherein the other liquid containing an OH group is a surfactant. 9. The substrate treatment method as set forth in claim 1, further comprising: supplying energy to the resist pattern to which the fluorine-based liquid has been supplied and thereby accelerating the reaction of the fluorine-based liquid with the surface of the resist pattern. 10. The substrate treatment method as set forth in claim 9, wherein said accelerating the reaction of the fluorine-based liquid with the surface of the resist pattern is performed by heating the substrate. 11. The substrate treatment method as set forth in claim 9, wherein said accelerating the reaction of the fluorine-based liquid with the surface of the resist pattern is performed by applying an ultraviolet ray to the substrate. 12. The substrate treatment method as set forth in claim 1, further comprising: after said developing and before said supplying a fluorine-based liquid, oxidizing the surface of the resist pattern. 13. The substrate treatment method as set forth in claim 12, wherein said oxidizing the surface of the resist pattern is performed by applying an ultraviolet ray to the substrate with the substrate being maintained in an atmosphere containing an oxygen gas.