초록 ▼

Some embodiments include methods of forming dispersions of nanoparticles. The nanoparticles are incorporated into first coordination complexes in which the nanoparticles are coordinated to hydrophobic ligands, and the first coordination complexes are dispersed within a non-polar solvent. While the f

Some embodiments include methods of forming dispersions of nanoparticles. The nanoparticles are incorporated into first coordination complexes in which the nanoparticles are coordinated to hydrophobic ligands, and the first coordination complexes are dispersed within a non-polar solvent. While the first coordination complexes are within the non-polar solvent, the ligands are reacted with one or more reactants to convert the first coordination complexes into second coordination complexes that contain hydrophilic ligands. The second coordination complexes are then extracted from the non-polar solvent into water, to form a mixture of the second coordination complexes and the water. In some embodiments, the mixture may be dispersed across a semiconductor substrate to form a uniform distribution of the nanoparticles across the substrate. In some embodiments, the nanoparticles may then be incorporated into flash memory devices as charge-trapping centers.

대표청구항 ▼

I claim: 1. A method of forming a dispersion of nanoparticles, comprising: incorporating the nanoparticles into first coordination complexes comprising the nanoparticles coordinated to ligands with relatively low water solubility; the first coordination complexes being dispersed within a non-polar

I claim: 1. A method of forming a dispersion of nanoparticles, comprising: incorporating the nanoparticles into first coordination complexes comprising the nanoparticles coordinated to ligands with relatively low water solubility; the first coordination complexes being dispersed within a non-polar solvent; the nanoparticles comprising one or more of transition metal, silicon and germanium; while the first coordination complexes are within the non-polar solvent, and while the ligands remain coordinated with the nanoparticles, reacting the ligands with one or more reactants to increase the water solubility of the ligands without severing coordination of the nanoparticles to the ligands and thereby to convert the first coordination complexes into second coordination complexes having relatively high water solubility and including the nanoparticles coordinated to the reacted ligands; and extracting the second coordination complexes from the non-polar solvent into water. 2. The method of claim 1 wherein: the ligands comprise a head which coordinates with the nanoparticles, comprise a chain of at least five carbon atoms extending from the head, and comprise a carbon-carbon double bond joined to the head through the chain of at least five carbon atoms; and the reacting comprises oxidation of the carbon-carbon double bonds to cleave the carbon-carbon double bonds and replace them with acid groups joined to the heads of the ligands through the chains of at least five carbon atoms. 3. The method of claim 2 wherein: the ligands comprise oleic acid; and the reacting converts at least some of the oleic acid to azelaic acid. 4. The method of claim 1 wherein: the ligands comprise a head which coordinates with the nanoparticles, comprise a chain of at least five carbon atoms extending from the head, and comprise an ester joined to the head through the chain of at least five carbon atoms; and the reacting comprises cleavage of the ester. 5. The method of claim 4 wherein the cleavage converts the ester to a carboxylic acid. 6. The method of claim 4 wherein the cleavage is accompanied by replacement of a relatively hydrophobic component of the ester with a relatively hydrophilic component. 7. The method of claim 6 wherein the relatively hydrophilic component is a polyol. 8. A method of forming a dispersion of nanoparticles, comprising: incorporating the nanoparticles into first coordination complexes comprising the nanoparticles coordinated to unsaturated aliphatic carboxylic acids, with the unsaturation occurring at delta-6 or higher; the nanoparticles comprising one or more of transition metal, silicon and germanium; while the first coordination complexes are within a non-polar solvent, and while the ligands remain coordinated with the nanoparticles, oxidatively cleaving the ligands along the unsaturation to thereby convert the first coordination complexes into second coordination complexes having relatively high water solubility; and extracting the second coordination complexes from the non-polar solvent into water. 9. The method of claim 8 wherein the oxidative cleaving comprises exposing the ligands to ozone. 10. The method of claim 8 wherein: the ligands comprise oleic acid; and the oxidative cleaving converts the at least some of the oleic acid to azelaic acid. 11. A method of semiconductor processing, comprising: dispersing first coordination complexes within a non-polar solvent; the first coordination complexes comprising nanoparticles coordinated to hydrophobic ligands; the nanoparticles comprising one or more of transition metal, silicon and germanium; while the coordination complexes are within the non-polar solvent, and while the ligands remain coordinated with the nanoparticles, reacting the ligands with one or more reactants to increase the water solubility of the ligands and thereby convert the first coordination complexes into second coordination complexes having hydrophilic ligands; extracting the second coordination complexes from the non-polar solvent into water to form a mixture of the second coordination complexes and water; and dispersing the mixture across at least a portion of a semiconductor substrate. 12. The method of claim 11 further comprising, after dispersing the mixture across said at least a portion of the semiconductor substrate, removing the water from over the semiconductor substrate to leave the second coordination complexes dispersed across said at least a portion of the semiconductor substrate. 13. The method of claim 12 further comprising after removing the water, oxidizing the ligands of the second coordination complexes over the semiconductor substrate to remove the ligands and leave the nanoparticles dispersed across said at least a portion of the semiconductor substrate. 14. A method of forming a flash memory cell, comprising: forming first complexes that contain nanoparticles coordinated to organic ligands having relatively low water solubility; while the first complexes are within a non-polar solvent, chemically modifying the ligands to increase the water solubility of the ligands and thereby convert the first coordination complexes into second coordination complexes having relatively high water solubility; transferring the second coordination complexes from the non-polar solvent to water to form a mixture of the second coordination complexes and water; dispersing the mixture across a gate dielectric material supported by a semiconductor substrate; after the mixture is dispersed across the gate dielectric, removing the water from the mixture to leave the nanoparticles as charge-trapping centers over the gate dielectric; forming a charge-blocking material over the charge-trapping centers; and forming a control gate over the charge-blocking material. 15. The method of claim 14 further comprising, after dispersing the mixture across the gate dielectric, oxidizing the ligands of the second coordination complexes to remove the ligands. 16. The method of claim 14 wherein the nanoparticles comprise one or more transition metals. 17. The method of claim 14 wherein the nanoparticles comprise one or more of silicon, germanium, palladium, platinum, nickel and cobalt. 18. The method of claim 14 wherein the nanoparticles consist of palladium, platinum, nickel or cobalt. 19. The method of claim 14 wherein: the ligands comprise a head which coordinates with the nanoparticles, comprise a chain of at least five carbon atoms extending from the head, and comprise a carbon-carbon double bond joined to the head through the chain of at least five carbon atoms; and the converting comprises oxidation of the carbon-carbon double bonds to cleave the carbon-carbon double bonds and replace them with acid groups joined to the heads of the ligands through the chains of at least five carbon atoms. 20. The method of claim 19 wherein: the ligands comprise oleic acid; and the converting converts at least some of the oleic acid to azelaic acid. 21. The method of claim 14 wherein: the ligands comprise a head which coordinates with the nanoparticles, comprise a chain of at least five carbon atoms extending from the head, and comprise an ester joined to the head through the chain of at least five carbon atoms; and the converting comprises cleavage of the ester. 22. The method of claim 21 wherein the cleavage converts the ester to a carboxylic acid. 23. The method of claim 21 wherein the cleavage is accompanied by replacement of a relatively hydrophobic component of the ester with a relatively hydrophilic component. 24. A method of forming a flash memory cell, comprising: forming first complexes that contain nanoparticles coordinated to organic ligands having relatively low water solubility; the organic ligands being unsaturated aliphatic carboxylic acids with the unsaturation occurring at delta-6 or higher; while the first coordination complexes are within a non-polar solvent, and while the ligands remain coordinated with the nanoparticles, oxidatively cleaving the ligands along the unsaturation to thereby convert the first coordination complexes into second coordination complexes having relatively high water solubility; transferring the second coordination complexes from the non-polar solvent to water to form a mixture of the second coordination complexes and water; dispersing the mixture across a gate dielectric material supported by a semiconductor substrate; after the mixture is dispersed across the gate dielectric, removing the water from the mixture to leave the nanoparticles as charge-trapping centers over the gate dielectric; forming electrically insulative material over the charge-trapping centers; and forming electrically conductive material over the electrically insulative material; the gate dielectric, charge-trapping centers, electrically insulative material and electrically conductive material together being comprised by the flash memory cell. 25. The method of claim 24 wherein: the nanoparticles comprise one or more of silicon, germanium, palladium, platinum, nickel and cobalt; the ligands comprise oleic acid; and the oxidative cleaving converts the at least some of the oleic acid to azelaic acid.