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An imager temperature sensor and a current correction apparatus are provided which use dark pixel measurements from an imager chip during operation together with a fabrication process constant as well as a chip dependent constant to calculate chip temperature. The chip temperature may be used to gen

An imager temperature sensor and a current correction apparatus are provided which use dark pixel measurements from an imager chip during operation together with a fabrication process constant as well as a chip dependent constant to calculate chip temperature. The chip temperature may be used to generate a current correction signal. The correction signal is used to tune a current on the imager chip to correct for temperature variations.

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What is claimed as new and desired to be protected by Letters Patent of the United States is: 1. An imager device comprising: a pixel array formed on an imaging chip and comprising at least one pixel providing a dark current signal; and a circuit configured to provide a representation of temperatur

What is claimed as new and desired to be protected by Letters Patent of the United States is: 1. An imager device comprising: a pixel array formed on an imaging chip and comprising at least one pixel providing a dark current signal; and a circuit configured to provide a representation of temperature according to said dark current signal, a fabrication process dependent parameter, and an imaging chip dependent value. 2. An imager device of claim 1 wherein said chip dependent value is a value based on a pixel reference dark current value taken at a reference temperature. 3. An imager device of claim 1 further comprising a storage device for storing said chip dependent value on said imager. 4. An imager device of claim 2 further comprising a storage device for storing said reference dark current value and said reference temperature. 5. An imager device of claim 1 further comprising a plurality of said pixels supplying dark current signals which are selectively used to provide a plurality of said temperature representations, each dark current signal being associated with at least one circuit used on said imager. 6. An imager device of claim 1 wherein said fabrication process dependent parameter is a value associated with a plurality of imaging chips produced by the same fabrication process. 7. An imager device comprising: a pixel array formed on an imaging chip and comprising at least one pixel providing a dark current signal; and a circuit configured to provide a representation of at least one of a temperature of said chip and a temperature of a portion of said chip according to said dark current signal, a fabrication process dependent parameter and an imaging chip dependent value. 8. An imager device of claim 7 further comprising a circuit for determining a correction signal based on said temperature representation. 9. An imager device of claim 8 wherein said circuit for determining said correction signal is configured to output said correction signal to a correction circuit for correcting a current of said imager. 10. An imager device of claim 7 further comprising a plurality of pixels provided at spaced locations within said array respectively supplying dark current signals, at least one pixel at each of said spaced locations providing a respective dark current signal which is associated with a respective area of said imaging chip, said circuit configured to provide a separate temperature representation for each said area according to at least a respective one of said dark current signals. 11. An imager device of claim 7 wherein said at least one pixel provides a plurality of dark current signals, at least two of said dark current signals having different integration times from which a dark current value is derived, said circuit configured to provide said temperature representation according to said derived dark current value. 12. An imager device of claim 11 wherein said derived dark current value is derived from dark current signals from more than one pixel. 13. An imager device of claim 11, wherein said circuit derives said dark current value from said plurality of dark current signals in a manner which removes common noise components present in the respective dark, current signals. 14. An imager device of claim 7 wherein said fabrication process dependent parameter is a value associated with a plurality of imaging chips produced by the same fabrication process. 15. An imager device of claim 7 wherein said chip dependent value is a value based on a pixel reference dark current value taken at a reference temperature. 16. An imager device of claim 7 further comprising a storage device for storing said chip dependent value on said imaging chip. 17. An imager device of claim 7 further comprising a storage device for storing said process dependent value on said imaging chip. 18. An imager device of claim 15 further comprising a storage device for storing said reference dark current value and said reference temperature. 19. An imager device of claim 18 wherein said storage device is provided on said imaging chip. 20. An imager device comprising: a pixel array comprising a plurality of pixels, said pixels comprising at least one dark pixel for providing at least one dark current signal; a memory which stores values comprising a process dependent value and at least one other value related to a reference dark current signal measured at a reference temperature; and a circuit for calculating at least one temperature value based on a sensed dark current value, said process dependent value, and said at least one other value, wherein said sensed dark current value is based on said at least one dark pixel signal. 21. An imager device of claim 20 wherein said at least one other value related to a reference dark current signal is a chip dependent value. 22. An imager device of claim 20, further comprising a plurality of dark pixels for providing dark current signals, wherein said plurality of dark current signals have more than one integration time. 23. An imager device of claim 20 wherein, said process dependent value is related to temperature dependent dark current behavior of a plurality of imager chips containing said pixel array manufactured using similar manufacturing processes. 24. An imager device of claim 20 wherein said at least one other value is a imager chip dependent value related to at least a reference dark current and reference temperature for said imager. 25. An imager device comprising: means for providing at least one reference pixel signal; and means for determining at least one temperature value for said device based on said reference pixel signal, a fabrication process value, and at least one other value related to a reference pixel signal taken from said device at a reference temperature.