IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0216548
(2008-07-08)
|
등록번호 |
US-7790563
(2010-09-27)
|
우선권정보 |
JP-2007-184984(2007-07-13) |
발명자
/ 주소 |
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
4 인용 특허 :
18 |
초록
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A semiconductor device of the present invention is manufactured by the following steps: forming a single-crystal semiconductor layer over a substrate having an insulating surface; irradiating a region of the single-crystal semiconductor layer with laser light; forming a circuit of a pixel portion us
A semiconductor device of the present invention is manufactured by the following steps: forming a single-crystal semiconductor layer over a substrate having an insulating surface; irradiating a region of the single-crystal semiconductor layer with laser light; forming a circuit of a pixel portion using a region of the single-crystal semiconductor layer which is not irradiated with the laser light; and forming a driver circuit for driving the circuit of the pixel portion using the region of the single-crystal semiconductor layer which is irradiated with the laser light. Thus, a semiconductor device using a single-crystal semiconductor layer which is suitable for a peripheral driver circuit region and a single-crystal semiconductor layer which is suitable for a pixel region can be provided.
대표청구항
▼
What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming a single-crystal semiconductor layer over a substrate having an insulating surface, wherein the single-crystal semiconductor layer includes a first region and a second region; irradiating the first region w
What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming a single-crystal semiconductor layer over a substrate having an insulating surface, wherein the single-crystal semiconductor layer includes a first region and a second region; irradiating the first region with laser light; and forming a circuit of a pixel portion using the second region which is not irradiated with the laser light, and a driver circuit for driving the circuit of the pixel portion using the first region which is irradiated with the laser light. 2. The method for manufacturing a semiconductor device according to claim 1, wherein a light-emitting element is formed in the pixel portion. 3. A method for manufacturing a semiconductor device, comprising: forming a single-crystal semiconductor layer over a substrate having an insulating surface, wherein the single-crystal semiconductor layer includes a first region and a second region; performing a heat treatment on the single-crystal semiconductor layer; irradiating the first region with laser light after the heat treatment; and forming a circuit of a pixel portion using the second region which is not irradiated with the laser light, and a driver circuit for driving the circuit of the pixel portion using the first region which is irradiated with the laser light. 4. The method for manufacturing a semiconductor device according to claim 3, wherein a light-emitting element is formed in the pixel portion. 5. A method for manufacturing a semiconductor device, comprising: forming a damaged region at a predetermined depth from a surface of a single- crystal semiconductor substrate; forming a first insulating layer over the single-crystal semiconductor substrate; bonding the single-crystal semiconductor substrate to a substrate having an insulating surface with at least the first insulating layer interposed between the single- crystal semiconductor substrate and the substrate having an insulating surface; separating the single-crystal semiconductor substrate at the damaged region to form a single-crystal semiconductor layer over the substrate having an insulating surface, wherein the single-crystal semiconductor layer includes a first region and a second region; irradiating the first region with laser light; and forming a circuit of a pixel portion using the second region which is not irradiated with the laser light, and a driver circuit for driving the circuit of the pixel portion using the first region which is irradiated with the laser light. 6. The method for manufacturing a semiconductor device according to claim 5, wherein the first insulating layer is formed by a chemical vapor deposition method using an organic silane gas. 7. The method for manufacturing a semiconductor device according to claim 5, further comprising the step of forming a second insulating layer over the first insulating layer. 8. The method for manufacturing a semiconductor device according to claim 5, further comprising the step of forming a second insulating layer over the substrate having an insulating surface. 9. The method for manufacturing a semiconductor device according to claim 5, wherein the first insulating layer is formed after forming the damaged region. 10. The method for manufacturing a semiconductor device according to claim 5, wherein the damaged region is formed after forming the first insulating layer. 11. The method for manufacturing a semiconductor device according to claim 5, wherein the first insulating layer has a stacked-layer structure. 12. The method for manufacturing a semiconductor device according to claim 5, wherein the first insulating layer has a stacked-layer structure of a silicon oxynitride layer and a silicon nitride oxide layer; and wherein the silicon oxynitride layer is formed so as to be in contact with the single-crystal semiconductor substrate. 13. The method for manufacturing a semiconductor device according to claim 7, wherein the second insulating layer is formed by a chemical vapor deposition method using an organic silane gas. 14. The method for manufacturing a semiconductor device according to claim 8, wherein the second insulating layer is formed by a chemical vapor deposition method using an organic silane gas. 15. The method for manufacturing a semiconductor device according to claim 5, wherein a light-emitting element is formed in the pixel portion. 16. A method for manufacturing a semiconductor device, comprising: forming a damaged region at a predetermined depth from a surface of a single-crystal semiconductor substrate; forming a first insulating layer over the single-crystal semiconductor substrate; bonding the single-crystal semiconductor substrate to a substrate having an insulating surface with at least the first insulating layer interposed between the single-crystal semiconductor substrate and the substrate having an insulating surface; separating the single-crystal semiconductor substrate at the damaged region to form a single-crystal semiconductor layer over the substrate having an insulating surface, wherein the single-crystal semiconductor layer includes a first region and a second region; performing a heat treatment on the single-crystal semiconductor layer; irradiating the first region with laser light after the heat treatment; and forming a circuit of a pixel portion using the second region which is not irradiated with the laser light, and a driver circuit for driving the circuit of the pixel portion using the first region which is irradiated with the laser light. 17. The method for manufacturing a semiconductor device according to claim 16, wherein the first insulating layer is formed by a chemical vapor deposition method using an organic silane gas. 18. The method for manufacturing a semiconductor device according to claim 16, further comprising the step of forming a second insulating layer over the first insulating layer. 19. The method for manufacturing a semiconductor device according to claim 16, further comprising the step of forming a second insulating layer over the substrate having an insulating surface. 20. The method for manufacturing a semiconductor device according to claim 16, wherein the first insulating layer is formed after forming the damaged region. 21. The method for manufacturing a semiconductor device according to claim 16, wherein the damaged region is formed after forming the first insulating layer. 22. The method for manufacturing a semiconductor device according to claim 16, wherein the first insulating layer has a stacked-layer structure. 23. The method for manufacturing a semiconductor device according to claim 16, wherein the first insulating layer has a stacked-layer structure of a silicon oxynitride layer and a silicon nitride oxide layer; and wherein the silicon oxynitride layer is formed so as to be in contact with the single-crystal semiconductor substrate. 24. The method for manufacturing a semiconductor device according to claim 18, wherein the second insulating layer is formed by a chemical vapor deposition method using an organic silane gas. 25. The method for manufacturing a semiconductor device according to claim 19, wherein the second insulating layer is formed by a chemical vapor deposition method using an organic silane gas. 26. The method for manufacturing a semiconductor device according to claim 16, wherein a light-emitting element is formed in the pixel portion. 27. A method for manufacturing a semiconductor device, comprising: forming a damaged region at a predetermined depth from a surface of a single-crystal semiconductor substrate; forming an insulating layer over a substrate having an insulating surface; bonding the single-crystal semiconductor substrate to the substrate having an insulating surface with at least the insulating layer interposed between the single-crystal semiconductor substrate and the substrate having an insulating surface; separating the single-crystal semiconductor substrate at the damaged region to form a single-crystal semiconductor layer over the substrate having an insulating surface, wherein the single-crystal semiconductor layer includes a first region and a second region; irradiating the first region with laser light; and forming a circuit of a pixel portion using the second region which is not irradiated with the laser light, and a driver circuit for driving the circuit of the pixel portion using the first region which is irradiated with the laser light. 28. The method for manufacturing a semiconductor device according to claim 27, wherein the insulating layer is formed by a chemical vapor deposition method using an organic silane gas. 29. The method for manufacturing a semiconductor device according to claim 27, wherein the insulating layer has a stacked-layer structure. 30. The method for manufacturing a semiconductor device according to claim 27, wherein a light-emitting element is formed in the pixel portion. 31. A method for manufacturing a semiconductor device, comprising: forming a damaged region at a predetermined depth from a surface of a single-crystal semiconductor substrate; forming an insulating layer over a substrate having an insulating surface; bonding the single-crystal semiconductor substrate to the substrate having an insulating surface with at least the insulating layer interposed between the single-crystal semiconductor substrate and the substrate having an insulating surface; separating the single-crystal semiconductor substrate at the damaged region to form a single-crystal semiconductor layer over the substrate having an insulating surface, wherein the single-crystal semiconductor layer includes a first region and a second region; performing a heat treatment on the single-crystal semiconductor layer; irradiating the first region with laser light after the heat treatment; and forming a circuit of a pixel portion using the second region which is not irradiated with the laser light, and a driver circuit for driving the circuit of the pixel portion using the first region which is irradiated with the laser light. 32. The method for manufacturing a semiconductor device according to claim 31, wherein the insulating layer is formed by a chemical vapor deposition method using an organic silane gas. 33. The method for manufacturing a semiconductor device according to claim 31, wherein the insulating layer has a stacked-layer structure. 34. The method for manufacturing a semiconductor device according to claim 31, wherein a light-emitting element is formed in the pixel portion.
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