[특허]Boron diffusion in silicon devices

Boron diffusion in silicon devices 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/00
출원번호	UP-0301527 (2005-12-13)
등록번호	US-7790574 (2010-09-27)
발명자 / 주소	Rohatgi, Ajeet Kim, Dong Seop Nakayashiki, Kenta Rounsaville, Brian
출원인 / 주소	Georgia Tech Research Corporation
대리인 / 주소	Alston & Bird LLP
인용정보	피인용 횟수 : 0 인용 특허 : 86

초록 ▼

Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat r

대표청구항 ▼

What is claimed is: 1. A process for boron diffusion in a wafer, comprising the steps of: applying a boric oxide solution to a surface of the wafer; heating the wafer during a first heating cycle at a ramp-up rate greater than 10° C. per second to: form a borosilicate glass on the surface of the wafer; release an amount of boron underneath the borosilicate glass; and heating the wafer during a second heating cycle to; diffuse the released boron into the wafer; wherein the first heating cycle and the second heating cycle occur consecutively during a single heating process. 2. The process of claim 1, further comprising the step of cleaning the surface of the wafer so that the surface is hydrophilic. 3. The process of claim 1, further comprising the step of cleaning the surface of the wafer so that the surface is hydrophobic. 4. The process of claim 1, wherein the boric oxide solution further comprises boric acid. 5. The process of claim 1, wherein the boric oxide solution further comprises the boric oxide in a solvent taken from a group consisting of ethanol and Isopropanol (IPA). 6. The process of claim 3, wherein the boric oxide solution further comprises a solvent that promotes the uniform coating of the boric oxide solution on the hydrophobic surface. 7. The process of claim 1, wherein heating the wafer during the first heating cycle further comprises the steps of: evaporating a solvent component of the boric oxide solution; minimizing evaporation of the boric oxide; and facilitating a reaction between the boric oxide and the silicon to release the amount of boron underneath the borosilicate glass. 8. The process of claim 7, wherein the reaction between the boric oxide and the silicon forms a boron-silicon alloy due to a partial diffusion of the boron into the wafer. 9. The process of claim 8, wherein the borosilicate glass is removed from the surface of the wafer. 10. The process of claim 1, further comprising controlling a thickness of the borosilicate glass by adjusting a concentration of an amount of boric oxide in the boric oxide solution applied to the surface of the wafer. 11. The process of claim 1, wherein the wafer is heated during the first heating cycle at a rate of about 30° C. per second. 12. The process of claim 1, wherein the first heating cycle comprises an operating temperature that falls within a range of 400° C. to 1000° C. 13. The process of claim 1, wherein the boric oxide solution is applied to the surface of the wafer by spraying the boric oxide solution onto the surface of the wafer. 14. The process of claim 1, wherein the boric oxide solution is applied to the surface of the wafer by dipping the wafer into the boric oxide solution. 15. The process of claim 1, wherein the boric oxide solution is applied to the surface of the wafer by spinning the boric oxide solution onto the wafer. 16. A process for boron diffusion in a silicon wafer, comprising the steps of: applying a boric oxide solution to a surface of the wafer; heating the wafer during a first heating cycle at a ramp-up rate greater than 10° C. per second to: form a borosilicate glass on an outer surface of the wafer; release boron from the boric oxide into the silicon; and form a boron-silicon alloy underneath the borosilicate glass; heating the wafer during a second heating cycle to diffuse boron from the boron-silicon alloy into the wafer; and wherein the first heating cycle and the second heating cycle occur consecutively during a single heating process.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Boron diffusion in silicon devices 원문보기

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Boron diffusion in silicon devices 원문보기

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