초록 ▼

A system and method for providing low dielectric constant insulators in integrated circuits is provided. One aspect of this disclosure relates to a method for forming an integrated circuit insulator. The method includes forming an insulating layer using a first structural material upon a substrate,

A system and method for providing low dielectric constant insulators in integrated circuits is provided. One aspect of this disclosure relates to a method for forming an integrated circuit insulator. The method includes forming an insulating layer using a first structural material upon a substrate, the first structural material having sufficient mechanical characteristics to support metal during chemical-mechanical polishing (CMP). The method also includes depositing a metallic layer upon the insulating layer, the metallic layer adapted to be used as a wiring channel. The method further includes processing the metallic layer to form the wiring channel, where processing includes CMP. In addition, the method includes removing and replacing at least a portion of the first structural material with a second structural material, the second structural material having insufficient mechanical characteristics to support metal during CMP. Other aspects and embodiments are provided herein.

대표청구항 ▼

What is claimed is: 1. A system, comprising: a substrate; a hydrophobic material layer on the substrate; and a plurality of conductive copper structures embedded in the material layer; wherein the hydrophobic material layer has replaced a first insulating layer of higher dielectric constant after p

What is claimed is: 1. A system, comprising: a substrate; a hydrophobic material layer on the substrate; and a plurality of conductive copper structures embedded in the material layer; wherein the hydrophobic material layer has replaced a first insulating layer of higher dielectric constant after processing at least a portion of the plurality of copper conductive structures into a wiring level. 2. The system of claim 1, wherein the hydrophobic material layer includes a foamed polymer. 3. The system of claim 2, wherein the foamed polymer has cell size of less than 0.1 micron. 4. The system of claim 1, wherein the first insulating layer has a dielectric constant of at least 4. 5. The system of claim 1, wherein the first insulating layer includes Si3N4. 6. The system of claim 1, wherein the first insulating layer includes SiO2. 7. An system, comprising: a substrate; a plurality of stacked hydrophobic foamed polymer layers on the substrate; and a plurality of copper conductive structures embedded in each of the plurality of foamed polymer layers; wherein at least one of the foamed layers has replaced a first insulating layer of higher dielectric constant after processing at least a portion of the plurality of copper conductive structures into a wiring level. 8. The system of claim 7, wherein each of the foamed polymer layers has a cell size less than about one micron. 9. The system of claim 7, wherein at least one of the stacked foamed polymer layers includes a type 1 polyimide. 10. The system of claim 7, wherein at least one of the stacked foamed polymer layers includes polynorbornenes. 11. The system of claim 10, wherein the polynorbornenes include Avatrel. 12. The system of claim 7, wherein at least one of the stacked foamed polymer layers has been treated with a methane radical to make the layer hydrophobic. 13. A method, comprising: forming an insulating layer using a first structural material upon a substrate; depositing a metallic layer upon the insulating layer, the metallic layer adapted to be used as a wiring channel; processing the metallic layer to form the wiring channel; and removing and replacing at least a portion of the first structural material with a second structural material, the second structural material having been treated with a methane radical to make the second structural material hydrophobic. 14. The method of claim 13, wherein removing and replacing at least a portion of the first structural material with a second structural material includes removing and replacing the first structural material with a low dielectric constant organic material. 15. The method of claim 14, wherein removing and replacing at least a portion of the first structural material with a second structural material includes removing and replacing the first structural material with Teflon. 16. The method of claim 13, wherein depositing a metallic layer upon the insulating layer includes depositing copper. 17. The method of claim 13, wherein depositing a metallic layer upon the insulating layer includes depositing aluminum. 18. The method of claim 13, wherein depositing a metallic layer upon the insulating layer includes depositing silver. 19. The method of claim 13, wherein depositing a metallic layer upon the insulating layer includes depositing gold. 20. The method of claim 13, wherein removing and replacing at least a portion of the first structural material with a second structural material includes replacing the first structural material with a foamed polymer.