초록 ▼

A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region,

A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO2.

대표청구항 ▼

What is claimed is: 1. A method of forming a MOS transistor, comprising: providing a substrate having a gate thereon, a source region and a drain region therein with a channel region under the gate therebetween; pre-amorphizing the source region and the drain region to form amorphized regions; perf

What is claimed is: 1. A method of forming a MOS transistor, comprising: providing a substrate having a gate thereon, a source region and a drain region therein with a channel region under the gate therebetween; pre-amorphizing the source region and the drain region to form amorphized regions; performing a first ion implantation to implant a first dopant in the source region and the drain region to form a first doped region; forming at least a spacer on the sidewalls of the gate; performing a second ion implantation to implant a second dopant in the source region and the drain region to form a second doped region; annealing the source region and the drain region to activate the first dopant, regrow the amorphized regions to a substantially crystalline form, and form a junction profile; and performing a co-implantation process, after pre-amorphizing the source region and the drain region and before annealing the source region and the drain region, to implant a carbon co-implant in the source region and the drain region, wherein the carbon co-implant is from a precursor comprising CO or CO2. 2. The method of claim 1, wherein the carbon co-implant is implanted in the substrate at a place substantially the same as that of the first dopant or the second dopant. 3. The method of claim 1, further, after pre-amorphizing the source region and the drain region and before performing the first ion implantation, comprising: performing a halo implantation to implant a third dopant between the channel region and the source region and between the channel region and the drain region. 4. The method of claim 3, wherein the carbon co-implant is implanted in the substrate at a place substantially the same as that of the first dopant, the second dopant, or the third dopant. 5. The method of claim 3, wherein the co-implantation process is performed after pre-amorphizing the source region and the drain region and before performing the halo implantation. 6. The method of claim 3, wherein the co-implantation process is performed after performing the halo implantation and before performing the first ion implantation. 7. The method of claim 1, wherein the co-implantation process is performed after pre-amorphizing the source region and the drain region and before performing the first ion implantation. 8. The method of claim 1, wherein the co-implantation process is performed after performing the first ion implantation and before performing the second ion implantation. 9. The method of claim 1, wherein the co-implantation process is performed after performing the second ion implantation and before annealing the source region and the drain region. 10. The method of claim 1, wherein the first dopant comprises B, BF2, BwHz+, or (BwHz)m+, wherein w is a number of 2 to 30, z is a number of 2 to 40, and m is a number of 10 to 1000.