An apparatus and method is described for measuring a local surface temperature of a semiconductor device under stress. The apparatus includes a substrate, and a reference MOSFET. The reference MOSFET may be disposed closely adjacent to the semiconductor device under stress. A local surface temperature of the semiconductor device under stress may be measured using the reference MOSFET, which is not under stress. The local surface temperature of the semiconductor device under stress may be determined as a function of drain current values of the reference M...
The invention claimed is: 1. An apparatus for measuring temperature, comprising: a substrate; and a reference MOSFET, supported by the substrate and adjacent to a semiconductor device such that current through the reference MOSFET is representative of a temperature of the semiconductor device when the semiconductor device is under stress and the reference MOSFET is not under stress, the reference MOSFET disposed on a singulation scribe line of the substrate. 2. The apparatus of claim 1, wherein a local surface temperature of the semiconductor device ...
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