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A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic components. A semiconductor device i

A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic components. A semiconductor device including a layer of the passivating coupling material, and a method of manufacturing such a semiconductor device are also contemplated.

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The invention claimed is: 1. A passivating coupling material for passivating a dielectric material and for facilitating metal deposition on such a passivated dielectric material, wherein the passivating coupling material comprises: a first organosilane having the general formula: in which: n1 i

The invention claimed is: 1. A passivating coupling material for passivating a dielectric material and for facilitating metal deposition on such a passivated dielectric material, wherein the passivating coupling material comprises: a first organosilane having the general formula: in which: n1 is an integer greater than or equal to 1, each Si is a silicon atom; X1 is a functional group able to react with a surface hydroxyl site of the dielectric material, Y1 is either: X3, which is a further functional group able to react with a surface hydroxyl site of the dielectric material, H, which is a hydrogen atom, or R1, which is an organic apolar group; Y2 is either: X4, which is a further functional group able to react with a surface hydroxyl site of the dielectric material, H, which is a hydrogen atom, or R2, which is an organic apolar group, B1, the presence of which is optional, is a bridging group, Z1 is either: R3, which is an organic apolar group, H, which is a hydrogen atom, or X5, which is a hydrolizable functional group, Z2 is either: R4, which is an organic apolar group, H, which is a hydrogen atom, or X6, which is a hydrolizable functional group; and X2 is a hydrolizable functional group; and a second organosilane having a functional group able to react with a hydrolyzed functional group of the first organosilane, and a ligand for providing a metal nucleation site, the second organosilane having the general formula: in which: n2 is an integer equal to or greater than or equal to 0, each Si is a silicon atom; X7 is a functional group able to react with a hydrolyzed functional group of the first organosilane molecule, Y3 is either: X8, which is a further functional group able to react with a hydrolyzed functional group of the first organosilane molecule, H, which is a hydrogen atom, or R5, which is an organic apolar group; Y4 is either: X9, which is a further functional group able to react with a hydrolyzed functional group of the first organosilane molecule, H, which is a hydrogen atom, or R6, which is an organic apolar group, B2, the presence of which is optional, is a bridging group, Z3 is either: R7, which is an organic apolar group, H, which is a hydrogen atom, or L1, which is a ligand having an electron donor functionality and which is able to act as a metal nucleation site, Z4 is either: R8, which is an organic apolar group, H, which is a hydrogen atom, or L2, which is a ligand having an electron donor functionality and which is able to act as a metal nucleation site, and L is a ligand having an electron donor functionality and is able to act as a metal nucleation site, wherein the first and second organosilanes together constitute a composition providing metal nucleation sites that promote electroless metal deposition. 2. A material according to claim 1, wherein at least one of Z1 and Z2 of the first organosilane is, respectively, R3 and R4. 3. A material according to claim 1, wherein X1 and X7 and, if present, X3 and/or X4 and/or X8 and/or X9, are selected from the group consisting of: -chloride, -bromide, iodine, acryloxy-, alkoxy-, acetamido, acetyl-, allyl-, amino-, cyano-, epoxy-, imidazolyl, mercapto-, methanosulfonato-, sulfonato-, triflouroacetamido, and urea-containing groups. 4. A material according to claim 1, wherein B1 and/or B2 is a silylene or a carbene group. 5. A method of forming a passivating coupling layer according to claim 1 on a dielectric layer having hydroxyl groups on a surface thereof, the method comprising: depositing the first organosilane on the dielectric layer and permitting at least the functional group X1 to react with a respective hydroxyl group of the dielectric material; hydrolyzing at least the hydrolizable functional group X2 of the first organosilane; and depositing the second organosilane and permitting at least the functional group X7 to react with and bind to at least the hydrolyzed functional group X2 of the first organosilane, whereby at least the ligand L of the second organosilane is available to act as a metal nucleation site. 6. A semiconductor device comprising: a substrate; and a passivated dielectric layer formed on the substrate, wherein the dielectric layer is passivated with a passivating coupling material according to claim 1. 7. A semiconductor device according to claim 6, wherein the dielectric layer is porous. 8. A semiconductor device according to claim 7, wherein the porous dielectric layer is made from any one of carbonated silicon dioxide, tetraethylorthosilicate glass, and fluorine-doped tetraethylorthosilicate glass. 9. A semiconductor device according to claim 6 wherein it further comprises a metal layer formed on the passivated dielectric layer. 10. A method of manufacturing a semiconductor device comprising: forming a dielectric layer on a substrate; and passivating the dielectric layer according to the method of claim 5. 11. A method of claim 10, wherein the dielectric layer is a porous material, wherein the passivating coupling material functions to seal a porosity of the porous dielectric layer so as to retard the uptake of moisture into the porous dielectric layer. 12. A method according to claim 11, wherein the dielectric layer is made from any one of carbonated silicon dioxide, tetraethylorthosilicate glass, and fluorine-doped tetraethylorthosilicate glass. 13. A method according to claim 10, further comprising forming a metal layer on the passivated dielectric layer using a liquid-phase metal deposition process. 14. A method according to claim 13, wherein forming a metal layer on the passivated dielectric layer comprises a liquid-phase metal deposition process performed at a temperature of less than about 80° C. 15. A method according to claim 10, wherein passivating the dielectric layer comprises applying an aqueous solution containing the first organosilane on the surface of the dielectric layer. 16. A method according to claim 15, wherein passivating the dielectric layer comprises reacting at least the functional group X1 of the first organosilane contained in the aqueous solution faster than the dielectric material can adsorb water. 17. A method according to claim 10, wherein at least one of the first and second organosilanes is applied in a gas phase. 18. A method according to claim 10, wherein the at least one of the first and second organosilanes is combined with a carrier gas. 19. A method according to claim 10, wherein at least one of the first and second organosilianes is applied as a spray in a predetermined atmosphere. 20. A method according to claim 19, wherein the predetermine atmosphere is an inert atmosphere.