초록 ▼

One exemplary embodiment of an electrochromic thin-film material comprises a metal-chalcogen compound; and/or a mixture or solid solution of one or more metal-rich metal-chalcogen compounds and/or lithium. One or more of the metals comprise Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Sb, or Bi, or combina

One exemplary embodiment of an electrochromic thin-film material comprises a metal-chalcogen compound; and/or a mixture or solid solution of one or more metal-rich metal-chalcogen compounds and/or lithium. One or more of the metals comprise Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Sb, or Bi, or combinations thereof; and one or more of the chalcogens comprise O, S, Se, or Te, or combinations thereof.

대표청구항 ▼

What is claimed is: 1. An electrochromic thin-film material, comprising a metal-rich metal-chalcogen compound of at least one metal and at least one chalcogen, in which an atomic ratio of a total amount of chalcogens to a total amount of metals other than lithium is less than about 2:1. 2. The el

What is claimed is: 1. An electrochromic thin-film material, comprising a metal-rich metal-chalcogen compound of at least one metal and at least one chalcogen, in which an atomic ratio of a total amount of chalcogens to a total amount of metals other than lithium is less than about 2:1. 2. The electrochromic thin-film material according to claim 1, wherein the at least one metal comprises Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Sb, or Bi, or combinations thereof. 3. The electrochromic thin-film material according to claim 2, wherein the at least one chalcogen comprises O, S, Se, or Te, or combinations thereof. 4. The electrochromic thin-film material according to claim 1, wherein a thickness of the thin-film material is between about 1 nm and about 1000 nm. 5. The electrochromic thin-film material according to claim 4, wherein a thickness of the thin-film material is between about 5 nm and about 50 nm. 6. The electrochromic thin-film material according to claim 1, wherein the at least one chalcogen comprises O, S, Se, or Te, or combinations thereof. 7. The electrochromic thin-film material according to claim 1, wherein the thin-film material comprises NbxTeLiy, in which 0.5≦x≦20, and 0≦y≦20. 8. The electrochromic thin-film material according to claim 1, wherein the thin-film material comprises MoxTeLiy, in which 0.5≦x≦20, and 0≦y≦20. 9. The electrochromic thin-film material according to claim 1, wherein the thin-film material comprises TixTeLiy, in which 0.5≦x≦20, and 0≦y≦20. 10. The electrochromic thin-film material according to claim 1, wherein the thin-film material comprises WxTeLiy, in which 0.5≦x≦20, and 0≦y≦20. 11. The electrochromic thin-film material according to claim 1, wherein the thin-film material comprises CrxTeLiy, in which 0.5≦x≦20, and 0≦y≦20. 12. The electrochromic thin-film material according to claim 1, wherein the thin-film material comprises SbxTeCoyLiz, in which 0.5≦x≦20, 0.01≦y≦20, and 0≦z≦20. 13. An all-solid-state electrochromic device, comprising: a transparent base material; and an electrochromic multilayer-stack structure formed on the transparent base material, the electrochromic multilayer-stack structure comprising: a first transparent-conductive film; an ion-storage layer formed on the first transparent-conductive film; a solid-electrolyte layer formed on the ion-storage layer; and an electrochromic layer formed on the solid-electrolyte layer, the electrochromic layer comprising an electrochromic thin-film material comprising a metal-rich metal-chalcogen compound of at least one metal and at least one chalcogen, in which an atomic ratio of a total amount of chalcogens to a total amount of metals other than lithium is less than about 2:1. 14. The all solid-state electrochromic device according to claim 13, wherein the at least one metal comprises Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Sb, or Bi, or combinations thereof. 15. The all solid-state electrochromic device according to claim 14, wherein the at least one chalcogen comprises O, S, Se, or Te, or combinations thereof. 16. The all solid-state electrochromic device according to claim 13, wherein a thickness of the thin-film material is between about 1 nm and about 1000 nm. 17. The all solid-state electrochromic device according to claim 16, wherein a thickness of the thin-film material is between about 5 nm and about 50 nm. 18. The all solid-state electrochromic device according to claim 13, wherein the at least one chalcogen comprises O, S, Se, or Te, or combinations thereof. 19. The all solid-state electrochromic device according to claim 13, wherein the thin-film material comprises at least one of NbxTeLiy, MoxTeLiy, TixTeLiy, WxTeLiy, or CrxTeLiy, or combinations thereof, in which 0.5≦x≦20, and 0≦y≦20. 20. The all solid-state electrochromic device according to claim 13, wherein the thin-film material comprises SbxTeCoyLiz, in which 0.5≦x≦20, 0.01≦y≦20, and 0≦z≦20.