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Semiconductor processing parts having apertures with deposited coatings and methods for forming the same

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/32
  • C23C-016/42
출원번호 UP-0856418 (2007-09-17)
등록번호 US-7807222 (2010-10-26)
발명자 / 주소
  • Kuznetsov, Vladimir
출원인 / 주소
  • ASM International N.V.
대리인 / 주소
    Knobbe, Martens, Olson & Bear, LLP
인용정보 피인용 횟수 : 5  인용 특허 : 47

초록

Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes int

대표청구항

I claim: 1. A method for manufacturing a gas divider for a semiconductor processing reactor, comprising: providing a partially-formed gas divider configured to form a wall at least partially defining a process chamber of the reactor; forming holes in the gas divider, the holes extending completely

이 특허에 인용된 특허 (47)

  1. Steger Robert J. ; Redeker Fred C., Apparatus and method for cleaning of semiconductor process chamber surfaces.
  2. Kristian E. Johnsgard ; Jean-Fran.cedilla.ois Daviet ; James A. Givens ; Stephen E. Savas ; Brad S. Mattson ; Ashur J. Atanos, Apparatus and method for thermal processing of semiconductor substrates.
  3. Nakano Masao (Higashi-Sumiyoshi JPX) Mori Keiichi (Hyogo JPX) Hiraiwa Yoshitaka (Fukuoka JPX) Iizuka Shoji (Kita-Kyushu JPX) Shima Shozo (Chiba JPX) Nakamura Yukio (Chiba JPX), Apparatus for continuously measuring temperature of molten metal and method for making same.
  4. Takahashi Mitsukazu (Kyoto JPX) Chiba Takatoshi (Kyoto JPX) Nishii Kiyofumi (Kyoto JPX), Apparatus for heat-treating wafer by light-irradiation and device for measuring temperature of substrate used in such ap.
  5. Wu Robert W., Bonded silicon carbide parts in a plasma reactor.
  6. Shih Hong ; Han Nianci ; Mak Steve S. Y. ; Yin Gerald Zheyao, Boron carbide parts and coatings in a plasma reactor.
  7. Lee Hsing-Chung (Woodland Hills CA), CVD reactor with uniform layer depositing ability.
  8. Schoepp Alan M. ; Denty ; Jr. William M. ; Barnes Michael, Chamber liner for semiconductor process chambers.
  9. Chen Chen-An ; Littau Karl Anthony, Chemical vapor deposition manifold.
  10. McDiarmid James (Pleasanton CA) Johnsgard Kristian E. (San Jose CA), Chemical vapor deposition reactor and method.
  11. Monkowski Joseph R. (Carlsbad CA) Logan Mark A. (Carlsbad CA), Chemical vapor deposition reactor and method of use thereof.
  12. Pattison O. H. (Star Rte.-Box 58 Clovis NM 88101) Pattison Will (Star Rte.-Box 58 Clovis NM 88101), Clean funnel.
  13. Breidenbach Poul E. (Bruchkobel DEX) Hellmann Dietmar (Linsengericht DEX) Leber Helmut (Hanau DEX), Coated quartz glass component.
  14. Sajoto Talex ; Zhao Jun ; Ku Vincent ; Dornfest Charles, Cold trap.
  15. Shih, Hong; Han, Nianci; Yuan, Jie; Sommers, Joe; Ma, Diana; Vollmer, Paul; Willson, Michael C., Corrosion-resistant protective coating for an apparatus and method for processing a substrate.
  16. Craig R. Metzner ; Turgut Sahin ; Gregory F. Redinbo ; Pravin K. Narwankar ; Patricia M. Liu, Deposition reactor having vaporizing, mixing and cleaning capabilities.
  17. Hijikata Isamu (Kanagawa JPX) Uehara Akira (Kanagawa JPX) Samezawa Mitsuo (Kanagawa JPX), Electrode for use in the treatment of an object in a plasma.
  18. Frijlink Peter (Crosne FRX), Epitaxial reactor having a wall which is protected from deposits.
  19. Koike Atsushi (Chiba JPX), Film forming apparatus capable of preventing adhesion of film deposits.
  20. Choi, Soo Young; Shang, Quanyuan; Greene, Robert I.; Hou, Li, Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition.
  21. Kanaya Koichi (Annaka JPX), Heat treatment furnace with an exhaust baffle.
  22. Dubots Dominique,FRX ; Haerle Andrew, High purity siliconized silicon carbide having high thermal shock resistance.
  23. Auger Marc (Jonquiere CAX) Baril Daniel (Pierrefonds CAX) Parent Luc (Chicoutimi CAX) Perron Jean (Chicoutimi CAX), High temperature and abrasion resistant temperature measuring device.
  24. Ogawa Koji (Kasugai JPX) Suzuki Hiroshi (Tajimi JPX), Immersion-type temperature measuring apparatus using thermocouple.
  25. Wengert John F. ; Raaijmakers Ivo ; Halpin Mike ; Jacobs Loren ; Meyer Michael J. ; van Bilsen Frank ; Goodman Matt ; Barrett Eric ; Wood Eric ; Samuels Blake, Long life high temperature process chamber.
  26. Wicker Thomas E. ; Maraschin Robert A. ; Kennedy William S., Low contamination high density plasma etch chambers and methods for making the same.
  27. Kramer Martin S. (Romeo MI) Byrnes Larry E. (Rochester Hills MI) Holmes Gary L. (Grand Bland MI), Method and apparatus for application of thermal spray coatings to engine blocks.
  28. Hanmyo Masayuki (Fukuyama JPX) Ishikawa Masaru (Fukuyama JPX) Mizuoka Seishi (Fukuyama JPX), Method for measuring temperature of molten metal received in vessel.
  29. Tamura, Naoyuki; Takahashi, Kazue; Ito, Youichi; Ogawa, Yoshifumi; Shichida, Hiroyuki; Tsubone, Tsunehiko, Method of holding substrate and substrate holding system.
  30. Sirtl Erhard (Marktl DEX) Rath Heinz-Jorg (Burghausen DEX), Process for applying a protective layer to shaped carbon bodies.
  31. Allaire Claude (St. Eustache CAX), Protective ceramic device for immersion pyrometer.
  32. Quartarone James M. (Portsmouth RI), Protective coating system for aluminum.
  33. Bollen Theo P. C. (Genk PA BEX) Cassidy John E. (Churchville PA), Repeating temperature sensing immersion probe.
  34. deBoer Wiebe B.,NLX ; Ozias Albert E., Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment.
  35. Bosch, William Frederick, Semiconductor processing equipment having improved particle performance.
  36. Bosch, William Frederick; Dynan, Stephen Anthony; Shull, Marc David, Semiconductor processing equipment having improved particle performance.
  37. Kennedy William S. ; Maraschin Robert A. ; Wicker Thomas E., Semiconductor processing equipment having radiant heated ceramic liner.
  38. William S. Kennedy ; Robert A. Maraschin ; Jerome S. Hubacek, Semiconductor processing equipment having tiled ceramic liner.
  39. Lu Hao A ; Han Nianci ; Yin Gerald Z ; Wu Robert W, Silicon carbide composite article particularly useful for plasma reactors.
  40. Perlov Ilya (Santa Clara CA), Susceptor drive and wafer displacement mechanism.
  41. Fairbairn, Kevin; Barzilai, Jessica; Ponnekanti, Hari K.; Taylor, W. N. (Nick), Tandem process chamber.
  42. Sajoto Talex ; Selyutin Leonid ; Zhao Jun ; Dornfest Charles, Temperature controlled gas feedthrough.
  43. Jolly Stuart T. (Yardley PA), Vapor phase deposition apparatus.
  44. Samata Shuichi (Yokohama JPX) Matsushita Yoshiaki (Yokohama JPX), Vapor phase epitaxial growth apparatus.
  45. Nulman Jaim (Palo Alto CA) Maydan Dan (Los Altos Hills CA), Wafer heating and monitor module and method of operation.
  46. Miller Michael B. (DeSoto TX), Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same.
  47. Sibley Thomas (5439 McCommas Dallas TX 75206), Wafer support fixtures for rapid thermal processing.

이 특허를 인용한 특허 (5)

  1. Vukovic, Mirko, Gas distribution system and method for distributing process gas in a processing system.
  2. Hayashi, Daisuke, Movable gas introduction structure and substrate processing apparatus having same.
  3. Horiguchi, Masato; Tsujimoto, Hiroshi; Kitazawa, Takashi, Plasma processing apparatus.
  4. Glukhoy, Yuri, Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area.
  5. Villalobos, Guillermo R.; Hunt, Michael; Sadowski, Bryan; Sanghera, Jasbinder S.; Aggarwal, Ishwar D., Situ grown SiC coatings on carbon materials.
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