Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/44
H01L-021/76
출원번호
UP-0170663
(2008-07-10)
등록번호
US-7807500
(2010-10-26)
우선권정보
JP-1998-214125(1998-07-29)
발명자
/ 주소
Fukunaga, Takeshi
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Nixon Peabody LLP
인용정보
피인용 횟수 :
3인용 특허 :
178
초록▼
A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate
A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.
대표청구항▼
What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a porous layer in a single-crystal semiconductor substrate; forming a first oxide layer on the single-crystal semiconductor substrate; adding hydrogen into the single-crystal semico
What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a porous layer in a single-crystal semiconductor substrate; forming a first oxide layer on the single-crystal semiconductor substrate; adding hydrogen into the single-crystal semiconductor substrate through the first oxide layer, thereby forming a hydrogen-added layer; adhering the single-crystal semiconductor substrate and a supporting substrate having a second oxide layer with the first oxide layer and the second oxide layer interposed therebetween; performing a heat treatment, thereby separating the single-crystal semiconductor substrate along the hydrogen-added layer; and removing the porous layer over the supporting substrate, thereby forming a plurality of island-like single-crystal semiconductor layers over the supporting substrate. 2. A method for manufacturing a semiconductor device according to claim 1, wherein the hydrogen-added layer traverses the porous layer. 3. A method for manufacturing a semiconductor device according to claim 1, wherein the supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate. 4. A method for manufacturing a semiconductor device according to claim 1, further comprising a step of performing a heat treatment on the single-crystal semiconductor substrate, after forming the porous layer and before forming the first oxide layer. 5. A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is selected from the group consisting of a liquid crystal display unit, an electroluminescence display unit, and an integrated circuit. 6. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a porous layer in a single-crystal semiconductor substrate; forming a first oxide layer on surfaces of the single-crystal semiconductor substrate and the porous layer; adding hydrogen into the single-crystal semiconductor substrate and the porous layer through the first oxide layer, thereby forming a hydrogen-added layer in the single-crystal semiconductor substrate and the porous layer; adhering the single-crystal semiconductor substrate and a supporting substrate having a second oxide layer with the first oxide layer and the second oxide layer interposed therebetween; performing a heat treatment, thereby separating the single-crystal semiconductor substrate and the porous layer along the hydrogen-added layer; and removing the porous layer over the supporting substrate, thereby forming a plurality of island-like single-crystal semiconductor layers over the supporting substrate. 7. A method for manufacturing a semiconductor device according to claim 6, wherein the hydrogen-added layer traverses the porous layer. 8. A method for manufacturing a semiconductor device according to claim 6, wherein the supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate. 9. A method for manufacturing a semiconductor device according to claim 6, further comprising a step of performing a heat treatment on the single-crystal semiconductor substrate, after forming the porous layer and before forming the first oxide layer. 10. A method for manufacturing a semiconductor device according to claim 6, wherein the semiconductor device is selected from the group consisting of a liquid crystal display unit, an electroluminescence display unit, and an integrated circuit. 11. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a porous layer in a single-crystal semiconductor substrate; forming a first oxide layer on the single-crystal semiconductor substrate and the porous layer; adding hydrogen into the single-crystal semiconductor substrate and the porous layer through the first oxide layer, thereby forming a hydrogen-added layer in the single-crystal semiconductor substrate and the porous layer; adhering the single-crystal semiconductor substrate and a supporting substrate having a second oxide layer with the first oxide layer and the second oxide layer interposed therebetween; performing a first heat treatment, thereby separating the single-crystal semiconductor substrate and the porous layer along the hydrogen-added layer; performing a second heat treatment on the supporting substrate; and removing the porous layer over the supporting substrate, thereby forming a plurality of island-like single-crystal semiconductor layers over the supporting substrate. 12. A method for manufacturing a semiconductor device according to claim 11, wherein the hydrogen-added layer traverses the porous layer. 13. A method for manufacturing a semiconductor device according to claim 11, wherein the supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate. 14. A method for manufacturing a semiconductor device according to claim 11, further comprising a step of performing a heat treatment on the single-crystal semiconductor substrate, after forming the porous layer and before forming the first oxide layer. 15. A method for manufacturing a semiconductor device according to claim 11, wherein the semiconductor device is selected from the group consisting of a liquid crystal display unit, an electroluminescence display unit, and an integrated circuit. 16. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a porous layer in a single-crystal semiconductor substrate; forming a first oxide layer on the single-crystal semiconductor substrate and the porous layer; flattening a surface of the first oxide layer; adding hydrogen into the single-crystal semiconductor substrate and the porous layer through the flattened first oxide layer, thereby forming a hydrogen-added layer in the single-crystal semiconductor substrate and the porous layer; adhering the single-crystal semiconductor substrate and a supporting substrate having a second oxide layer with the first oxide layer and the second oxide layer interposed therebetween; performing a heat treatment, thereby separating the single-crystal semiconductor substrate and the porous layer along the hydrogen-added layer; and removing the porous layer over the supporting substrate, thereby forming a plurality of island-like single-crystal semiconductor layers over the supporting substrate. 17. A method for manufacturing a semiconductor device according to claim 16, wherein the hydrogen-added layer traverses the porous layer. 18. A method for manufacturing a semiconductor device according to claim 16, wherein the supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate. 19. A method for manufacturing a semiconductor device according to claim 16, further comprising a step of performing a heat treatment on the single-crystal semiconductor substrate, after forming the porous layer and before forming the first oxide layer. 20. A method for manufacturing a semiconductor device according to claim 16, wherein the semiconductor device is selected from the group consisting of a liquid crystal display unit, an electroluminescence display unit, and an integrated circuit. 21. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a porous layer in a single-crystal semiconductor substrate; forming a first oxide layer on the single-crystal semiconductor substrate and the porous layer; adding hydrogen into the single-crystal semiconductor substrate and the porous layer through the first oxide layer, thereby forming a hydrogen-added layer in the single-crystal semiconductor substrate and the porous layer; adhering the single-crystal semiconductor substrate and a supporting substrate having a second oxide layer with the first oxide layer and the second oxide layer interposed therebetween; performing a heat treatment, thereby separating the single-crystal semiconductor substrate and the porous layer along the hydrogen-added layer; removing the porous layer over the supporting substrate, thereby forming a plurality of island-like single-crystal semiconductor layers over the supporting substrate; forming a gate electrode over the island-like single-crystal semiconductor layer with a gate insulating film interposed therebetween; and introducing a p-type or an n-type impurity into the island-like single-crystal semiconductor layer to form at least a source region, a drain region and a channel forming region between the source region and the drain region. 22. A method for manufacturing a semiconductor device according to claim 21, wherein the hydrogen-added layer traverses the porous layer. 23. A method for manufacturing a semiconductor device according to claim 21, wherein the supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate. 24. A method for manufacturing a semiconductor device according to claim 21, further comprising a step of performing a heat treatment on the single-crystal semiconductor substrate, after forming the porous layer and before forming the first oxide layer. 25. A method for manufacturing a semiconductor device according to claim 21, wherein the semiconductor device is selected from the group consisting of a liquid crystal display unit, an electroluminescence display unit, and an integrated circuit.
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