$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
  • H01L-021/76
출원번호 UP-0170663 (2008-07-10)
등록번호 US-7807500 (2010-10-26)
우선권정보 JP-1998-214125(1998-07-29)
발명자 / 주소
  • Fukunaga, Takeshi
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Nixon Peabody LLP
인용정보 피인용 횟수 : 3  인용 특허 : 178

초록

A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate

대표청구항

What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: selectively forming a porous layer in a single-crystal semiconductor substrate; forming a first oxide layer on the single-crystal semiconductor substrate; adding hydrogen into the single-crystal semico

이 특허에 인용된 특허 (178)

  1. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Active matrix type display circuit and method of manufacturing the same.
  2. Linn Jack H. (Melbourne FL) Lowry Robert K. (Melbourne Beach FL) Rouse George V. (Indiatlantic FL) Buller James F. (Austin TX), Bonded wafer processing with metal silicidation.
  3. Linn Jack H. (Melbourne FL) Lowry Robert K. (Melbourne Beach FL) Rouse George V. (Indiatlantic FL) Buller James F. (Austin TX), Bonded wafer processing with metal silicidation.
  4. Linn Jack H. ; Lowry Robert K. ; Rouse George V. ; Buller James F., Bonded wafer processing with oxidative bonding.
  5. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX, CMOS semiconductor device having boron doped channel.
  6. Kazuaki Ohmi JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Composite member its separation method and preparation method of semiconductor substrate by utilization thereof.
  7. Yamamoto Mitsuyoshi,JPX ; Kawasaki Ikuya,JPX ; Inayoshi Hideo,JPX ; Narita Susumu,JPX ; Kubo Masaharu,JPX, Data processor and single-chip microcomputer with changing clock frequency and operating voltage.
  8. Hashimoto Yoshihiro,JPX, Display device.
  9. Yaung Dun-Nian,TWX ; Wuu Shou-Gwo,TWX ; Chao Li-Chih,TWX ; Huang Kuo Ching,TWX, Double spacer technology for making self-aligned contacts (SAC) on semiconductor integrated circuits.
  10. Koyama, Jun; Yamazaki, Shunpei, Driving circuit of a semiconductor display device and the semiconductor display device.
  11. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Electronic device.
  12. Yamazaki, Shunpei; Teramoto, Satoshi, Electronic device and method for manufacturing the same.
  13. Yamazaki, Shunpei; Teramoto, Satoshi, Electronic device and method for manufacturing the same.
  14. Yamazaki, Shunpei; Teramoto, Satoshi, Electronic device and method for manufacturing the same.
  15. Yamazaki,Shunpei; Teramoto,Satoshi, Electronic device and method for manufacturing the same.
  16. Yamazaki,Shunpei; Teramoto,Satoshi, Electronic device and method for manufacturing the same.
  17. Shunpei Yamazaki JP; Jun Koyama JP; Yoshiharu Hirakata JP; Takeshi Fukunaga JP, Electrooptical device.
  18. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Fabrication process for a semiconductor substrate.
  19. Kiyofumi Sakaguchi JP; Takao Yonehara JP, Fabrication process of semiconductor substrate.
  20. Takemura Yasuhiko (Kanagawa JPX), Gate insulated semiconductor device.
  21. Blake Terence G. W. (Dallas TX) Lu Hsindao (Dallas TX), High performance silicon-on-insulator transistor with body node to source node connection.
  22. Miyawaki Mamoru (Isehara JPX) Kondo Shigeki (Hiratsuka JPX) Nakamura Yoshio (Atsugi JPX) Kouchi Tetsunobu (Hiratsuka JPX), Image display device with a transistor on one side of insulating layer and liquid crystal on the other side.
  23. Ohwada Junichi (Hitachi JPX) Kawakami Hideaki (Mito JPX) Matsui Makoto (Kunitachi JPX) Maruyama Eiichi (Kodaira JPX), Imaging display device.
  24. Yoshimi Makoto (Tokyo JPX) Inaba Satoshi (Tokyo JPX) Murakoshi Atsushi (Tokyo JPX) Terauchi Mamoru (Tokyo JPX) Shigyo Naoyuki (Tokyo JPX) Matsushita Yoshiaki (Tokyo JPX) Aoki Masami (Tokyo JPX) Hamam, Insulated-gate transistor having narrow-bandgap-source.
  25. Blanc Jean-Philippe (Gieres FRX) Bonaime Jolle (Echirolles FRX) De Poncharra Jean du P. (Quaix-en-Chartreuse FRX) Truche Robert (Gieres FRX), Integrated circuit in silicon on insulator technology comprising a field effect transistor.
  26. Takasu Hiroaki,JPX ; Kojima Yoshikazu,JPX ; Takahashi Kunihiro,JPX, Light valve having a semiconductor film and a fabrication process thereof.
  27. Ishii Takayuki,JPX, Liquid crystal display and method of manufacturing the same.
  28. Fujikawa Takashi,JPX ; Nishiki Hirohiko,JPX ; Kataoka Yoshiharu,JPX, Liquid crystal display device having specified structure for contact hole connecting pixel electrode with source/drain e.
  29. Hongyong Zhang JP; Hideto Ohnuma JP; Yasuhiko Takemura JP, METHODOLOGY FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICES BY CRYSTALLIZING AN AMORPHOUS FILM WITH CRYSTALLIZATION PROMOTING MATERIAL, PATTERNING THE CRYSTALLIZED FILM, AND THEN INCREASING THE CRYSTAL.
  30. Miyazawa Yoshihiro (Kanagawa JPX) Minami Eric (Tokyo JPX) Matsushita Takeshi (Kanagawa JPX), MIS semiconductor device formed by utilizing SOI substrate having a semiconductor thin film formed on a substrate throug.
  31. Yamashita Kyoji,JPX, MOS semiconductor device with excellent drain current.
  32. Matsuoka Fumitomo (Kawasaki JPX), MOSFET having fine gate electrode structure.
  33. Klein Dean A., Memory controller with buffered CAS/RAS external synchronization capability for reducing the effects of clock-to-signal skew.
  34. Sato Nobuhiko,JPX, Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same.
  35. Smith Donald L., Method for enhancing hydrogenation of thin film transistors using a metal capping layer and method for batch hydrogenati.
  36. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
  37. Lee Sahng Kyoo,KRX ; Park Sang Kyun,KRX, Method for fabricating semiconductor wafers.
  38. Zhang Hongyong (Kanagawa JPX) Ohnuma Hideto (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method for fabricating thin film transistor using anodic oxidation.
  39. Hwang Jeong-Mo (Plano TX), Method for forming a silicon on insulator device.
  40. Kermani Ahmad (Fremont CA) Robertson Mike F. (San Jose CA) Ku Yen-Hui (Sunnyvale CA) Wong Fred (Fremont CA), Method for high temperature thermal processing with reduced convective heat loss.
  41. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX), Method for manufacturing a semiconductor device.
  42. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX ; Zhang Hongyong,JPX, Method for manufacturing a semiconductor device.
  43. Matsui Masaki,JPX ; Yamauchi Shoichi,JPX ; Ohshima Hisayoshi,JPX ; Onoda Kunihiro,JPX ; Asai Akiyoshi,JPX ; Sasaya Takanari,JPX ; Enya Takeshi,JPX ; Sakakibara Jun,JPX, Method for manufacturing a semiconductor substrate.
  44. Takemura Yasuhiko,JPX ; Teramoto Satoshi,JPX, Method for manufacturing semiconductor device with removable spacers.
  45. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Method for preparing semiconductor member.
  46. Funai Takashi (Tenri JPX) Makita Naoki (Nara JPX) Yamamoto Yoshitaka (Yamatokoriyama JPX) Morita Tatsuo (Soraku-gun JPX), Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallizatio.
  47. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
  48. Goesele Ulrich M. ; Tong Q.-Y., Method for the transfer of thin layers of monocrystalline material to a desirable substrate.
  49. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of fabricating a high reliable SOI substrate.
  50. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  51. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  52. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  53. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
  54. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
  55. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
  56. Kunikiyo Tatsuya,JPX, Method of fabricating semiconductor device and semiconductor device.
  57. Lin Ming-Ren ; Fang Peng ; Wollesen Donald L., Method of forming asymmetrically doped source/drain regions.
  58. Hsu Ching-Hsiang (Hsin Chu TWX) Wong Shyh-Chyi (Taichang TWX) Liang Mong-Song (Hsinchu TWX) Chung Steve S. (Hsinchu TWX), Method of making a body contact for a MOSFET device fabricated in an SOI layer.
  59. Inoue Shunsuke,JPX ; Miyawaki Mamoru,JPX ; Kohchi Tetsunobu,JPX, Method of making a semiconductor device.
  60. Eklund Robert H. (Plano TX), Method of making a thin film transistor.
  61. Houston Theodore W. (Richardson TX), Method of making extended body contact for semiconductor over insulator transistor.
  62. Hasegawa Mitsuhiko (Muranishi JPX), Method of making high speed semiconductor device having a silicon-on-insulator structure.
  63. Wang Raymond C. (Tempe AZ), Method of making isolated complementary monolithic insulated gate field effect transistors.
  64. Havemann Robert H. (Garland TX), Method of making thin film transistor and a silicide local interconnect.
  65. Wakai Haruo (Hamura JPX), Method of manufacturing a polysilicon thin film transistor.
  66. Shunpei Yamazaki JP, Method of manufacturing a semiconductor device.
  67. Yamazaki,Shunpei, Method of manufacturing a semiconductor device.
  68. Zhang Hongyong (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method of manufacturing a semiconductor device.
  69. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method of manufacturing a semiconductor device including reduction of a catalyst.
  70. Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX ; Teramoto Satoshi,JPX, Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bo.
  71. Miyawaki Mamoru (Isehara JPX) Kondo Shigeki (Hiratsuka JPX) Nakamura Yoshio (Atsugi JPX) Kouchi Tetsunobu (Hiratsuka JPX), Method of manufacturing an image display device with reduced cell gap variation.
  72. Kataoka Yuzo,JPX ; Inoue Shunsuke,JPX, Method of manufacturing an insulaed gate transistor.
  73. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX ; Atoji Tadashi,JPX, Method of manufacturing semiconductor article.
  74. Fukunaga Shinobu (Itami JPX) Yasuoka Akihiko (Itami JPX), Method of manufacturing semiconductor device.
  75. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.
  76. Hamajima Tomohiro,JPX ; Kikuchi Hiroaki,JPX, Method of producing bonded substrate with silicon-on-insulator structure.
  77. Cheung Nathan W. ; Lu Xiang ; Hu Chenming, Method of separating films from bulk substrates by plasma immersion ion implantation.
  78. Wu Shye-Lin,TWX, Method to simulataneously fabricate the self-aligned silicided devices and ESD protective devices.
  79. Miyasaka, Mitsutoshi; Matsueda, Yojiro; Takenaka, Satoshi, Methodology for fabricating a thin film transistor, including an LDD region, from amorphous semiconductor film deposited at 530° C. or less using low pressure chemical vapor deposition.
  80. Fariborz Assaderaghi ; Louis Lu-Chen Hsu ; Jack A. Mandelman, Mixed memory integration with NVRAM, dram and sram cell structures on same substrate.
  81. Ota Takashi (Komaki JPX) Kariya Mikio (Nagoya JPX), Multicolor liquid crystal display panel.
  82. Yamazaki, Shunpei, Nonvolatile memory and electronic apparatus.
  83. Takemura Yasuhiko,JPX, Process for fabricating semiconductor device.
  84. Pinker Ronald D. (Peekskill NY) Arnold Emil (Chappaqua NY) Baumgart Helmut (Mahopac NY), Process for making strain-compensated bonded silicon-on-insulator material free of dislocations.
  85. Yuzurihara Hiroshi (Isehara JPX) Miyawaki Mamoru (Tokyo JPX) Ishizaki Akira (Atsugi JPX) Momma Genzo (Hiratsuka JPX) Kochi Tetsunobu (Hiratsuka JPX), Process for manufacturing a semiconductor device by applying a non-single-crystalline material on a sidewall inside of a.
  86. Yamagata Kenji (Kawasaki JPX) Yonehara Takao (Atsugi JPX), Process for producing a semiconductor substrate.
  87. Yamagata Kenji,JPX ; Yonehara Takao,JPX, Process for producing a semiconductor substrate.
  88. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Process for producing semiconductor article.
  89. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate by heat treating.
  90. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate by heating to flatten an unpolished surface.
  91. Sugahara Kazuyuki (Hyogo JPX) Nishimura Tadashi (Hyogo JPX) Kusunoki Shigeru (Hyogo JPX) Inoue Yasuo (Hyogo JPX), Process for producing single crystal semiconductor layer and semiconductor device produced by said process.
  92. Nishida Shoji,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX ; Iwane Masaaki,JPX, Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor.
  93. Fukunaga Takeshi,JPX, Process for production of SOI substrate and process for production of semiconductor device.
  94. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  95. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  96. Fukunaga,Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  97. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Process for production of semiconductor substrate.
  98. Sakaguchi,Kiyofumi; Yonehara,Takao, Process for production of semiconductor substrate.
  99. Field Leslie A. (San Francisco CA), Process for removing sulfur from a hydrocarbon feedstream using a sulfur sorbent with alkali metal components or alkalin.
  100. Bruel Michel,FRX, Process for the manufacture of thin films of semiconductor material.
  101. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  102. Bruel,Michel, Process for the production of thin semiconductor material films.
  103. Aoki Masaaki (Minato JPX) Masuhara Toshiaki (Nishitama JPX) Warabisako Terunori (Nishitama JPX) Hanamura Shoji (Kokubunji JPX) Sakai Yoshio (Tsukui JPX) Isomae Seiichi (Sayama JPX) Meguro Satoshi (Ni, Recrystallized CMOS with different crystal planes.
  104. Kenney Donald M., SOI fabrication method.
  105. Kokubun Tetsuya,JPX, SOI-MOS field effect transistor that withdraws excess carrier through a carrier path silicon layer.
  106. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Semiconductor article with porous structure.
  107. Sasaki Nobuo (Kawasaki JPX), Semiconductor device.
  108. Shunpei Yamazaki JP; Takeshi Fukunaga JP, Semiconductor device.
  109. Takahashi Kunihiro,JPX ; Suzuki Mizuaki,JPX ; Yamazaki Tsuneo,JPX ; Takasu Hiroaki,JPX ; Nakajima Kunio,JPX ; Sakurai Atsushi,JPX ; Iwaki Tadao,JPX ; Kojima Yoshikazu,JPX ; Kamiya Masaaki,JPX, Semiconductor device.
  110. Yamazaki Shunpei,JPX, Semiconductor device.
  111. Yamazaki Shunpei,JPX, Semiconductor device.
  112. Yamazaki Shunpei,JPX ; Fukunaga Takeshi,JPX, Semiconductor device.
  113. Yamazaki, Shunpei; Fukunaga, Takeshi, Semiconductor device.
  114. Zhang Hongyong,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device.
  115. Yamaguchi Yasuo (Hyogo JPX) Ajika Natsuo (Hyogo JPX) Yamano Tsuyoshi (Hyogo JPX), Semiconductor device and a method of manufacturing thereof.
  116. Yamaguchi Yasuo (Hyogo JPX) Ajika Natsuo (Hyogo JPX) Yamano Tsuyoshi (Hyogo JPX), Semiconductor device and a method of manufacturing thereof.
  117. Zhang, Hongyong; Yamaguchi, Naoaki; Takemura, Yasuhiko, Semiconductor device and a semiconductor integrated circuit.
  118. Arisumi Osamu,JPX ; Nishiyama Akira,JPX ; Yoshimi Makoto,JPX, Semiconductor device and manufacturing method thereof.
  119. Yamazaki Shunpei,JPX, Semiconductor device and manufacturing method thereof.
  120. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Semiconductor device and manufacturing method thereof.
  121. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.
  122. Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for forming the same.
  123. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  124. Konuma Toshimitsu,JPX ; Sugawara Akira,JPX ; Uehara Yukiko,JPX ; Zhang Hongyong,JPX ; Suzuki Atsunori,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Suzawa Hideomi,JPX ; Uochi Hideki,JPX ; Takemura, Semiconductor device and method for manufacturing the same.
  125. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  126. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  127. Konuma,Toshimitsu; Sugawara,Akira; Uehara,Yukiko; Zhang,Hongyong; Suzuki,Atsunori; Ohnuma,Hideto; Yamaguchi,Naoaki; Suzawa,Hideomi; Uochi,Hideki; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  128. Makita Naoki,JPX ; Yamamoto Yoshitaka,JPX, Semiconductor device and method for producing the same.
  129. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
  130. Zhang Hongyong,JPX, Semiconductor device and method of fabricating same.
  131. Shunpei Yamazaki JP; Hisashi Ohtani JP; Jun Koyama JP; Takeshi Fukunaga JP, Semiconductor device and method of manufacturing the same.
  132. Yamazaki, Shunpei; Ohtani, Hisashi, Semiconductor device and method of manufacturing the same.
  133. Yamazaki,Shunpei; Ohtani,Hisashi; Koyama,Jun; Fukunaga,Takeshi, Semiconductor device and method of manufacturing the same.
  134. Shunpei Yamazaki JP; Hisashi Ohtani JP; Etsuko Fujimoto JP; Takeshi Fukunaga JP; Hiroki Adachi JP; Hideto Ohnuma JP, Semiconductor device and method of manufacturing the semiconductor device.
  135. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Mitsuki Toru,JPX ; Ohtani Hisashi,JPX, Semiconductor device and process for producing same.
  136. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and semiconductor display device.
  137. Shunpei Yamazaki JP; Hisashi Ohtani JP, Semiconductor device forming a pixel matrix circuit.
  138. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Semiconductor device having an SOI structure and manufacturing method therefor.
  139. Yamazaki,Shunpei; Ohtani,Hisashi; Koyama,Jun; Fukunaga,Takeshi, Semiconductor device having crystalline semiconductor layer.
  140. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device having pixel electrode and peripheral circuit.
  141. Ono Mizuki,JPX, Semiconductor device including field effect transistor.
  142. Ohtani, Hisashi; Fujimoto, Etsuko, Semiconductor device that include silicide layers.
  143. Ohtani,Hisashi; Fujimoto,Etsuko, Semiconductor device that includes a silicide region that is not in contact with the lightly doped region.
  144. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Teramoto Satoshi,JPX, Semiconductor device with catalyst addition and removal.
  145. Takahashi Kunihiro (Tokyo JPX) Kojima Yoshikazu (Tokyo JPX) Takasu Hiroaki (Tokyo JPX) Yamazaki Tsuneo (Tokyo JPX) Iwaki Tadao (Tokyo JPX), Semiconductor device with monosilicon layer.
  146. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Mitsuki Toru,JPX ; Ohtani Hisashi,JPX, Semiconductor device with rod like crystals and a recessed insulation layer.
  147. Plus Dora (South Bound Brook NJ) Smeltzer Ronald K. (Princeton Township ; Mercer County NJ), Semiconductor device with source and drain depth extenders and a method of making the same.
  148. Shunpei Yamazaki JP; Jun Koyama JP, Semiconductor display device correcting system and correcting method of semiconductor display device.
  149. Hongyong Zhang JP; Akira Takenouchi JP; Hideomi Suzawa JP, Semiconductor integrated circuit and method for forming the same.
  150. Hongyong Zhang JP; Akira Takenouchi JP; Hideomi Suzawa JP, Semiconductor integrated circuit and method for forming the same.
  151. Noda Hiromasa,JPX ; Aoki Masakazu,JPX ; Idei Youji,JPX ; Kajigaya Kazuhiko,JPX ; Nagashima Osamu,JPX ; Itoh Kiyoo,JPX ; Horiguchi Masashi,JPX ; Sakata Takeshi,JPX, Semiconductor integrated circuit device and method of activating the same.
  152. Yonehara Takao (Atsugi JPX), Semiconductor member and process for preparing semiconductor member.
  153. Yonehara Takao,JPX ; Sato Nobuhiko,JPX ; Sakaguchi Kiyofumi,JPX ; Kondo Shigeki,JPX, Semiconductor member, and process for preparing same and semiconductor device formed by use of same.
  154. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  155. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  156. Hisashi Ohtani JP; Shunpei Yamazaki JP; Jun Koyama JP; Yasushi Ogata JP; Akiharu Miyanaga JP, Semiconductor thin film and semiconductor device.
  157. Yamazaki Shunpei,JPX, Semiconductor thin film and semiconductor device.
  158. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX, Semiconductor thin film in semiconductor device having grain boundaries.
  159. Kaminishi Morimasa,JPX ; Yamaguchi Takayuki,JPX ; Satoh Yukito,JPX, Semiconductor thin film sensor device with (110) plane.
  160. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  161. Kinugawa Masaaki (Tokyo JPX), Short channel CMOS on 110 crystal plane.
  162. Matloubian Mishel (Dallas TX), Sidewall channel stop process.
  163. Ogura Atsushi,JPX, Silicon-on-insulator (SOI) substrate and method of fabricating the same.
  164. Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Norton MA) Spitzer Mark B. (Sharon MA), Single crystal silicon arrayed devices for display panels.
  165. Sarma Kalluri R. (Mesa AZ) Chanley Charles S. (Scottsdale AZ), Single crystal silicon on quartz.
  166. Srikrishnan Kris V., Smart-cut process for the production of thin semiconductor material films.
  167. Weiyuen Kau ; John H. Cornish ; Qadeer A. Qureshi ; Shannon A. Wichman, System management mode circuits, systems and methods.
  168. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the sa.
  169. Shunpei Yamazaki JP; Akiharu Miyanaga JP; Jun Koyama JP; Takeshi Fukunaga JP, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same.
  170. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same.
  171. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same.
  172. Konishi Nobutake (Hitachiota JPX) Ono Kikuo (Hitachi JPX) Suzuki Takaya (Katsuta JPX) Miyata Kenji (Katsuta JPX), Thin film semiconductor device and method of fabricating the same.
  173. Takemura Yasuhiko (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Konuma Toshimitsu (Kanagawa JPX), Thin film semiconductor device with gate metal oxide and sidewall spacer.
  174. Yamazaki, Shunpei; Takemura, Yasuhiko, Thin film transistor.
  175. Inoue Shunsuke (Yokohama JPX) Ichikawa Takeshi (Hachioji JPX), Thin film transistor and liquid crystal display using the same.
  176. Yamazaki Shunpei,JPX ; Koyama Jun,JPX, Thin film transistor circuit and semiconductor display device using the same.
  177. Kobori Isamu,JPX ; Arai Michio,JPX, Thin-film transistor having a plurality of island-like regions.
  178. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device.

이 특허를 인용한 특허 (3)

  1. Yamazaki, Shunpei, Heat treatment apparatus and method for manufacturing SOI substrate using the heat treatment apparatus.
  2. Shimomura, Akihisa; Miyairi, Hidekazu, Method of manufacturing semiconductor device.
  3. Koyama, Masaki; Isaka, Fumito; Shimomura, Akihisa; Momo, Junpei, Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트