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Integrated circuit having pads and input/output (I/O) cells 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/48
출원번호 UP-0383653 (2006-05-16)
등록번호 US-7808117 (2010-10-26)
발명자 / 주소
  • Vo, Nhat D.
  • Tran, Tu-Anh N.
  • Carpenter, Burton J.
  • Hong, Dae Y.
  • Miller, James W.
  • Phillips, Kendall D.
출원인 / 주소
  • Freescale Semiconductor, Inc.
대리인 / 주소
    Hill, Susan C.
인용정보 피인용 횟수 : 6  인용 특허 : 68

초록

A pad (20) is electrically connected to a first I/O cell (14) while also physically overlying active circuitry of a second I/O cell (16). Note that although the pad (20) overlies the second I/O cell (16), the pad (20) is not electrically connected to the I/O cell (16). Such a pattern may be replicat

대표청구항

The invention claimed is: 1. An integrated circuit die, comprising: a first bond pad; a second bond pad; a third bond pad; a fourth bond pad; a first probe region electrically coupled to the fourth bond pad; a fifth bond pad; a sixth bond pad; a seventh bond pad, wherein the first probe region and

이 특허에 인용된 특허 (68)

  1. Hirota Isao,JPX, Analogue misfet with threshold voltage adjuster.
  2. Farnworth, Warren M.; Lindgren, Joseph T., Asymmetric plating.
  3. Yeh Yung I,TWX ; Chao Te Tsung,TWX ; Hung Ya Ping,TWX ; Fang Hui Chin,TWX, Ball grid array package.
  4. Chittipeddi Sailesh ; Ryan Vivian, Bond pad for a flip chip package, and method of forming the same.
  5. Shiue Ruey-Yun,TWX ; Wu Wen-Teng,TWX ; Shieh Pi-Chen,TWX ; Liu Chin-Kai,TWX, Bond pad structure for the via plug process.
  6. Edgar R. Zuniga ; Samuel A. Ciani, Bonding over integrated circuits.
  7. Hung,Meng Chi; Hou,Shang Yung; Jeng,Shin Puu, Bonding pad structure.
  8. Miller James Wesley ; Torres Cynthia Ann ; Cooper Troy L., Circuit for electrostatic discharge protection.
  9. Jiashann Chang, Clamp circuit to prevent ESD damage to an integrated circuit.
  10. Lin Shi-Tron,TWX, Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering.
  11. Yu James (San Jose CA), Distributed VCC/VSS ESD clamp structure.
  12. Worley Eugene R. (Irvine CA) Jones Addison B. (Yorba Linda CA) Gupta Rajiv (Brea CA), ESD protection for submicron CMOS circuits.
  13. Ker, Ming-Dou; Chang, Hun-Hsien; Wang, Wen-Tai, ESD protection networks with NMOS-bound or PMOS-bound diode structures in a shallow-trench-isolation (STI) CMOS process.
  14. Fujio Takeda ; James W. Miller, Electrostatic discharge (ESD) protection circuit.
  15. Miller James W. ; Khazhinsky Michael G. ; Hall Geoffrey B. ; Camarena Jose A. ; Chan Joseph ; Takeda Fujio, Electrostatic discharge circuit.
  16. Miller, James W.; Khazhinsky, Michael G.; Stockinger, Michael, Electrostatic discharge circuit and method therefor.
  17. Stockinger, Michael; Miller, James W., Electrostatic discharge protection circuit and method of operation.
  18. Dungan Thomas (Half Moon Bay CA) Coussens Eugene (Los Altos CA), Electrostatic discharge protection circuit with dynamic triggering.
  19. Miller, James W.; Hall, Geoffrey B.; Krasin, Alexander; Stockinger, Michael; Akers, Matthew D; Kamat, Vishnu G., Electrostatic discharge protection circuitry and method of operation.
  20. Countryman Roger (Austin TX) Gerosa Gianfranco (Austin TX) Mendez Horacio (Austin TX), Electrostatic discharge protection device.
  21. Merrill Richard B. (Daly City CA), Electrostatic discharge protection for integrated circuits.
  22. Strauss Mark S. (Allentown PA), Enhanced RC coupled electrostatic discharge protection.
  23. Watt Jeffrey, Fast turn-on silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection.
  24. Chan Chun ; Liang Mike, Hexagonal arrangements of bump pads in flip-chip integrated circuits.
  25. Murakami, Yukichi, Integrated circuit apparatus including static electricity protection circuit.
  26. Harvey Ian, Integrated circuit device interconnection techniques.
  27. Downey, Harold A.; Downey, Susan H.; Miller, James W., Integrated circuit die I/O cells.
  28. Pozder,Scott K.; Hess,Kevin J.; Leung,Pak K.; Travis,Edward O.; Wilkerson,Brett P.; Wontor,David G.; Zhao,Jie Hua, Integrated circuit having structural support for a flip-chip interconnect pad and method therefor.
  29. Chittipeddi Sailesh ; Cochran William Thomas ; Smooha Yehuda, Integrated circuit with active devices under bond pads.
  30. Shen Chi-Cheong ; Abbott Donald C. ; Bucksch Walter,DEX ; Corsi Marco ; Efland Taylor Rice ; Erdeljac John P. ; Hutter Louis Nicholas ; Mai Quang ; Wagensohner Konrad,DEX ; Williams Charles Edward, Integrated circuit with bonding layer over active circuitry.
  31. Baluswamy, Pary; Bossart, Tim H., Layout for measurement of overlay error.
  32. Ker, Ming-Dou; Jiang, Hsin-Chin, Low-capacitance bonding pad for semiconductor device.
  33. Maloney Timothy J. ; Eiles Travis M., MOSFET-based power supply clamps for electrostatic discharge protection of integrated circuits.
  34. Worley Eugene R. (Ivine CA) Nguyen Chilan T. (Fullerton CA) Kjar Raymond A. (Costa Mesa CA) Tennyson Mark R. (Irvine CA), Method and apparatus for coupling multiple independent on-chip Vdd busses to an ESD core clamp.
  35. Staab David R. (San Jose CA) Li Sheau-Suey (Cupertino CA), Method and structure for providing ESD protection for silicon on insulator integrated circuits.
  36. Cave Nigel G. ; Yu Kathleen C. ; Farkas Janos, Method for forming a semiconductor device.
  37. Pozder, Scott K.; Kobayashi, Thomas S., Method for forming a semiconductor device having a mechanically robust pad interface.
  38. Freeman ; Jr. John L. (Mesa AZ) Tracy Clarence J. (Tempe AZ), Method for making a planar multi-layer metal bonding pad.
  39. Lebaschi Ali, Multi-layer PCB blockade-via pad-connection.
  40. Puar Deepraj S. (Sunnyvale CA), Multiple probing of an auxilary test pad which allows for reliable bonding to a primary bonding pad.
  41. Shawn M. O'Connor ; Mark Allen Gerber ; Jean Desiree Miller, Packaged semiconductor with multiple rows of bond pads and method therefor.
  42. Pendse Rajendra D. ; Horner Rita, Radially staggered bond pad arrangements for integrated circuit pad circuitry.
  43. Stamper, Anthony K.; Yankee, Sally J., Recessed bond pad.
  44. Li, Mu-Jing; Yang, Amy, Redundant via rule check in a multi-wide object class design layout.
  45. M'Hamed Ibnabdeljalil ; Darvin R. Edwards ; Gregory B. Hotchkiss, Sacrificial structures for arresting insulator cracks in semiconductor devices.
  46. Yamaguchi Yasuo,JPX, Semiconductor device.
  47. Tanaka Kazuo,JPX, Semiconductor device and a method for making the same that provide arrangement of a connecting region for an external connecting terminal.
  48. Miks Jeffrey A. ; Patel Dilip ; Daniels Dwight L. ; St. Germain Stephen C., Semiconductor device and method of manufacture.
  49. Chen,Ker Min, Semiconductor device and method of manufacture thereof with two or more bond pad connections for each input/output cell.
  50. Hayano Kiminori,JPX, Semiconductor device equipped with electrostatic breakdown protection circuit.
  51. Downey, Susan H.; Harper, Peter R.; Hess, Kevin; Leoni, Michael V.; Tran, Tu-Anh, Semiconductor device having a bond pad and method therefor.
  52. Yong, Lois E.; Harper, Peter R.; Tran, Tu Anh; Metz, Jeffrey W.; Leal, George R.; Dinh, Dieu Van, Semiconductor device having a bond pad and method therefor.
  53. Downey, Susan H.; Miller, James W.; Hall, Geoffrey B., Semiconductor device having a wire bond pad and method therefor.
  54. Downey, Susan H.; Miller, James W.; Hall, Geoffrey B., Semiconductor device having a wire bond pad and method therefor.
  55. Usui,Takamasa, Semiconductor device using insulating film of low dielectric constant as interlayer insulating film.
  56. Hashimoto,Shin; Mimura,Tadaaki, Semiconductor device with multilayered metal pattern.
  57. Nakamura, Akio, Semiconductor device with staggered hexagonal electrodes and increased wiring width.
  58. Nakamura, Akio, Semiconductor device with staggered octagonal electrodes and increased wiring width.
  59. Kwon, Dong Whee; Lee, Jin Hyuk; Song, Yun Heub; Kang, Sa Yoon, Semiconductor devices with bonding pads having intermetal dielectric layer of hybrid configuration and methods of fabricating the same.
  60. Schulz, Bernd, Semiconductor structure and method for determining critical dimensions and overlay error.
  61. Puar Deepraj S. (Sunnyvale CA), Shunt circuit for electrostatic discharge protection.
  62. Huang,Tai Chun; Yao,Chih Hsiang, Structure and method for reinforcing a bond pad on a chip.
  63. Zhao, Bin, Structure for bonding pad and method for its fabrication.
  64. Tan Huynh ; Wollesen Donald L., Switchable ESD protective shunting circuit for semiconductor devices.
  65. Saran Mukul, System and method for bonding over active integrated circuits.
  66. Stockinger,Michael; Miller,James W., Transient detection circuit.
  67. Bassett Stephen J., Universal I/O pad structure for in-line or staggered wire bonding or arrayed flip-chip assembly.
  68. Shay Michael J. (Arlington TX), Voltage level triggered ESD protection circuit.

이 특허를 인용한 특허 (6)

  1. Tu, Chi-Li; Chen, Hung-Wei; Lu, Shi-Hsiang; Wang, Ching-Wen, Bonding pad structure having island portions and method for manufacturing the same.
  2. Rebeor, Chris J.; Shetty, Rohit, Hybrid IO cell for wirebond and C4 applications.
  3. Turner, Mark F.; Brown, Jeff S.; Dorweiler, Paul, Input/output core design and method of manufacture therefor.
  4. Polavarapu, Murty S.; Haddad, Nadim F., Method for implementing prompt dose mitigating capacitor.
  5. Nakanishi, Makoto; Yamanouchi, Tomoo; Okayasu, Junichi; Sato, Taku; Terasawa, Daiju; Takikawa, Masahiko, Semiconductor device, method for manufacturing of semiconductor device, and switching circuit.
  6. Mikalo, Ricardo, Staggered electrical frame structures for frame area reduction.
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