초록 ▼

A reference leak (10) includes a first substrate (20), a second substrate (40) disposed and bonded on the first substrate, and predetermined numbers of leak channels (14) defined in at least one of the first and second substrates. Oblique walls of the leak channels are formed by crystal planes of th

A reference leak (10) includes a first substrate (20), a second substrate (40) disposed and bonded on the first substrate, and predetermined numbers of leak channels (14) defined in at least one of the first and second substrates. Oblique walls of the leak channels are formed by crystal planes of the at least one of the first and second substrates, the oblique walls thereby being aligned according to such crystal planes. A method for making a reference leak is also provided.

대표청구항 ▼

We claim: 1. A reference leak, the reference leak comprising: a first substrate; a second substrate disposed on a top of the first substrate; and a plurality of leak channels defined between the first substrate and the second substrate, the size of the leak channels is measured on a scale of nanome

We claim: 1. A reference leak, the reference leak comprising: a first substrate; a second substrate disposed on a top of the first substrate; and a plurality of leak channels defined between the first substrate and the second substrate, the size of the leak channels is measured on a scale of nanometers, each leak channel including only one groove formed in one of the first and second substrates, each groove having oblique walls formed by crystal planes of a respective one of the first and second substrates, the reference leak having a first end surface and an opposite second end surface, and each groove extending through the reference leak from the first end surface to the second end surface; wherein the second substrate is made from an oxide of silicon or a metal selected from the group consisting of copper, nickel, molybdenum, and alloys composed of at least one of such metals. 2. The reference leak as claimed in claim 1, wherein the leak channels are defined in a top portion of the first substrate, and the first substrate is made from silicon. 3. The reference leak as claimed in claim 2, wherein the crystal plane orientation of the silicon for the first substrate is selected from one of a (100) crystal plane orientation and a (110) crystal plane orientation. 4. The reference leak as claimed in claim 3, wherein a selective layer is formed on portions of the first substrate near the leak channels. 5. The reference leak as claimed in claim 4, wherein the layer is made from one of a metal and an oxide of silicon, the metal being selected from the group consisting of copper, nickel, molybdenum, and alloys composed substantially of at least one of such metals. 6. The reference leak as claimed in claim 1, wherein a cross-section of each of the leak channels may be of a shape having mirror symmetry. 7. The reference leak as claimed in claim 1, wherein the plurality of leak channels are substantially parallel to each other, and each of the plurality of leak channels have a substantially same size. 8. A reference leak for use in detection of gas leaks in vacuum, the reference leak comprising: a top substrate having a bottom surface; and a bottom substrate having a top surface attached to the bottom surface of the top substrate, wherein at least one of the bottom surface of the top substrate and the top surface of the bottom substrate defines a plurality of grooves such that the top substrate and the bottom substrate cooperatively define a plurality of channels; wherein at least one of the top substrate and the bottom substrate is made from a metal or an oxide of silicon, and the detected gas is helium, air, oxygen, or argon. 9. The reference leak as claimed in claim 8, wherein the channels are substantially parallel to each other, and each of the channels have a substantially same size. 10. The reference leak as claimed in claim 8, wherein the gas is helium gas; the bottom substrate has a metal layer formed on portions thereof near and on the channels; the top substrate is made of metal. 11. The reference leak as claimed in claim 10, wherein the metal is selected from the group consisting of copper, nickel, molybdenum, and alloys composed substantially of at least one of such metals. 12. The reference leak as claimed in claim 8, wherein the gas is air, oxygen gas, or argon gas; the bottom substrate has an oxidized silicon layer formed on portions thereof near and on the channels; the top substrate is made of oxidized silicon. 13. The reference leak as claimed in claim 8, wherein the gas is air, oxygen gas, or argon gas; the bottom substrate has an oxidized silicon layer formed on portions thereof near and on the channels; the top substrate is made of silicon, the top substrate has an oxidized silicon layer formed on portions thereof near and on the channels. 14. A reference leak for use in detection of gas leaks in vacuum, the reference leak comprising: a top substrate having a bottom surface; and a bottom substrate having a top surface attached to the bottom surface of the top substrate, wherein at least one of the bottom surface of the top substrate and the top surface of the bottom substrate defines a plurality of grooves such that the top substrate and the bottom substrate cooperatively define a plurality of channels; wherein at least one of the top substrate and the bottom substrate has a metal layer or an oxidized silicon layer formed on portions thereof near and on the channels, and the detected gas is helium, air, oxygen, or argon. 15. The reference leak as claimed in claim 14, wherein the channels are substantially parallel to each other, and each of the channels have a substantially same size. 16. The reference leak as claimed in claim 14, wherein the gas is helium gas; the bottom substrate has a metal layer formed on portions thereof near and on the channels; the top substrate is made of silicon, the second substrate has a metal layer formed on portions thereof near and on the channels. 17. The reference leak as claimed in claim 16, wherein the metal is selected from the group consisting of copper, nickel, molybdenum, and alloys composed substantially of at least one of such metals. 18. The reference leak as claimed in claim 14, wherein the gas is air, oxygen gas or argon gas; the bottom substrate has an oxidized silicon layer formed on portions thereof near and on the channels; the top substrate is made of silicon, the top substrate has an oxidized silicon layer formed on portions thereof near and on the channels.