초록 ▼

By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made

By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1 ×1010cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ•cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

대표청구항 ▼

We claim: 1. A method of manufacturing a semiconductor device having a gate electrode comprising the steps of: forming a metal film by a sputtering method using a sputtering gas containing argon gas; patterning the metal film to form the gate electrode; forming a first gate insulating film over the

We claim: 1. A method of manufacturing a semiconductor device having a gate electrode comprising the steps of: forming a metal film by a sputtering method using a sputtering gas containing argon gas; patterning the metal film to form the gate electrode; forming a first gate insulating film over the gate electrode; forming a second gate insulating film over the first gate insulating film: and forming a semiconductor film over the second gate insulating film, wherein internal stress of the metal film is from −5×1010 dyn/cm2 to +5×1010 dyn/cm2. 2. The method according to claim 1, wherein the sputtering method uses a target including the metal having a purity of 4N or more. 3. The method according to claim 1, wherein the metal film includes an element selected from the group consisting of W, Ta, Ti, Mo, Cr, Nb, and Si. 4. The method according to claim 1, wherein the gate electrode has a laminated structure. 5. The method according to claim 1, wherein the sputtering gas essentially consists of Ar gas. 6. A method of manufacturing a semiconductor device having a gate electrode comprising the steps of: forming a metal film by a sputtering method using a sputtering gas containing argon gas; patterning the metal film to form the gate electrode; forming a first gate insulating film over the gate electrode; forming a second gate insulating film over the first gate insulating film; and forming a crystalline semiconductor film over the second gate insulating film, wherein internal stress of the metal film is from −5×1010 dyn/cm2 to +5×1010 dyn/cm2. 7. The method according to claim 6, wherein the sputtering method uses a target including the metal having a purity of 4N or more. 8. The method according to claim 6, wherein the metal film includes an element selected from the group consisting of W, Ta, Ti, Mo, Cr, Nb, and Si. 9. The method according to claim 6, wherein the gate electrode has a laminated structure. 10. The method according to claim 6, wherein the sputtering gas essentially consists of Ar gas. 11. A method of manufacturing a semiconductor device having a gate electrode comprising the steps of: forming a metal film by a sputtering method using a sputtering gas containing argon gas; patterning the metal film to form the gate electrode; forming a first gate insulating film comprising silicon nitride over the gate electrode; forming a second gate insulating film over the first gate insulating film; and forming a semiconductor film over the second gate insulating film, wherein internal stress of the metal film is from −5×1010 dyn/cm2 to +5×1010 dyn/cm2. 12. The method according to claim 11, wherein the sputtering method uses a target including the metal having a purity of 4N or more. 13. The method according to claim 11, wherein the metal film includes an element selected from the group consisting of W, Ta, Ti, Mo, Cr, Nb, and Si. 14. The method according to claim 11, wherein the gate electrode has a laminated structure. 15. The method according to claim 11, wherein the sputtering gas essentially consists of Ar gas. 16. A method of manufacturing a semiconductor device having a gate electrode comprising the steps of: forming a metal film by a sputtering method using a sputtering gas containing argon gas; patterning the metal film to form the gate electrode; forming a first gate insulating film over the gate electrode; forming a second gate insulating film over the first gate insulating film; and forming a semiconductor film over the second gate insulating film, wherein internal stress of the metal film is from −5×1010 dyn/cm2 to +5×1010 dyn/cm2, and wherein an amount of sodium contained within the gate electrode is 0.3 ppm or less. 17. The method according to claim 16, wherein the sputtering method uses a target including the metal having a purity of 4N or more. 18. The method according to claim 16, wherein the metal film includes an element selected from the group consisting of W, Ta, Ti, Mo, Cr, Nb, and Si. 19. The method according to claim 16, wherein the gate electrode has a laminated structure. 20. The method according to claim 16, wherein the sputtering gas essentially consists of Ar gas. 21. A method of manufacturing a semiconductor device having a gate electrode comprising the steps of: forming a metal film by a sputtering method using a sputtering gas containing argon gas; patterning the metal film to form the gate electrode; forming a gate insulating film comprising silicon nitride over the gate electrode; and forming a semiconductor film over the gate insulating film, wherein internal stress of the metal film is from −5×1010 dyn/cm2 to +5×1010 dyn/cm2, and wherein the gate electrode contains plural kinds of inert elements and 90% or more of the plural kinds of inert elements is argon. 22. The method according to claim 21, wherein the sputtering method uses a target including the metal having a purity of 4N or more. 23. The method according to claim 21, wherein the metal film includes an element selected from the group consisting of W, Ta, Ti, Mo, Cr, Nb, and Si. 24. The method according to claim 21, wherein the gate electrode has a laminated structure. 25. The method according to claim 21, wherein the sputtering gas essentially consists of Ar gas.