초록

MEMS switches of varying configurations provide individually acutatable contacts. The MEMS switches are sealed by an improved anodic bonding technique.

대표청구항 ▼

What is claimed is: 1. A MEMS device comprising: a first layer of material; and a second layer of material wherein frit material bonds the first layer of material to the second layer of material, during bonding the frit material being compressed by a rail located within a layer of material selected

What is claimed is: 1. A MEMS device comprising: a first layer of material; and a second layer of material wherein frit material bonds the first layer of material to the second layer of material, during bonding the frit material being compressed by a rail located within a layer of material selected from a group which includes the first layer of material and the second layer of material, said rail being disposed within a frit trench that receives the frit material. 2. The MEMS device of claim 1 wherein the frit material is anodically bonded between the first layer of material and the second layer of material. 3. The MEMS device of claim 2 wherein while establishing the frit bond between the first layer of material and the second layer of material a voltage of less than one-hundred (100) volts is applied across the first layer of material and the second layer of material. 4. A method for bonding together layers of a MEMS device comprising the steps of: disposing frit material between a mated first layer of material and second layer of material of a MEMS device; applying pressure across the mated first layer of material and second layer of material; heating the mated first layer of material and second layer of material; and applying an electrical potential across the mated first layer of material and second layer of material. 5. The method of claim 4 wherein the pressure applied across the mated first layer of material and second layer of material is at least 1800 Newtons. 6. The method of claim 4 wherein the mated first layer of material and second layer of material are heated to at least 400° C. 7. The method of claim 4 wherein the frit material is compressed by a rail located within a layer of material selected from a group which includes the first layer of material and the second layer of material. 8. The method of claim 7 wherein the rail is disposed within a frit trench that receives the frit material. 9. The method of claim 4 wherein the electrical potential applied across the mated first layer of material and second layer of material is less than 100 volts.