초록 ▼

Methods and apparatus for the commercial-scale production of purified polycrystalline silicon granules with one or more tailored levels of n- and p-type impurities from an impure silicon source such as, for example, metallurgical-grade silicon. Purification systems and methods involve: (1) one or mo

Methods and apparatus for the commercial-scale production of purified polycrystalline silicon granules with one or more tailored levels of n- and p-type impurities from an impure silicon source such as, for example, metallurgical-grade silicon. Purification systems and methods involve: (1) one or more series of temperature controlled reactors or vessels provided with dual fluidized beds wherein solids and gases are transported so that varying degrees of purification and deposition of solid silicon is accomplished by strict control of temperature and residence time; (2) separation and recovery of the compounds of high-melting-point impurities such as, for example, FeSi and FeI2; (3) purification, separation, and recycling of silicon tetraiodide; (4) separation and recovery of iodide compounds of lower-boiling-point liquid impurities such as for example, AlI3, in a continuous fractional distillation column, facilitated by an iodine reflux; (5) separation and recovery of very fine solid particles including impurity iodides and elemental silicon in a liquid mixture downstream of a fractional distillation column; (6) recovery of input iodine from the oxidation of both solid and liquid iodide impurity waste streams from the process.

대표청구항 ▼

What is claimed is: 1. A method of purifying silicon, comprising: (a) inputting an impure solid silicon feedstock and purified recycled silicon-bearing vapors into a first fluidized bed reactor, wherein the first fluidized bed reactor is maintained at a temperature between 1200° C. and 1350&#x

What is claimed is: 1. A method of purifying silicon, comprising: (a) inputting an impure solid silicon feedstock and purified recycled silicon-bearing vapors into a first fluidized bed reactor, wherein the first fluidized bed reactor is maintained at a temperature between 1200° C. and 1350° C., and wherein the purified recycled vapors include SiI4 and I2 vapors; (b) reacting the impure solid silicon feedstock and the purified recycled silicon-bearing vapors to form a mixture of vapors, wherein the mixture of vapors includes SiI2, SiI4, I2, I and iodine-bearing vapors of impurities from said impure solid silicon feedstock; (c) outputting, from said first fluidized bed reactor, an output including excess impure solid silicon and the mixture of vapors; (d) transferring said output into a solid-gas separator; (e) separating said output into separated solids and a separated vapor; (f) removing a fines portion of said separated solids from the solid-gas separator and returning a coarse part of said separated solids to said first fluidized bed reactor; (g) transferring said separated vapor to a second fluidized bed reactor, the second fluidized bed reactor maintained at a temperature between 800° C. and 1000° C.; (h) initially providing said second fluidized bed reactor with pure silicon seed particles; (i) forming pure silicon granules from the separated vapor; and (j) outputting pure silicon granules from the second fluidized bed reactor. 2. The method of claim 1 wherein said solid-gas separator is maintained at a similar temperature as said first fluidized bed reactor. 3. The method of claim 2 wherein said second fluidized bed reactor is maintained at a substantially lower temperature than the first fluidized bed reactor. 4. The method of claim 3 wherein, within said second fluidized bed reactor, SiI2 in the separated vapor reacts while in the vapor to form pure solid silicon nuclei, and SiI2 in the separated vapor reacts on said pure silicon seed particles to form a film of said pure silicon granules on top of said pure silicon seed particles. 5. The method of claim 4 wherein a mixture of SiI4, I2, I, SiI3, and iodine-bearing vapors of impurities from said impure silicon feedstock is output from said second fluidized bed reactor. 6. The method of claim 5 wherein said mixture of SiI4, I2, I, SiI3, and iodine-bearing vapors of impurities and said pure silicon granules are provided to a second solid-gas separator. 7. The method of claim 6, wherein said second solids-gas separator is maintained at a temperature lower than said second fluidized bed reactor to minimize silicon nucleation in the gas phase downstream from said second fluidized bed. 8. The method of claim 7, wherein pure solid silicon nuclei from said second solid-gas separator are returned to said second fluidized bed reactor.