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A method for making a semiconductor device with vertical electron injection, including: transferring a monocrystalline thin film onto a first face of a support substrate; producing at least one electronic component from the monocrystalline thin film; forming at least one recess in a second face of t

A method for making a semiconductor device with vertical electron injection, including: transferring a monocrystalline thin film onto a first face of a support substrate; producing at least one electronic component from the monocrystalline thin film; forming at least one recess in a second face of the substrate to enable electric or electronic access to the electronic component through the monocrystalline thin film; and producing a vertical electron injector configured to inject electrons into the electronic component.

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What is claimed is: 1. A manufacturing method for a semiconductor device with vertical electron injection, comprising the following steps: transferring a monocrystalline thin film onto a first face of a support substrate, said transferring step including putting into close contact a face of the mon

What is claimed is: 1. A manufacturing method for a semiconductor device with vertical electron injection, comprising the following steps: transferring a monocrystalline thin film onto a first face of a support substrate, said transferring step including putting into close contact a face of the monocrystalline thin film to the first face of the support substrate and bonding the monocrystalline thin film to the support substrate by molecular adhesion; producing at least one electronic component from a structure including the monocrystalline thin film; forming at least one recess in a second face of the support substrate to enable electric or electronic access to the electronic component through the at least one monocrystalline thin film; and producing a vertical electron injector configured to inject electrons into the at least one electronic component. 2. The method according to claim 1, further comprising: forming at least one active layer by crystal growth of semiconducting material on the monocrystalline thin film, the at least one electronic component being produced in the active layer, the crystal growth being realized before or after transfer. 3. The method according to claim 1, further comprising: producing the at least one electronic component from the monocrystalline thin film which is an active layer. 4. The method according to claim 1, wherein the transferring step comprises, before putting into close contact the face of the monocrystalline thin film to the first face of the support substrate: defining the monocrystalline thin film in a substrate of monocrystalline material by introducing gaseous species into the substrate of monocrystalline material to create a fracture zone, the monocrystalline thin film being located between one face of the substrate of monocrystalline material and a fracture zone; and fracture separating the monocrystalline thin film from a rest of the substrate of monocrystalline material, the separating being produced before or after the bonding. 5. The method according to claim 1, wherein the transferring step of the monocrystalline thin film is carried out through an intermediary of an adhesion layer. 6. The method according to claim 1, wherein the transferring step of the monocrystalline thin film is realized on a first face of a support substrate in silicon. 7. The method according to claim 1, wherein the transferring step includes transferring a thin film of monocrystalline SiC. 8. The method according to claim 5, wherein the transferring step of the monocrystalline thin film is carried out with an intermediary of an adhesion layer in SiO2. 9. The method according to claim 2, wherein forming at least one active layer includes forming an active layer by crystal growth on a layer of semiconducting material selected from the group consisting of SiC, GaN, compounds III-V and their derivatives, and diamond. 10. The method according to claim 1, wherein producing a vertical electron injector configured to inject electrons into the at least one electronic component includes depositing a first electrode on the at least one electronic component and depositing a second electrode under the at least one electronic component in the recess enabling access to the at least one electronic component. 11. The method according to claim 10, further comprising: depositing a mass in the recess, in contact with the electrode set under the component, to constitute a heat sink. 12. The method according to claim 1, further comprising: depositing a conducting coating capable of guiding an electron beam directed onto the at least one electronic component passing in the recess. 13. The method according to claim 1, further comprising: forming cells prolonging the recess of the support substrate to allow the electric or electronic access to electronic components formed from the structure including the monocrystalline thin film. 14. The method according to claim 1, wherein the step of producing at least one electronic component includes producing a component selected from the group consisting of light emitters, light detectors, power electronic components, and diodes. 15. The method according to claim 1, wherein the step of transferring a monocrystalline thin film includes transferring a monocrystalline thin film such that the structure is vacuum sealed. 16. The method according to claim 15, wherein the step of transferring a monocrystalline thin film includes transferring a monocrystalline thin film configured to be crossed by an electron beam. 17. The method according to claim 15, wherein the step of transferring a monocrystalline thin film includes transferring a monocrystalline thin film such that the structure forms a membrane deformable under a pressure difference, and the step of producing at least one electronic component includes producing a component providing a signal indicative of the deformation undergone by the membrane. 18. The method according to claim 7, wherein the forming at least one recess in the second face of the support substrate includes forming at least one recess in the thin film of monocrystalline SiC.