초록 ▼

An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substra

An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material.

대표청구항 ▼

What is claimed is: 1. A method of forming a substrate, comprising: providing a semiconductor material; implanting the semiconductor material with a spatially varying dose of one or more ion species; attaching the implanted semiconductor material to a handler substrate; and initiating a cleave of t

What is claimed is: 1. A method of forming a substrate, comprising: providing a semiconductor material; implanting the semiconductor material with a spatially varying dose of one or more ion species; attaching the implanted semiconductor material to a handler substrate; and initiating a cleave of the implanted semiconductor material from the handler substrate at a preferential location that is a function of a radially-shaped dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material. 2. The method according to claim 1, wherein the one or more ion species comprises hydrogen, helium, nitrogen, argon or combinations thereof. 3. The method according to claim 1, wherein the attaching of the implanted semiconductor material to the handler substrate comprises bonding or gluing. 4. The method according to claim 1, further comprising applying a treatment to the attached implanted semiconductor material and handler substrate. 5. The method according to claim 1, wherein the implanting comprises using an ion implanter or a plasma implanter. 6. The method according to claim 1, wherein the initiating of the cleave comprises effecting the cleave at an edge or center of the implanted semiconductor material and propagating the cleave along the direction of the radially-shaped dose gradient. 7. The method according to claim 1, wherein the implanting of the semiconductor material with the spatially varying dose of one or more ion species comprises adjusting a scan rate that the semiconductor material is moved through the one or more ion species. 8. The method according to claim 1, wherein the implanting of the semiconductor material with the spatially varying dose of one or more ion species comprises adjusting a scan direction in which the semiconductor material is moved through the one or more ion species. 9. A method of forming a film of material, comprising: providing a substrate; implanting the substrate with a non-uniform dose distribution of one or more ion species, wherein the non-uniform dose distribution defines a radially-shaped dose gradient that varies from a low dose gradient to a high dose gradient; attaching the substrate to a handler substrate; initiating a cleave of the substrate from the handler substrate at a region that comprises the high dose gradient; and propagating the cleave from the high dose gradient region in a direction towards another region comprising the low dose gradient to free a film of material from the substrate. 10. The method according to claim 9, wherein the one or more ion species comprises hydrogen, helium, nitrogen, argon or combinations thereof. 11. The method according to claim 9, wherein the attaching of the substrate to the handler substrate comprises bonding or gluing. 12. The method according to claim 9, further comprising applying a treatment to the attached substrate and handler substrate. 13. The method according to claim 9, wherein the implanting comprises using an ion implanter. 14. The method according to claim 9, wherein the implanting comprises using a plasma implanter. 15. The method according to claim 9, wherein the initiating of the cleave comprises effecting the cleave at a location near an edge or center of the substrate and the propagating of the cleave comprises continuing the cleave along the direction of the radially-shaped dose gradient from the high dose gradient region towards the low dose gradient region. 16. The method according to claim 9, wherein the implanting of the substrate with the non-uniform dose distribution of one or more ion species comprises adjusting a scan rate that the substrate is moved through the one or more ion species. 17. The method according to claim 9, wherein the implanting of the substrate with the non-uniform dose distribution of one or more ion species comprises adjusting a scan direction in which the substrate is moved through the one or more ion species. 18. A method of initiating a cleave of a substrate, comprising: providing a substrate; implanting the substrate with a radially-shaped spatially varying dose of one or more ion species; attaching the substrate to a handler substrate; and initiating a cleave at a region of the substrate from the handler substrate as a function of the radially-shaped spatially varying dose of one or more ion species. 19. A system for forming a film of material, comprising: means for providing a substrate; means for implanting the substrate with a radially-shaped spatially varying dose of one or more ion species that defines a dose gradient that varies from a low dose gradient to a high dose gradient; means for attaching the substrate to a handler substrate; means for initiating a cleave of the substrate from the handler substrate at a region that comprises the high dose gradient; and means for propagating the cleave from the high dose gradient region in a direction towards another region that comprises the low dose gradient to free a film of material from the substrate.