초록 ▼

There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact proper

There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

대표청구항 ▼

What is claimed is: 1. A method of manufacturing a semiconductor device, comprising: forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a layer to be peeled over the second material layer, the layer to be peeled including an element;

What is claimed is: 1. A method of manufacturing a semiconductor device, comprising: forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a layer to be peeled over the second material layer, the layer to be peeled including an element; partially irradiating laser light to a portion of the first material layer; bonding a support to the layer to be peeled; and peeling the layer to be peeled to which the support is bonded from the substrate to which the first material layer is provided at one of an inner portion of the second material layer and an interface between the second material layer and the first material layer, wherein laser light is irradiated to the first material layer from a side of the layer to be peeled, wherein the element comprises at least one thin film transistor that uses, as a channel, a semiconductor layer overlapped with a gate electrode and that includes an insulating film interposed between the semiconductor layer and the gate electrode, and wherein the step of peeling the layer to be peeled comprises peeling the layer to be peeled in a same direction as a channel width direction of the channel. 2. A method according to claim 1, wherein the laser light is emitted from a laser selected from the group consisting of a solid laser using one of YAG, YVO4, YLF, and YAlO3 which is doped with one of Nd, Tm, and Ho, an excimer laser, a CO2 laser, an argon laser, and a semiconductor laser. 3. A method according to claim 1, further comprising bonding a flexible substrate to the layer to be peeled after the peeling the layer to be peeled. 4. A method according to claim 1, further comprising bonding a flexible substrate to the layer to be peeled, wherein a film having thermal conductivity is formed on the flexible substrate. 5. A method according to claim 1, wherein the thin film transistor is a top gate TFT. 6. A method according to claim 1, wherein the thin film transistor is a bottom gate TFT. 7. A method according to claim 1, wherein the layer to be peeled includes micro capsules dispersed in a solvent. 8. A method of manufacturing a semiconductor device, comprising: forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a layer to be peeled over the second material layer, wherein the layer to be peeled includes at least a CMOS circuit; partially irradiating laser light to a portion of the first material layer; bonding a support to the layer to be peeled; and peeling the layer to be peeled to which the support is bonded from the substrate to which the first material layer is provided at one of an inner portion of the second material layer and an interface between the second material layer and the first material layer, wherein laser light is irradiated to the first material layer from a side of the layer to be peeled, wherein the CMOS circuit comprises at least one thin film transistor that uses, as a channel, a semiconductor layer overlapped with a gate electrode and that includes an insulating film interposed between the semiconductor layer and the gate electrode, and wherein the step of peeling the layer to be peeled comprises peeling the layer to be peeled in a same direction as a channel width direction of the channel. 9. A method according to claim 8, wherein the laser light is emitted from a laser selected from the group consisting of a solid laser using one of YAG, YVO4, YLF, and YAlO3 which is doped with one of Nd, Tm, and Ho, an excimer laser, a CO2 laser, an argon laser, and a semiconductor laser. 10. A method according to claim 8, further comprising bonding a flexible substrate to the layer to be peeled after the peeling the layer to be peeled. 11. A method according to claim 8, further comprising bonding a flexible substrate to the layer to be peeled, wherein a film having thermal conductivity is formed on the flexible substrate. 12. A method of manufacturing a semiconductor device, comprising: forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a layer to be peeled over the second material layer, wherein the layer to be peeled includes at least an element and micro capsules dispersed in a solvent; partially irradiating laser light to a portion of the first material layer; bonding a support to the layer to be peeled; and peeling the layer to be peeled to which the support is bonded from the substrate to which the first material layer is provided at one of an inner portion of the second material layer and an interface between the second material layer and the first material layer, wherein laser light is irradiated to the first material layer from a side of the layer to be peeled, wherein the element comprises at least one thin film transistor that uses, as a channel, a semiconductor layer overlapped with a gate electrode and that includes an insulating film interposed between the semiconductor layer and the gate electrode, and wherein the step of peeling the layer to be peeled comprises peeling the layer to be peeled in a same direction as a channel width direction of the channel. 13. A method according to claim 12, wherein the laser light is emitted from a laser selected from the group consisting of a solid laser using one of YAG, YVO4, YLF, and YAlO3 which is doped with one of Nd, Tm, and Ho, an excimer laser, a CO2 laser, an argon laser, and a semiconductor laser. 14. A method according to claim 12, further comprising bonding a flexible substrate to the layer to be peeled after the peeling the layer to be peeled. 15. A method according to claim 12, further comprising bonding a flexible substrate to the layer to be peeled, wherein a film having thermal conductivity is formed on the flexible substrate.