IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0581622
(2004-12-06)
|
등록번호 |
US-7829183
(2010-11-25)
|
국제출원번호 |
PCT/US2004/040629
(2004-12-06)
|
§371/§102 date |
20060605
(20060605)
|
국제공개번호 |
WO05/056873
(2005-06-23)
|
발명자
/ 주소 |
- Forrest, David Thomas
- Schauer, Mark Wallace
|
출원인 / 주소 |
- Morgan Advanced Ceramics, Inc.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
1 인용 특허 :
16 |
초록
▼
Improved methods for manufacturing silicon carbide rings using chemical vapor deposition. Cylindrical tubes are used as deposition substrates and the resulting material deposited on the inside surface of cylindrical tubes or on the outside surface of cylindrical mandrels, or both, is sliced or cut i
Improved methods for manufacturing silicon carbide rings using chemical vapor deposition. Cylindrical tubes are used as deposition substrates and the resulting material deposited on the inside surface of cylindrical tubes or on the outside surface of cylindrical mandrels, or both, is sliced or cut into the desired ring size and shape. The resulting rings have a crystal growth that is oriented substantially planar to the finished article. The invention also relates to nitrogen doped silicon carbide material, as well as to silicon carbide structures having axes of grain growth substantially parallel to the plane of the structure and to each other, and having rotational orientation that is substantially random with respect to the axes of grain growth of the grains.
대표청구항
▼
What is claimed is: 1. A structure formed by chemical vapor deposition, being a planar article having a planar direction and a normal direction, wherein the structure has a dimension in the planar direction that is larger than the dimension in the normal dimension and having grains substantially or
What is claimed is: 1. A structure formed by chemical vapor deposition, being a planar article having a planar direction and a normal direction, wherein the structure has a dimension in the planar direction that is larger than the dimension in the normal dimension and having grains substantially oriented in the planar direction, wherein the structure comprises silicon carbide. 2. A structure, as claimed in claim 1, wherein the structure is a flat ring having a circumference and wherein the grains are oriented in a substantially radial direction around the circumference of the ring. 3. A structure, as claimed in claim 1, having an axial thickness of less than 5 mm (0.2 inches) and a diameter of up to 356 mm (fourteen inches). 4. A structure, as claimed in claim 1, wherein the structure is a flat ring that has a curved outer surface. 5. A structure, as claimed in claim 1, wherein the structure is a flat ring having a circumference that has substantially symmetrical stresses around the circumference of the ring. 6. A structure, as claimed in claim 1, in which the structure comprises CVD deposited silicon carbide comprising an opacifying dopant dispersed in the silicon carbide in an amount sufficient to provide an opacity greater than 10,000 times that of CVD-deposited silicon carbide. 7. A structure, as claimed in claim 6, in which the dopant is nitrogen in an amount 100 ppm to about 5000 ppm. 8. A structure, as claimed in claim 1, in which the structure comprises CVD deposited silicon carbide material comprising FCC Moissanite-3C silicon carbide having a peak ratio of 220 planes to 111 planes ranging between about 0.30 and about 1.25, as measured by x-ray diffraction. 9. A structure, as claimed in claim 8, in which the peak ratio ranges between about 0.33 and about 0.60. 10. A structure, as claimed in claim 1, in which the structure comprises CVD deposited silicon carbide material comprising grains having their axes of growth substantially parallel to each other, and having rotational orientation that is substantially random with respect to the axes of grain growth of the grains. 11. A structure, as claimed in claim 1, in which the structure comprises silicon carbide and further comprises a layer of silicon deposited on at least one surface thereof. 12. A structure formed by chemical vapor deposition, being a planar article having a planar direction and a normal direction, wherein the structure has a dimension in the planar direction that is larger than the dimension in the normal dimension and having grains substantially oriented in the planar direction, wherein the structure is a ring that comprises an inner diameter and an outer diameter and wherein the distance between the inner diameter and outer diameter is approximately 25 mm (one inch). 13. A structure, as claimed in claim 12, wherein the inner diameter is between about 100 mm to 600 mm in diameter. 14. A structure formed by chemical vapor deposition, being a planar article having a planar direction and a normal direction, wherein the structure has a dimension in the planar direction that is larger than the dimension in the normal dimension, wherein the structure is cut from a CVD-formed tube of material such that it has grains substantially oriented in the planar direction of the article, wherein the structure comprises silicon carbide. 15. The structure of claim 14, wherein the structure is a flat ring having a circumference and wherein the grains are oriented in a substantially radial direction around the circumference of the ring.
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