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A single-crystal semiconductor layer is provided in a large area over a large-sized glass substrate, whereby a large-scale SOI substrate is obtained. A single-crystal semiconductor substrate provided with an embrittlement layer and a dummy substrate are bonded to each other, and the single-crystal s

A single-crystal semiconductor layer is provided in a large area over a large-sized glass substrate, whereby a large-scale SOI substrate is obtained. A single-crystal semiconductor substrate provided with an embrittlement layer and a dummy substrate are bonded to each other, and the single-crystal semiconductor substrate is separated at the embrittlement layer as a boundary by heat treatment to form a piece of single-crystal semiconductor over the dummy substrate. The dummy substrate is divided to form a piece of single-crystal semiconductor. The piece of single-crystal semiconductor is bonded to a supporting substrate, and the piece of single-crystal semiconductor is separated from the dummy substrate. Then, a plurality of pieces of single-crystal semiconductor are arranged and transferred to the large-sized glass substrate.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a semiconductor device, comprising: doping a plurality of single-crystal semiconductor substrates with hydrogen to form an embrittlement layer in each of the plurality of single-crystal semiconductor substrates; bonding each of the plurality of sing

What is claimed is: 1. A method for manufacturing a semiconductor device, comprising: doping a plurality of single-crystal semiconductor substrates with hydrogen to form an embrittlement layer in each of the plurality of single-crystal semiconductor substrates; bonding each of the plurality of single-crystal semiconductor substrates to a first substrate; removing a portion of each of the plurality of single-crystal semiconductor substrates at the embrittlement layer by performing heat treatment to form a plurality of single-crystal semiconductor layers over the first substrate; dividing the first substrate and the plurality of single-crystal semiconductor layers to form a plurality of pieces of single-crystal semiconductor, each of the plurality of pieces of single-crystal semiconductor including a piece of the first substrate; bonding a supporting substrate to each of the plurality of pieces of single-crystal semiconductor; separating at least a portion of the piece of the first substrate from each of the plurality of pieces of single-crystal semiconductor; bonding each of the plurality of pieces of single-crystal semiconductor to a second substrate having an insulating surface; and removing the supporting substrate from each of the plurality of pieces of single-crystal semiconductor. 2. A method for manufacturing a semiconductor device according to claim 1, wherein each of the plurality of pieces of single-crystal semiconductor is in contact with each other over the second substrate. 3. A method for manufacturing a semiconductor device according to claim 1, wherein the second substrate is a glass substrate. 4. A method for manufacturing a semiconductor device according to claim 1, comprising: after forming the plurality of single-crystal semiconductor layers over the first substrate, processing the plurality of single-crystal semiconductor layers into a plurality of single-crystal semiconductor islands; forming an insulating layer over the plurality of single-crystal semiconductor islands; and dividing the first substrate, the insulating layer and the plurality of single-crystal semiconductor islands to form a plurality of pieces of single-crystal semiconductor, each of the plurality of pieces of single-crystal semiconductor including a piece of the first substrate and a piece of the insulating layer. 5. A method for manufacturing a semiconductor device, comprising: doping a plurality of single-crystal semiconductor substrates with hydrogen to form an embrittlement layer in each of the plurality of single-crystal semiconductor substrates; forming a separation layer over a first substrate; bonding each of the plurality of single-crystal semiconductor substrates to the separation layer over the first substrate; removing a portion of each of the plurality of single-crystal semiconductor substrates at the embrittlement layer by performing heat treatment to form a plurality of single-crystal semiconductor layers over the first substrate through the separation layer; forming an insulating layer over the plurality of single-crystal semiconductor layers; dividing the first substrate, the separation layer, the insulating layer and the plurality of single-crystal semiconductor layers to form a plurality of pieces of single-crystal semiconductor, each of the plurality of pieces of single-crystal semiconductor including a piece of the first substrate, a piece of the separation layer and a piece of the insulating layer; bonding a supporting substrate to each of the plurality of pieces of single-crystal semiconductor; separating at least a portion of the piece of the first substrate from each of the plurality of pieces of single-crystal semiconductor at the piece of the separation layer; bonding each of the plurality of pieces of single-crystal semiconductor to a second substrate having an insulating surface; and removing the supporting substrate from each of the plurality of pieces of single-crystal semiconductor. 6. A method for manufacturing a semiconductor device according to claim 5, wherein each of the plurality of pieces of single-crystal semiconductor is in contact with each other over the second substrate. 7. A method for manufacturing a semiconductor device according to claim 5, wherein the second substrate is a glass substrate. 8. A method for manufacturing a semiconductor device according to claim 5, comprising: after forming the plurality of single-crystal semiconductor layers over the first substrate, processing the plurality of single-crystal semiconductor layers into a plurality of single-crystal semiconductor islands; forming the insulating layer over the plurality of single-crystal semiconductor islands; and dividing the first substrate, the separation layer, the insulating layer and the plurality of single-crystal semiconductor islands to form a plurality of pieces of single-crystal semiconductor, each of the plurality of pieces of single-crystal semiconductor including a piece of the first substrate, a piece of the separation layer and a piece of the insulating layer.