[특허]Aluminum cap for reducing scratch and wire-bond bridging of bond pads

Aluminum cap for reducing scratch and wire-bond bridging of bond pads 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/44
출원번호	UP-0948073 (2004-09-23)
등록번호	US-7833896 (2011-01-16)
발명자 / 주소	Wang, Chung Yu Lee, Chien-Hsiun
출원인 / 주소	Taiwan Semiconductor Manufacturing Company, Ltd.
대리인 / 주소	Slater & Matsil, L.L.P.
인용정보	피인용 횟수 : 0 인용 특허 : 44

초록 ▼

A method of manufacturing a semiconductor device and structure thereof. The method includes providing a workpiece, the workpiece having at least one conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls. A barrier layer is formed over the at least one conductive pad, wherein the barrier layer lines the sidewalls of the opening in the passivation layer and is disposed over a top portion of the passivation layer proximate the opening. A conductive cap is formed over the barrier layer within the opening in the passivation layer, and the conductive cap is recessed to a height below the top surface of the passivation layer. The conductive cap may be used for testing with a probe or may be used for wire-bonding.

대표청구항 ▼

What is claimed is: 1. A method of manufacturing a semiconductor device, the method comprising: providing a workpiece, the workpiece having at least one conductive pad with an overlying passivation layer; forming an opening in the passivation layer, thereby at least partially exposing the at least one conductive pad, the passivation layer having a top surface and the opening in the passivation layer having sidewalls; forming a barrier layer over the at least one conductive pad, wherein the barrier layer lines the sidewalls of the opening in the passivation layer and is disposed over a top portion of the passivation layer proximate the opening such that the barrier layer has a top surface over the top surface of the passivation layer; forming a conductive cap over the barrier layer within the opening in the passivation layer, the conductive cap completely filling the opening; and recessing the conductive cap to a height below the top surface of the passivation layer and the top surface of the barrier layer. 2. The method according to claim 1, wherein recessing the conductive cap comprises an isotropic etch process. 3. The method according to claim 1, wherein recessing the conductive cap comprises a spray wet etch process. 4. The method according to claim 1, wherein recessing the conductive cap comprises an etch process using H3PO4 or HNO3. 5. The method according to claim 4, wherein the etch process comprises H3PO4 or HNO3 acid at a concentration of about 12% to 25% with deionized water. 6. The method according to claim 4, wherein the etch process comprises a temperature of about 25 to 95° C. 7. The method according to claim 4, wherein the etch process comprises a time of about 60 to 300 seconds. 8. The method according to claim 1, wherein forming the conductive cap comprises forming aluminum, and wherein the at least one conductive pad comprises copper. 9. The method according to claim 1, wherein forming the conductive cap comprises forming about 2 μm or less of aluminum, and wherein recessing the conductive cap comprises recessing the conductive cap to a height of about 5000 Å or less below the top surface of the passivation layer. 10. The method according to claim 1, wherein forming the barrier layer comprises forming TaN or TiN. 11. The method according to claim 1, wherein forming the barrier layer comprises forming a material layer having a thickness of about 2000 Å or less. 12. The method according to claim 1, further comprising bonding a wire to the conductive cap disposed over each at least one conductive pad. 13. The method according to claim 1, wherein forming the barrier layer and forming the conductive cap comprise: depositing a barrier layer material over the workpiece; depositing a conductive cap material over the barrier layer material; and patterning the conductive cap material and the barrier layer material using a single lithography mask. 14. The method according to claim 13, further comprising polishing the conductive cap material using a chemical mechanical polish (CMP) process, before or after patterning the conductive cap material and the barrier layer material.

이 특허에 인용된 특허 (44)

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Iannuzzi Giulio (Milan ITX) deMartiis Carlo C. (Milan ITX) Del Bo Vittorio (Monza ITX) Gandolfi Luciano (Corsico ITX), Method of connecting semiconductor structure to external circuits.
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Hashimoto, Tatsuya; Maenosono, Toshiyuki; Togawa, Taiji; Enda, Takayuki; Takagi, Hideo, Method of fabricating semiconductor memory device and semiconductor memory device driver.
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Agarwal, Vishnu Kumar, Method of forming an encapsulated conductive pillar.
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Stuart E. Greer, Method of forming copper interconnection utilizing aluminum capping film.
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Chen Sheng-Hsiung,TWX, Method of improving copper pad adhesion.
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Syun-Ming Jang TW; Mong-Song Liang TW; Chen-Hua Yu TW; Chung-Shi Liu TW; Jane-Bai Lai TW, Method of improving the bondability between Au wires and Cu bonding pads.
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Harada Akihiko,JPX ; Saito Takayuki,JPX, Method of manufacturing a semiconductor device.
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Gupta Subhash,SGX ; Ho Paul Kwok Keung,SGX ; Zhou Mei Sheng,SGX ; Chockalingam Ramasamy,SGX, Method to avoid copper contamination during copper etching and CMP.
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McTeer, Allen, Multi-layered copper bond pad for an integrated circuit.
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Hsu Fang-Jen,TWX ; Fan Chen-Peng,TWX ; Yen Ming-Shuo,TWX ; Chen Chi-Ping,TWX, Process for preventing corrosion of aluminum bonding pads after passivation/ARC layer etching.
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Lansford Jeremy, Reduced variation in interconnect resistance using run-to-run control of chemical-mechanical polishing during semiconductor fabrication.
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Sailesh Chittipeddi ; Sailesh Mansinh Merchant, Wire bonding to copper.
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Aluminum cap for reducing scratch and wire-bond bridging of bond pads 원문보기

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