Thermoelectric power source utilizing ambient energy harvesting for remote sensing and transmitting
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-035/30
출원번호
UP-0727062
(2003-12-02)
등록번호
US-7834263
(2011-01-16)
발명자
/ 주소
DeSteese, John G.
Olsen, Larry C.
출원인 / 주소
Battelle Memorial Institute
대리인 / 주소
Klarquist Sparkman, LLP
인용정보
피인용 횟수 :
4인용 특허 :
32
초록▼
A method and apparatus for providing electrical energy to an electrical device wherein the electrical energy is originally generated from temperature differences in an environment having a first and a second temperature region. A thermoelectric device having a first side and a second side wherein th
A method and apparatus for providing electrical energy to an electrical device wherein the electrical energy is originally generated from temperature differences in an environment having a first and a second temperature region. A thermoelectric device having a first side and a second side wherein the first side is in communication with a means for transmitting ambient thermal energy collected or rejected in the first temperature region and the second side is in communication with the second temperature region thereby producing a temperature gradient across the thermoelectric device and in turn generating an electrical current.
대표청구항▼
The invention claimed is: 1. A method for providing power comprising: providing a thermoelectric generator having a first end and a second end; exposing the first end of the thermoelectric generator to thermal energy of a first temperature region; exposing the second end of the thermoelectric gener
The invention claimed is: 1. A method for providing power comprising: providing a thermoelectric generator having a first end and a second end; exposing the first end of the thermoelectric generator to thermal energy of a first temperature region; exposing the second end of the thermoelectric generator to thermal energy of a second temperature region; and utilizing a difference between the thermal energy of the first temperature region and the thermal energy of the second temperature region to produce electric power from the thermoelectric generator regardless of whether the first temperature region is warmer or cooler than the second temperature region; wherein the thermoelectric generator comprises a plurality of thermocouples comprising p-type and n-type thin film semiconductor thermoelements formed on a single flexible substrate; wherein each thermocouple comprises at least three thermoelements; and wherein each of the p-type thermoelements and the n-type thermoelements has a length to area ratio of between from about 1,000 cm−1 and to about 10,000 cm−1. 2. A method for providing power comprising: providing a thermoelectric generator having a first end and a second end; exposing the first end of the thermoelectric generator to thermal energy of a first temperature region; exposing the second end of the thermoelectric generator to thermal energy of a second temperature region; and utilizing a difference between the thermal energy of the first temperature region and the thermal energy of the second temperature region to produce electric power from the thermoelectric generator regardless of whether the first temperature region is warmer or cooler than the second temperature region; wherein the thermoelectric generator comprises a plurality of thermocouples comprising p-type and n-type thin film semiconductor thermoelements formed on a single flexible substrate, the p-type or the n-type thermoelements having L/A ratios from about 500 cm−1 to about 10,000 cm−1; wherein a single p-type thermoelement is, or a plurality of p-type thermoelements in parallel with each other are, electrically connected in series with a single n-type thermoelement or with a plurality of n-type thermoelements in parallel with each other; and wherein each thermocouple comprises at least three thermoelements. 3. The method of claim 2 wherein said p-type thermoelements comprise antimony telluride, bismuth telluride, lead telluride, tin telluride, zinc antimonide, cerium-iron antimonide, silicon-germanium, or combinations thereof. 4. The method of claim 2 wherein said n-type thermoelements comprise antimony telluride, bismuth telluride, lead telluride, cobalt antimonide; silicon-germanium, or combinations thereof. 5. The method of claim 2 wherein the p-type thermoelements comprise antimony telluride, bismuth telluride, lead telluride, tin telluride, zinc antimonide, cerium-iron antimonide, silicon-germanium, or combinations thereof sputter deposited as thin films on a substrate; and the n-type thermoelements comprise antimony telluride, bismuth telluride, lead telluride, cobalt antimonide, silicon-germanium or combinations thereof sputter deposited as thin films on a substrate. 6. The method of claim 2 wherein the single, continuous flexible substrate is wound in a coil configuration. 7. The method of claim 2 wherein the single, continuous flexible substrate is wrapped around a spindle. 8. The method of claim 2 wherein each of the p-type thermoelements and the n-type thermoelements has a length to area ratio of between from about 1,000 cm−1 and to about 10,000 cm−1. 9. The method of claim 2 wherein the first temperature region comprises the ground and the second temperature region comprises air above the ground. 10. The method of claim 9 wherein exposing the first end of the thermoelectric generator to a first temperature region comprises attaching a first heat pipe to the first end of the thermoelectric generator and burying the first heat pipe at least partially in the ground. 11. The method of claim 10 wherein exposing the second end of a thermoelectric generator to the thermal energy of the second temperature region comprises attaching a second heat pipe to the second end of the thermoelectric generator wherein the first heat pipe and the second heat pipe have substantially equal heat conduction capacity. 12. The method of claim 2 wherein the first temperature region comprises air inside a building duct and the second temperature region comprises air outside the duct. 13. A method for providing power comprising: providing a thermoelectric generator having a first end and a second end; exposing the first end of the thermoelectric generator to thermal energy of a first temperature region; exposing the second end of the thermoelectric generator to thermal energy of a second temperature region; and utilizing a difference between the thermal energy of the first temperature region and the thermal energy of the second temperature region to produce electric power from the thermoelectric generator regardless of whether the first temperature region is warmer or cooler than the second temperature region; wherein the thermoelectric generator comprises a plurality of thermocouples comprising p-type and n-type thin film semiconductor thermoelements each sputter deposited on a single, continuous flexible substrate formed in a coil configuration, and wherein the p-type and n-type thermoelements have L/A ratios of from about 500 cm−1 to about 10,000 cm−1; wherein a single n-type thermoelement is, or a plurality of n-type thermoelements in parallel with each other are, electrically connected in series with a single p-type thermoelement or with a plurality of p-type thermoelements in parallel with each other; and wherein each thermocouple comprises at least three thermoelements.
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