Electric device, stack of electric devices, and method of manufacturing a stack of electric devices
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/48
H01L-023/02
출원번호
UP-0856652
(2007-09-17)
등록번호
US-7834462
(2011-01-16)
발명자
/ 주소
Dobritz, Stephan
Polaczyk, Christoph
Irsigler, Roland
출원인 / 주소
Qimonda AG
대리인 / 주소
Economou, John S.
인용정보
피인용 횟수 :
12인용 특허 :
11
초록▼
According to one embodiment of the present invention, an electric device includes: a top surface and a bottom surface; a contact hole extending from the top surface through the device to the bottom surface; a conductive sealing element which seals the contact hole at or near the bottom surface; a co
According to one embodiment of the present invention, an electric device includes: a top surface and a bottom surface; a contact hole extending from the top surface through the device to the bottom surface; a conductive sealing element which seals the contact hole at or near the bottom surface; a conductive connection which is coupled to the conductive sealing element and which extends through the contact hole to the top surface; and solder material which is provided on a bottom surface of the conductive sealing element.
대표청구항▼
What is claimed is: 1. An electric device, comprising: a top surface and a bottom surface; a contact hole extending from the top surface through the device to the bottom surface; a conductive sealing element which seals the contact hole at or near the bottom surface, wherein the conductive sealing
What is claimed is: 1. An electric device, comprising: a top surface and a bottom surface; a contact hole extending from the top surface through the device to the bottom surface; a conductive sealing element which seals the contact hole at or near the bottom surface, wherein the conductive sealing element is disposed only within a lower portion of the contact hole and at or above a plane coplanar with the bottom surface; a conductive connection which is coupled to the conductive sealing element and extends through the contact hole to the top surface, wherein the conductive sealing element and the conductive connection form an open space extending from an upper surface of the conductive sealing element to the top surface; and solder material which is provided on a bottom surface of the conductive sealing element, wherein the solder material physically contacts the bottom surface of the conductive sealing element. 2. The electric device according to claim 1, wherein the solder material has the shape of a solder bump. 3. The electric device according to claim 1, wherein the conductive sealing element is a conductive membrane. 4. The electric device according to claim 1, wherein sidewalls of the contact hole are at least partly covered by an isolation layer. 5. The electric device according to claim 4, wherein at least a part of the conductive connection is formed by conductive material provided on the isolation layer. 6. The electric device according to claim 1, wherein the device comprises a chip. 7. The electric device according to claim 6, wherein the contact hole extends through the chip. 8. The electric device according to claim 6, wherein the chip is embedded into a molding mass. 9. The electric device according to claim 8, wherein the contact hole extends through the molding mass. 10. The electric device according to claim 1, wherein the device comprises a package. 11. The electric device according to claim 10, wherein the contact hole extends through a substrate or a molding mass of the package. 12. The electric device according to claim 1, wherein the bottom side of the device is an active side of the device. 13. The electric device according to claim 1, wherein an upper end of the conductive connection is shaped such that it is removably contactable from above by a solder bump. 14. A stack of at least two electric devices, each device comprising: a top surface and a bottom surface; a contact hole extending from the top surface through the device to the bottom surface; a conductive sealing element which seals the contact hole at or near the bottom surface, wherein the conductive sealing element is disposed only within a lower portion of the contact hole and at or above a plane coplanar with the bottom surface; a conductive connection which is coupled to the conductive sealing element and extends through the contact hole to the top surface, wherein the conductive sealing element and the conductive connection form an open space extending from an upper surface of the conductive sealing element to the top surface; solder material which is provided on a bottom surface of the conductive sealing element, wherein the solder material physically contacts the bottom surface of the conductive sealing element, and wherein an upper end of the conductive connection of a first device contacts the solder material of a second device stacked on the first device. 15. The stack according to claim 14, wherein each device comprises a plurality of contact holes, wherein lateral positions of the contact holes of the first device coincide with lateral positions of solder material areas of the second device stacked on the first device. 16. The electric device of claim 14, wherein the solder material of the first device physically contacts a top surface of the conductive sealing element of the second device. 17. The electric device according to claim 14, wherein the conductive sealing element is a conductive membrane. 18. The electric device according to claim 14, wherein sidewalls of the contact hole are at least partly covered by an isolation layer. 19. The electric device according to claim 18, wherein at least a part of the conductive connection is formed by conductive material provided on the isolation layer. 20. The electric device according to claim 14, wherein the device comprises a chip. 21. The electric device according to claim 20, wherein the contact hole extends through the chip. 22. An electric device comprising a first device, the first device comprising: a first contact hole disposed in a first substrate having a first top surface and an opposite first bottom surface the first contact hole extending from the first to surface to the first bottom surface; a first isolation layer disposed on sidewalls of the first contact hole; a first conductive material layer disposed within the first contact hole, the first conductive material layer disposed on the first isolation layer, wherein the first conductive material layer seals an opening of the first contact hole adjacent the first bottom surface of the first substrate and wherein the first conductive material provides the contact hole with an open space through to the top surface; a first solder material disposed under the first contact hole adjacent the first bottom surface of the first substrate, the first solder material physically contacting the first conductive material layer; and wherein the first solder material physically contacts the first isolation layer. 23. The electric device according to claim 22, further comprising a second device, the second device comprising: a second contact hole disposed in a second substrate having a second top surface and an opposite second bottom surface, the second contact hole extending from the second top surface to the second bottom surface; a second isolation layer disposed on sidewalls of the second contact hole; a second conductive material layer having an upper surface and an opposite lower surface disposed within the second contact hole, the second conductive material layer disposed on the second isolation layer, wherein the second conductive material layer seals an opening of the second contact hole adjacent the second bottom surface of the second substrate; and a second solder material disposed under the second contact hole adjacent the second bottom surface of the second substrate, the second solder material physically contacting the lower surface of the second conductive material layer. 24. The electric device according to claim 23, wherein the second contact hole is filled with the first solder material, and wherein the first solder material contacts the upper surface of the second conductive material layer.
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