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A semiconductor component arrangement includes a power transistor and a temperature measurement circuit. The power transistor includes a gate electrode, a source zone, a drain zone and a body zone. The body zone is arranged in a first semiconductor zone of a first conduction type. The temperature me

A semiconductor component arrangement includes a power transistor and a temperature measurement circuit. The power transistor includes a gate electrode, a source zone, a drain zone and a body zone. The body zone is arranged in a first semiconductor zone of a first conduction type. The temperature measuring circuit comprises a temperature-dependent resistor and an evaluation circuit coupled to the temperature-dependent resistor. The resistor is formed by a portion of said first semiconductor zone.

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The invention claimed is: 1. A semiconductor component arrangement, comprising: a power transistor comprising a gate electrode, a source zone, a drain zone and a body zone, said body zone being arranged in a first semiconductor zone of a first conduction type, a temperature measuring circuit compri

The invention claimed is: 1. A semiconductor component arrangement, comprising: a power transistor comprising a gate electrode, a source zone, a drain zone and a body zone, said body zone being arranged in a first semiconductor zone of a first conduction type, a temperature measuring circuit comprising a temperature-dependent resistor, which is formed by a portion of said first semiconductor zone, and an evaluation circuit coupled to said temperature-dependent resistor; wherein said temperature-dependent resistor in said first semiconductor zone is in contact with first and second connecting zones which are of the same conduction type as the first semiconductor zone, but which have a higher level of doping, and which are in contact with first and second connecting electrodes. 2. The semiconductor component arrangement of claim 1, wherein said power transistor further comprises a source electrode and wherein one of said first and second connecting zones of said temperature-dependent resistor is connected to the source electrode. 3. The semiconductor component arrangement of claim 1, further comprising an intermediate zone having a doping that is complementary to that of said connecting zones, the intermediate zone disposed between said connecting zones and adjoining said first semiconductor zone. 4. The semiconductor component arrangement of claim 1, wherein said evaluation circuit comprises a constant current source which is connected in series with said temperature-dependent resistor. 5. The semiconductor component arrangement of claim 1, wherein said evaluation circuit configured to compare a voltage-drop across the temperature-dependent resistor with a reference voltage, and to signal the result of the comparison on a signal line. 6. The semiconductor component arrangement of claim 3, wherein said intermediate zone is arranged electrically floating. 7. The semiconductor component arrangement of claim 3, wherein said intermediate zone is connected to one of said first and second connecting electrodes. 8. The semiconductor component arrangement of claim 5, wherein said evaluation circuit comprises a comparator having a first and a second input and an output, said first input operably connected to said temperature-dependent resistor, and said second input operably connected to a reference voltage source, and said output operably connected to said signal line. 9. A semiconductor component arrangement, which has: a power transistor comprising a gate electrode, a source zone, a drain zone and a body zone, said body zone being arranged in a first semiconductor zone of a first conduction type; a temperature-dependent resistor, which is formed by a portion of said first semiconductor zone, and a constant current source coupled to said temperature-dependent resistor; and a node coupled to the resistor providing a voltage level corresponding to the temperature; and wherein said temperature-dependent resistor in said first semiconductor zone is in contact with first and second connecting zones which are of the same conduction type as the first semiconductor zone, the connecting zones have a higher level of doping than the temperature dependent resistor. 10. The semiconductor component arrangement of claim 9, wherein said power transistor further comprises a source electrode and wherein one of said first and second connecting zones of said temperature-dependent resistor is connected to the source electrode. 11. The semiconductor component arrangement of claim 9, further comprising an intermediate zone having a doping that is complementary to that of said connecting zones, the intermediate zone disposed between said connecting zones and adjoining said first semiconductor zone. 12. The semiconductor component arrangement of claim 9, further comprising an evaluation circuit configured to compare a voltage at the node with a reference voltage, and to signal the result of the comparison on a signal line. 13. The semiconductor component arrangement of claim 11, wherein said intermediate zone is arranged electrically floating. 14. The semiconductor component arrangement of claim 11, wherein said intermediate zone is connected to a connecting electrode of the arrangement. 15. The semiconductor component arrangement of claim 12, wherein said evaluation circuit comprises a comparator with a first and a second input and an output, said first input connected to said temperature-dependent resistor, and said second input operably connected to a reference voltage source.