IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0801953
(2007-05-11)
|
등록번호 |
US-7843087
(2011-01-31)
|
우선권정보 |
KR-10-2006-0107571(2006-11-02) |
발명자
/ 주소 |
- Ryoo, Hong Je
- Kim, Jong Soo
- Rim, Geun Hie
- Gussev, Guennadi
|
출원인 / 주소 |
- Korea Electro Technology Research Institute
|
대리인 / 주소 |
Frommer Lawrence & Haug LLP
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
1 |
초록
▼
The present invention provides a pulse power generator using a semiconductor switch, which enables its lifespan to be significantly improved, allows for its miniaturization, and makes it possible to diversely control a high-voltage pulse output finally. According to the pulse power generator, it is
The present invention provides a pulse power generator using a semiconductor switch, which enables its lifespan to be significantly improved, allows for its miniaturization, and makes it possible to diversely control a high-voltage pulse output finally. According to the pulse power generator, it is possible to address and solve a difficulty in driving the semiconductor switch in series, i.e., the problems related to synchronization and insulation of a driving power supply, and to include a circuit which can cope with the generation of arc and short circuit to thereby significantly improve device protecting performance and stability of the pulse power generator.
대표청구항
▼
What is claimed is: 1. A pulse power generator comprising: a plurality of power stages connected in series with one another, each power stage including a plurality of power cells connected in series with one another, wherein each power cell has a semiconductor switch and a charge capacitor, an emit
What is claimed is: 1. A pulse power generator comprising: a plurality of power stages connected in series with one another, each power stage including a plurality of power cells connected in series with one another, wherein each power cell has a semiconductor switch and a charge capacitor, an emitter of the semiconductor switch being connected to the charge capacitor, a power switch driver for driving the semiconductor switch, a bypass diode connected to both ends of the semiconductor switch, and a rectifying diode connected to both ends of the charge capacitor and the semiconductor switches of the plurality of power cells are connected in series with one another; a power inverter for supplying power so as to charge the charge capacitor; a power loop for allowing a power to be supplied to the rectifying diodes within the respective power cells of each power stage from the power inverter, the power loop being formed of a high-voltage insulating cable; a control inverter for supplying a control signal so as to generate a gate signal and a gate power of the semiconductor switch; and a control loop for allowing the control signal to be supplied to the power switch drivers within the respective power cells of each power stage from the control inverter, the control loop being formed of a high-voltage insulating cable, whereby the plurality of power stages are connected in series with one another so that the entire semiconductor switches are connected in series with one another. 2. The pulse power generator according to claim 1, wherein the semiconductor switch is an insulated gate bipolar transistor (IGBT) or metal-oxide semiconductor field effect transistor (MOSFET). 3. The pulse power generator according to claim 1, wherein the power switch driver is configured such that it is connected to a gate, a collector and an emitter of the semiconductor switch and receives the control signal supplied from the control inverter through the control loop so as to concurrently output a gate signal and a driving power for driving the semiconductor switch 112 in response to the received control signal. 4. The pulse power generator according to claim 3, wherein the power switch driver includes: a capacitor adapted to be charged in response to the control signal of the control inverter applied through the control loop to supply the charged power as a driving power to the collector of the semiconductor switch; a switching transistor connected to a gate of the semiconductor switch to be turned on in response to the control signal of the control inverter applied through the control loop so as to apply the gate signal to the semiconductor switch to turn on the semiconductor switch; and a plurality of diodes, switching devices, and resistors, which are disposed between the capacitor and the switching device, and between the switching device and connection terminals connected to the gate, the collector and the emitter of the semiconductor switch, so that the switching device is turned on in response to the control signal and simultaneously power charged in the capacitor is applied to the collector of the semiconductor switch, and the switching device being turned on is turned off in response to the control signal to turn off the semiconductor switch or when a short circuit occurs at both ends of the semiconductor switch, the switching device is turned off to turn off the semiconductor switch. 5. The pulse power generator according to claim 1, wherein the power inverter functions to convert AC voltage applied thereto from an AC power supply into DC voltage so as to supply power for charging the capacitors to the power cells of each power stage, and includes four switching devices four diodes which are driven by means of a resonant power inverter controller via a full bridge inverter connected to the AC power supply, a resonant capacitor, a resonant inductor, the resonant power inverter controller, drivers. 6. The pulse power generator according to claim 1 or 4, wherein the control inverter functions to convert AC voltage applied thereto from the AC power supply into DC voltage so as to generate a control signal to be applied to each power switch driver, and includes four switching devices and four diodes which are driven by means of a timing controller via a full bridge inverter connected to the AC power supply, the timing controller and drivers for generating the control signal. 7. The pulse power generator according to claim 6, wherein the control inverter generates the control signal in which a turn-on signal having a positive (+) polarity and a turn-off signal having a negative (−) polarity are repeatedly output as the control signal to be applied to each power switch driver. 8. The pulse power generator according to claim 7, wherein the control inverter generates the control signal in which a several turn-off signals for pre-charging the capacitors included in the power switch driver, a turn-on signal for turning on a switching device connected to the semiconductor switch in the power switch driver, and a turn-off signal for turning off the switching device are repeatedly output. 9. The pulse power generator according to claim 7, wherein the control inverter is configured to control the output of the turn-on signal and the turn-off signal under the control of the timing controller. 10. The pulse power generator according to claim 4, wherein the power switch driver is configured such that when it receives the turn-on signal from the control inverter, the switching device connected to the gate of the semiconductor switch is turned on, and when it receives the turn-off signal from the control inverter, the switching device is turned off, so that the switching device continues to be maintained in a turned-on state until the turn-off signal is applied to the power switch driver after application of the turn-on signal to the power switch driver. 11. The pulse power generator according to claim 10, wherein the power switch driver includes a diode installed between the switching device and a connection terminal connected to a collector of the semiconductor switch, so that the switching device and the semiconductor switch continue to be maintained in a turned-on state until the turn-off signal is applied to the power switch driver, and if a short current flows through the semiconductor switch, the diode is reverse-biased to thereby turn off the switching device and the semiconductor switch due to an increase in a voltage drop across the semiconductor switch. 12. The pulse power generator according to claim 1, wherein the plurality of power stages connected in series with one another are arranged to be stacked vertically in a multi-layered structure, wherein a plurality of semiconductor switch modules each accommodating a same number of semiconductor switches included in the power cells, the power switch drivers included in the power cells, a plurality of storage capacitor units each accommodating the capacitor and the rectifying diode of the power cell are dispersedly disposed in a planar square space of each power stage in such a fashion that the plurality of semiconductor switch modules are spaced apart from predetermined intervals the front, rear, left and right sides in the planar square space so as to be positioned at edges adjacent to four corners of each power stage, and wherein a power transformer and a control transformer, which the power loop and the control loop constitute, respectively, are disposed at the central portion of the planar square space. 13. The pulse power generator according to claim 12, wherein the power loop constitutes the power transformer in each power stage together with windings connected to the rectifying diodes within the plurality of power cells constituting each power stage, and power supplied to each power stage from the power inverter via the power transformer allows the charge capacitors within the power cells of each power stage to be charged in parallel. 14. The pulse power generator according to claim 13, wherein the power loop constitutes the power transformer in each power stage in conjunction with windings connected to the rectifying diodes within the plurality of power cells constituting each power stage. 15. The pulse power generator according to claim 12, wherein the control loop constitutes the control transformer in each power stage together with windings connected to the power switch drivers within the plurality of power cells constituting each power stage, and the power switch drivers are applied with the control signal supplied to each power stage from the control inverter via the control transformer as insulated gate power applied to the power cells via each power stage. 16. The pulse power generator according to claim 15, wherein the control loop constitutes the control transformer in each power stage in conjunction with windings connected to the power switch drivers within the plurality of power cells constituting each power stage. 17. The pulse power generator according to claim 16, wherein the control transformer is configured such that the control loop of one turn formed of a high-voltage insulating cable passes through the center of a core of the control transformer on which the windings of the power switch drivers within the plurality of power cells are wound. 18. The pulse power generator according to claim 12, wherein the plurality of power switch drivers are placed between the semiconductor switch modules positioned at left and right sides of the planar square space defined by each power stage; and are placed outside the power transformer and the control transformer. 19. The pulse power generator according to claim 12, wherein the plurality of capacitor units are placed between the semiconductor switch modules positioned at front and rear sides of the planar square space defined by each power stage; and are placed outside the power transformer and the control transformer. 20. The pulse power generator according to any one of claim 12, 18 and 19, wherein the power loop and the control loop are bent in a “U” shape at an upper side of the power stage positioned at a top end portion of the generator, and constitute the power transformer and the control transformer, respectively, together with the windings connected to the rectifying diodes of the capacitor units and the windings connected to the power switch drivers while two opposite portions arranged in parallel with each other below the “U” shaped portion pass through the plurality of power stages arranged to be stacked vertically in order. 21. The pulse power generator according to claim 20, wherein the power loop and the control loop are arranged to cross each other at 90 degrees so as to solve problems associated with generation of noises between the power loop and the control loop and a magnetic flux. 22. The pulse power generator according to claim 20, wherein the control loop is mounted in such a fashion that the distance between two opposite portions thereof arranged in parallel with each other is relatively large as compared to the distance between two opposite portions of the power loop arranged in parallel with each other, and wherein the power transformer that the two parallel opposite portions of the power loop constitute is disposed at the center of the planar square space of each power stage, and the control transformers that the two parallel opposite portions of the control loop constitute are disposed at both opposite sides of the power transformer. 23. The pulse power generator according to claim 12, wherein a heat sink is securely mounted on the outer circumferential edge of each power stage in such a fashion as to come into contact with the outer surfaces of the semiconductor switch modules. 24. The pulse power generator according to claim 23, wherein the heat sink is formed in a “L” shape and four heat sinks are fixedly disposed horizontally on the outer circumferential edge of each power stage in such a fashion as to cover the entire portions of the outer circumferential edge of each power stage including four corners of each power stage to act as a shield plate and a casing. 25. The pulse power generator according to claim 23 or 24, wherein the heat sink is made of an aluminum material having an excellent heat radiating property. 26. The pulse power generator according to claim 12, wherein compensation windings having a subtractive polarity are connected between the power transformers of the upper and lower power stages that the power loop constitutes in the plurality of power stages stacked vertically.
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