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Ultra high speed uniform plasma processing system 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/50
  • C23C-016/503
  • C23C-016/509
  • H01L-021/306
  • C23F-001/00
  • C23C-016/06
  • C23C-016/22
출원번호 UP-0710457 (2004-07-13)
등록번호 US-7845309 (2011-01-31)
발명자 / 주소
  • Condrashoff, Robert S.
  • Fazio, James P.
  • Getty, James D.
  • Tyler, James S.
출원인 / 주소
  • Nordson Corporation
대리인 / 주소
    Wood, Herron & Evans, LLP
인용정보 피인용 횟수 : 73  인용 특허 : 14

초록

An apparatus for processing a substrate with a plasma. The apparatus includes first and second electrodes positioned with a spaced apart relationship. A separating ring has a vacuum-tight engagement with confronting surfaces of the first electrode and the second electrode to define an evacuatable pr

대표청구항

We claim: 1. An apparatus for processing a substrate with a plasma, the apparatus comprising: a first electrode; a second electrode; a separating member directly contacting said first electrode and directly contacting said second electrode and forming a sidewall extending from said first electrode

이 특허에 인용된 특허 (14)

  1. Shan Hongching (San Jose CA) Lee Evans (Milpitas CA) Wu Robert (Pleasanton CA), Adjustable dc bias control in a plasma reactor.
  2. Shan Hong Ching ; Lee Evans Yip ; Welch Michael D ; Wu Robert W ; Pu Bryan ; Luscher Paul Ernest ; Carducci James David ; Blume Richard, Adjusting DC bias voltage in plasma chambers.
  3. Okamura Hideaki,JPX ; Imai Shinichi,JPX ; Jiwari Nobuhiro,JPX ; Tohmori Yoko,JPX, Apparatus and method for plasma processing.
  4. Jingbao Liu ; Judy Wang ; Takehiko Komatsu ; Bryan Y Pu ; Kenny L Doan ; Claes Bjorkman ; Melody Chang ; Yunsang Kim ; Hongching Shan ; Ruiping Wang, Etch method using a dielectric etch chamber with expanded process window.
  5. Walko ; II Joseph Philip, High conductance plasma containment structure.
  6. Steinberg George N. (Westport CT) Reinberg Alan R. (Westport CT) Dalle Ave Jean (Stamford CT), High speed plasma etching system.
  7. Suntola Tuomo,FIX ; Lindfors Sven,FIX ; Soininen Pekka,FIX, Method and equipment for growing thin films.
  8. Maher, Jr., Joseph A.; Zafiropoulo, Arthur W., Multi-planar electrode plasma etching.
  9. Li Lumin ; Mueller George, Perforated plasma confinement ring in plasma reactors.
  10. Lenz Eric H. (San Jose CA) Dible Robert D. (Fremont CA), Plasma etching apparatus utilizing plasma confinement.
  11. Fischer, Andreas; Trussell, Dave; Kennedy, Bill; Loewenhardt, Peter, Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions.
  12. Mabuchi Hiroshi,JPX ; Tsuyuguchi Junya,JPX ; Katayama Katsuo,JPX ; Hayami Toshihiro,JPX ; Ida Hideo,JPX ; Murakami Tomomi,JPX ; Takeda Naohiko,JPX, Plasma processing apparatus utilizing a microwave window having a thinner inner area.
  13. Hirooka, Takaaki, Plasma processing device, its maintenance method, and its installation method.
  14. Stark Mark M. (Kamakura JPX) Nakajima Shu (Fujisawa CA JPX) Lachenbruch Roger B. (Sausalito CA), Xenon enhanced plasma etch.

이 특허를 인용한 특허 (73)

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  22. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
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  24. Nguyen, Son T.; Lubomirsky, Dmitry, Layered thin film heater and method of fabrication.
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  26. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.
  27. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.
  28. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  29. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  30. Lubomirsky, Dmitry, Oxygen compatible plasma source.
  31. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.
  32. Dhindsa, Rajinder; Marakhatnov, Alexei; Bailey, III, Andrew D., Plasma processing chamber with dual axial gas injection and exhaust.
  33. Dhindsa, Rajinder; Marakhtanov, Alexei; Bailey, III, Andrew D., Plasma processing chamber with dual axial gas injection and exhaust.
  34. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
  35. Tyler, James S.; Getty, James D.; Condrashoff, Robert S.; Bolden, II, Thomas V., Plasma treatment system.
  36. Tyler, James Scott; Getty, James D.; Bolden, II, Thomas V.; Condrashoff, Robert Sergei, Plasma treatment system.
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  38. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Plasma-free metal etch.
  39. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
  40. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
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  42. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  43. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  44. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
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  59. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
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  66. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  67. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  68. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
  69. Park, Soonam; Zhu, Yufei; Suarez, Edwin C.; Ingle, Nitin K.; Lubomirsky, Dmitry; Huang, Jiayin, Systems and methods for internal surface conditioning assessment in plasma processing equipment.
  70. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.
  71. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
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  73. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
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