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A photovoltaic nanostructure according to one embodiment of the present invention includes an electrically conductive nanocable coupled to a first electrode, a second electrode extending along at least two sides of the nanocable, and a photovoltaically active p-n junction formed between the nanocabl

A photovoltaic nanostructure according to one embodiment of the present invention includes an electrically conductive nanocable coupled to a first electrode, a second electrode extending along at least two sides of the nanocable, and a photovoltaically active p-n junction formed between the nanocable and the second electrode. A photovoltaic array according to one embodiment includes a plurality of photovoltaic nanostructures as recited above. Methods for forming nanostructures are also presented.

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What is claimed is: 1. A photovoltaic array, comprising: a plurality of photovoltaic nanostructures, each of the nanostructures comprising: an electrically conductive layer; an insulating layer positioned over the electrically conductive layer, the insulating layer having a plurality of holes there

What is claimed is: 1. A photovoltaic array, comprising: a plurality of photovoltaic nanostructures, each of the nanostructures comprising: an electrically conductive layer; an insulating layer positioned over the electrically conductive layer, the insulating layer having a plurality of holes therein; a plurality of electrically conductive nanocables in communication with the electrically conductive layer such that the nanocables extend through the holes in the insulating layer and protrude therefrom; a second electrode extending along at least two sides of the nanocable; and a photovoltaically active p-n junction formed between the nanocable and the second electrode, wherein axes of the nanocables are parallel to each other, wherein the nanostructures are spaced from one another with no solid material between portions thereof. 2. The photovoltaic array as recited in claim 1, wherein axes of the photovoltaic nanostructures are tilted from a direction normal to the array. 3. The photovoltaic array as recited in claim 1, wherein the nanostructures are electrically isolated from one another. 4. The photovoltaic array as recited in claim 1, further comprising a conductive strip coupled to the second electrode and extending across at least a portion of the array. 5. The photovoltaic array as recited in claim 1, wherein at least some of the nanocables are constructed of silicon. 6. A photovoltaic array, comprising: a plurality of photovoltaic nanostructures, each of the nanostructures comprising: an electrically conductive layer; an insulating layer positioned over the electrically conductive layer, the insulating layer having a plurality of holes therein; a plurality of electrically conductive nanocables in communication with the electrically conductive layer such that the nanocables extend through the holes in the insulating layer and protrude therefrom; a second electrode extending along at least two sides of the nanocables; and photovoltaically active p-n junctions formed between the nanocables and the second electrode, wherein the nanostructures are spaced from one another with no solid material between portions thereof. 7. The photovoltaic array as recited in claim 6, wherein an upper surface of the insulating layer is planar. 8. A method for forming a photovoltaic array, comprising: forming a plurality of photovoltaic nanostructures by creating holes in an insulating layer positioned over an electrically conductive layer; and forming nanocables in the holes such that the nanocables extend through the holes in the insulating layer and protrudes therefrom, the nanocables being in communication with the electrically conductive layer, wherein each of the nanostructures comprises: the electrically conductive laver; the insulating layer positioned over the electrically conductive layer; the plurality of electrically conductive nanocables in communication with the electrically conductive layer; a second electrode extending along at least two sides of the nanocables; and photovoltaically active p-n junctions formed between the nanocables and the second electrode, wherein the nanostructures are spaced from one another with no solid material between portions thereof. 9. The method as recited in claim 8, wherein the nanocable is constructed of silicon. 10. The method as recited in claim 8, wherein the nanocable is elongate. 11. The method as recited in claim 8, further comprising forming a second electrode over the nanocable. 12. The method as recited in claim 11, further comprising forming a layer positioned between the nanocable and the second electrode for forming a photovoltaic p-n junction with the nanocable. 13. The method as recited in claim 12, wherein the nanocable is constructed of silicon, wherein the layer is constructed of silicon. 14. The method as recited in claim 12, wherein the layer is formed at least in part by chemical vapor deposition. 15. The method as recited in claim 11, further comprising forming a pair of layers positioned between the nanocable and the second electrode for creating a photovoltaic p-n junction. 16. The method as recited in claim 15, wherein the pair of layers are formed at least in part by chemical vapor deposition. 17. The method as recited in claim 15, further comprising forming a second electrically conductive layer directly on the nanocable. 18. The method as recited in claim 8, wherein the electrically conductive layer is coupled to a third electrode lying along a parallel plane thereto by an electrically conductive via. 19. The method as recited in claim 8, further comprising forming a layer over the nanocable by electroplating for strengthening the nanocable. 20. The method as recited in claim 8, further comprising depositing a seed, the nanocable being formed under the seed. 21. A method for forming a photovoltaic array having a plurality of photovoltaic nanostructures, comprising: forming a plurality of photovoltaic nanostructures by forming an insulating layer on a silicon-containing conductive layer; creating holes in the insulating layer; forming nanocables in the holes such that the nanocables extend through the holes in the insulating layer and protrude therefrom, the nanocables being in communication with the electrically conductive layer; and forming a second electrode over the nanocables, wherein each of the nanostructures comprises: the electrically conductive layer; the insulating layer positioned over the electrically conductive layer; the plurality of electrically conductive nanocables in communication with the electrically conductive laver; a second electrode extending along at least two sides of the nanocables; and photovoltaicallv active p-n junctions formed between the nanocables and the second electrode, wherein the nanostructures are spaced from one another with no solid material between portions thereof. 22. The method as recited in claim 21, further comprising forming a layer positioned between the nanocable and the second electrode for forming a photovoltaic p-n junction with the nanocable. 23. The method as recited in claim 22, wherein the nanocable is constructed of silicon, wherein the layer is constructed of silicon. 24. The method as recited in claim 22, wherein the layer forming the photovoltaic p-n junction with the nanocable is formed at least in part by chemical vapor deposition. 25. The method as recited in claim 21, further comprising forming a pair of layers positioned between the nanocable and the second electrode for creating a photovoltaic p-n junction. 26. The method as recited in claim 25, wherein the pair of layers are formed at least in part by chemical vapor deposition. 27. The method as recited in claim 21, wherein the electrically conductive layer is coupled to a third electrode lying along a parallel plane thereto by an electrically conductive via. 28. The method as recited in claim 21, further comprising forming a layer over the nanocable by electroplating for strengthening the nanocable. 29. A method for forming a nanostructure, comprising: forming a plurality of photovoltaic nanostructures by creating a hole in an insulating layer overlying a conductive layer; forming a nanocable in the hole such that the nanocable extends through the hole in the insulating layer and protrudes therefrom, the nanocables being in communication with the electrically conductive layer; forming a pair of layers positioned between the nanocable and a second electrode, the pair of layers creating a photovoltaic p-n junction, wherein each of the nanostructures comprises: the electrically conductive layer; the insulating layer positioned over the electrically conductive laver; the plurality of electrically conductive nanocables in communication with the electrically conductive laver; the second electrode extending along at least two sides of the nanocables; and the photovoltaically active p-n junctions formed between the nanocables and the second electrode, wherein the nanostructures are spaced from one another with no solid material between portions thereof. 30. A method for forming a photovoltaic array, comprising: forming a silicon nanocable on a silicon substrate such that the nanocable has a free end; forming at least one layer over sides and the free end of the nanocable; and forming an electrode over the nanocable, wherein each of the nanostructures comprises: the electrically conductive layer, the insulating layer positioned over the electrically conductive layer, the plurality of electrically conductive nanocables in communication with the electrically conductive layer, a second electrode extending along at least two sides of the nanocables, and the photovoltaically active p-n junctions formed between the nanocables and the second electrode, wherein the nanostructures are spaced from one another with no solid material between portions thereof. 31. The method as recited in claim 30, wherein the electrode completely covers the at least one layer. 32. The method as recited in claim 30, wherein forming the at least one free layer further comprises forming a layer positioned between the nanocable and the electrode for forming a photovoltaic p-n junction with the nanocable. 33. The method as recited in claim 30, wherein forming the at least one free layer further comprises forming a pair of layers positioned between the nanocable and the electrode, the pair of layers creating a photovoltaic p-n junction. 34. The method as recited in claim 33, wherein the pair of layers are formed at least in part by chemical vapor deposition. 35. The method as recited in claim 30, further comprising forming a layer over the nanocable by electroplating for strengthening the nanocable. 36. The method as recited in claim 30, wherein a third electrode lies along a parallel plane to the silicon substrate and is coupled to the first electrode by an electrically conductive via. 37. The method as recited in claim 30, further comprising depositing a seed, the nanocable being formed under the seed. 38. A method for forming a photovoltaic array, comprising: forming each of a plurality of photovoltaic nanostructures by applying a cap to a wafer; removing material from the wafer in areas not covered by the cap for defining a nanocable; forming at least one layer over the nanocable for forming a photovoltaic p-n junction with the nanocable; and forming a second electrode in communication with the photovoltaic p-n junction, wherein each of the nanostructures comprises: an electrically conductive layer; an insulating layer positioned over the electrically conductive layer, the insulating layer having a plurality of holes therein, a plurality of electrically conductive nanocables in communication with the electrically conductive layer such that the nanocables extend through the holes in the insulating layer and protrude therefrom; a second electrode extending along at least two sides of the nanocables; and photovoltaically active p-n junctions formed between the nanocables and the second electrode, wherein the nanostructures are spaced from one another with no solid material between portions thereof. 39. The method as recited in claim 38, wherein the photovoltaic p-n junction is formed with the nanocable. 40. The method as recited in claim 38, wherein forming the at least one layer further comprises forming a pair of layers positioned between the nanocable and the second electrode for creating the photovoltaic p-n junction. 41. The method as recited in claim 40, wherein the pair of layers are formed at least in part by chemical vapor deposition. 42. The method as recited in claim 40, further comprising forming an electrically conductive layer directly on the nanocable, the pair of layers forming the photovoltaic p-n junction overlying the electrically conductive layer. 43. The method as recited in claim 38, further comprising forming a layer over the nanocable by electroplating for strengthening the nanocable. 44. The method as recited in claim 38, wherein a third electrode lies along a parallel plane to the silicon substrate and is coupled to the first electrode by an electrically conductive via. 45. The method as recited in claim 38, further comprising depositing a seed, the nanocable being formed under the seed. 46. A photovoltaic array, comprising: a plurality ofphotovoltaic nanostructures, the nanostructures comprising: an electrically conductive layer an insulating layer positioned over the electrically conductive layer, the insulating layer having a plurality of holes therein, an array of electrically conductive silicon nanocables in communication with the electrically conductive layer such that the nanocables extend through the holes in the insulating layer and protrude therefrom; a seed layer on each of the silicon nanocables; a second electrode extending along at least two sides of the nanocables; and photovoltaically active p-n junctions formed between the nanocables and the second electrode. at least one layer of the p-n junction being electroplated on each of the seed layers, wherein the nanostructures are spaced from one another with no solid material between portions thereof. 47. The photovoltaic array as recited in claim 46, wherein the seed layer is formed by chemical vapor deposition. 48. The photovoltaic array as recited in claim 46, wherein the seed layer is gold. 49. The photovoltaic array as recited in claim 46, wherein the at least one layer includes a layer of CdTe electroplated on the seed layer. 50. The photovoltaic array as recited in claim 46, wherein the at least one layer includes a layer of CdS electroplated on the seed layer. 51. The photovoltaic array as recited in claim 46, wherein the at least one layer includes layers of CdTe and CdS formed by electroplating over the seed layer. 52. The photovoltaic array as recited in claim 46, wherein the at least one layer comprises a pair of layers positioned between the nanocable and a second electrode for creating a photovoltaic p-n junction. 53. The photovoltaic array as recited in claim 46, further comprising an electrode over the at least one layer, wherein the second electrode forms a separate electrical contact to each of the at least one layers. 54. The photovoltaic array as recited in claim 46, wherein the at least one layer strengthens the nanocable to which it is coupled. 55. The photovoltaic array as recited in claim 46, further comprising a third electrode lying along a parallel plane to the conductive layer and coupled to the conductive layer by an electrically conductive via. 56. The photovoltaic array as recited in claim 1, wherein each of the nanocables has a constant cross-sectional diameter along a longitudinal axis thereof. 57. The photovoltaic array as recited in claim 6, wherein each of the nanocables has about a constant cross-sectional diameter at all points along a longitudinal axis thereof. 58. The photovoltaic array as recited in claim 6, wherein longitudinal axes of the nanocables are parallel to each other. 59. The photovoltaic array as recited in claim 46, wherein the nanocables each have about a constant cross-sectional diameter at all points along a longitudinal axis thereof. 60. The photovoltaic array as recited in claim 46, wherein longitudinal axes of the nanocables are parallel to each other. 61. The photovoltaic array as recited in claim 46, wherein the nanocables are spaced from one another with no solid material between portions thereof. 62. The photovoltaic array as recited in claim 6, wherein the nanocable is constructed of silicon. 63. The photovoltaic array as recited in claim 62, wherein the nanocable is constructed of at least one of p-silicon and n-silicon. 64. The photovoltaic array as recited in claim 6, wherein the nanocable is elongate and has one axial end coupled to the first electrode. 65. The photovoltaic array as recited in claim 6, further comprising a layer positioned between the nanocable and the second electrode for forming the p-n junction with the nanocable. 66. The photovoltaic array as recited in claim 6, further comprising a third electrode lying along a parallel plane to the electrically conductive layer and coupled to the electrically conductive layer by an electrically conductive via. 67. The photovoltaic array as recited in claim 6, wherein axes of the photovoltaic nanostructures are tilted from a direction normal to the array. 68. The photovoltaic array as recited in claim 6, wherein the nanostructures are electrically isolated from one another. 69. The photovoltaic array as recited in claim 6, further comprising a conductive strip coupled to the second electrode and extending across at least a portion of the array. 70. The photovoltaic array as recited in claim 6, wherein at least some of the nanocables are constructed of silicon. 71. The photovoltaic array as recited in claim 6, wherein at least some of the nanocables are constructed of a metal. 72. The photovoltaic array as recited in claim 6, wherein longitudinal axes of at least some of the nanocables are parallel to one another. 73. The photovoltaic array as recited in claim 6, wherein longitudinal axes of the photovoltaic nanostructures are oriented along a direction normal to the array. 74. The photovoltaic array as recited in claim 6, further comprising a seed layer over each of the nanocables. 75. The photovoltaic array as recited in claim 74, further comprising an electroplated layer on each of the seed layers. 76. The photovoltaic array as recited in claim 74, wherein at least one layer of the p-n junction is electroplated on each of the seed layers. 77. The photovoltaic array as recited in claim 6, wherein at least one layer forming the p-n junction includes CdTe. 78. The photovoltaic array as recited in claim 77, wherein the at least one layer having CdTe is electroplated on a seed layer overlying the nanocables. 79. The photovoltaic array as recited in claim 6, wherein at least one layer forming the p-n junction includes CdS. 80. The photovoltaic array as recited in claim 79, wherein the at least one layer having CdS is electroplated on a seed layer overlying the nanocables. 81. The photovoltaic array as recited in claim 6, wherein layers forming the p-n junctions includes layers of CdTe and CdS. 82. The photovoltaic array as recited in claim 6, wherein each of the p-n junctions is formed by a pair of layers positioned between the nanocables and the second electrode. 83. The photovoltaic array as recited in claim 6, wherein the second electrode forms a separate electrical contact to each of the nanostructures. 84. The photovoltaic array as recited in claim 6, further comprising at least one layer electroplated above each of the nanocables, wherein the at least one layer strengthens the nanocable to which it is coupled. 85. The photovoltaic array as recited in claim 6, further comprising a third electrode lying along a parallel plane to the electrically conductive layer and coupled to the electrically conductive layer by an electrically conductive via. 86. The photovoltaic array as recited in claim 1, wherein at least one layer forming the p-n junction includes CdTe. 87. The photovoltaic array as recited in claim 85, wherein the at least one layer having CdTe is electroplated on a seed layer overlying the nanocables. 88. The photovoltaic array as recited in claim 1, wherein at least one layer forming the p-n junction includes CdS. 89. The photovoltaic array as recited in claim 88, wherein the at least one layer having CdS is electroplated on a seed layer overlying the nanocables. 90. The photovoltaic array as recited in claim 1, wherein layers forming the p-n junctions includes layers of CdTe and CdS. 91. The photovoltaic array as recited in claim 1, wherein each of the p-n junctions is formed by a pair of layers positioned between the nanocables and the second electrode. 92. The photovoltaic array as recited in claim 1, wherein the second electrode forms a separate electrical contact to each of the nanostructures. 93. The photovoltaic array as recited in claim 1, further comprising at least one layer electroplated above each of the nanocables, wherein the at least one layer strengthens the nanocable to which it is coupled. 94. The photovoltaic array as recited in claim 1, further comprising a third electrode lying along a parallel plane to the electrically conductive layer and coupled to the electrically conductive layer by an electrically conductive via. 95. The method as recited in claim 8, wherein at least one layer forming the p-n junction includes CdTe. 96. The method as recited in claim 95, wherein the at least one layer having CdTe is electroplated on a seed layer overlying the nanocables. 97. The method as recited in claim 8, wherein at least one layer forming the p-n junction includes CdS. 98. The method as recited in claim 97, wherein the at least one layer having CdS is electroplated on a seed layer overlying the nanocables. 99. The method as recited in claim 8, wherein layers forming the p-n junctions includes layers of CdTe and CdS. 100. The method as recited in claim 8, wherein each of the p-n junctions is formed by a pair of layers positioned between the nanocables and the second electrode. 101. The method as recited in claim 8, wherein the second electrode forms a separate electrical contact to each of the nanostructures. 102. The method as recited in claim 8, further comprising at least one layer electroplated above each of the nanocables, wherein the at least one layer strengthens the nanocable to which it is coupled. 103. The method as recited in claim 8, further comprising a third electrode lying along a parallel plane to the electrically conductive layer and coupled to the electrically conductive layer by an electrically conductive via. 104. The method as recited in claim 21, wherein at least one layer forming the p-n junction includes CdTe. 105. The method as recited in claim 104, wherein the at least one layer having CdTe is electroplated on a seed layer overlying the nanocables. 106. The method as recited in claim 21, wherein at least one layer forming the p-n junction includes CdS. 107. The method as recited in claim 106, wherein the at least one layer having CdS is electroplated on a seed layer overlying the nanocables. 108. The method as recited in claim 21, wherein layers forming the p-n junctions includes layers of CdTe and CdS. 109. The method as recited in claim 21, wherein each of the p-n junctions is formed by a pair of layers positioned between the nanocables and the second electrode. 110. The method as recited in claim 21, wherein the second electrode forms a separate electrical contact to each of the nanostructures. 111. The method as recited in claim 21, further comprising at least one layer electroplated above each of the nanocables, wherein the at least one layer strengthens the nanocable to which it is coupled. 112. The method as recited in claim 21, further comprising a third electrode lying along a parallel plane to the electrically conductive layer and coupled to the electrically conductive layer by an electrically conductive via. 113. The method as recited in claim 29, wherein at least one of the pair of layers creating the photovoltaic p-n junction includes a layer of CdTe. 114. The method as recited in claim 29, wherein at least one of the pair of layers creating the photovoltaic p-n junction includes a layer of CdS. 115. The method as recited in claim 29, wherein the pair of layers creating the photovoltaic p-n junction include layers of CdTe and CdS. 116. The method as recited in claim 29, wherein the second electrode forms a separate electrical contact to each photovoltaic p-n junction. 117. The method as recited in claim 29, wherein the pair of layers creating the photovoltaic p-n junction strengthens the nanocable to which it is coupled. 118. The method as recited in claim 29, further comprising a third electrode lying along a parallel plane to the conductive layer and coupled to the conductive layer by an electrically conductive via. 119. The method as recited in claim 30, wherein the at least one layer includes a layer of CdTe electroplated on a seed layer. 120. The method as recited in claim 30, wherein the at least one layer includes a layer of CdS electroplated on a seed layer. 121. The method as recited in claim 30, wherein the at least one layer includes layers of CdTe and CdS formed by electroplating over a seed layer. 122. The method as recited in claim 30, wherein the at least one layer comprises a pair of layers positioned between the nanocable and the second electrode for creating a photovoltaic p-n junction. 123. The method as recited in claim 30, wherein the second electrode forms a separate electrical contact to each of the at least one layers. 124. The method as recited in claim 30, wherein the at least one layer strengthens the nanocable to which it is coupled. 125. The method as recited in claim 30, further comprising a third electrode lying along a parallel plane to the conductive layer and coupled to the conductive layer by an electrically conductive via. 126. The method as recited in claim 38, wherein the at least one layer includes a layer of CdTe electroplated on a seed layer. 127. The method as recited in claim 38, wherein the at least one layer includes a layer of CdS electroplated on a seed layer. 128. The method as recited in claim 38, wherein the at least one layer includes layers of CdTe and CdS formed by electroplating over a seed layer. 129. The method as recited in claim 38, wherein the at least one layer comprises a pair of layers positioned between the nanocable and the second electrode for creating a photovoltaic p-n junction. 130. The method as recited in claim 38, wherein the second electrode forms a separate electrical contact to each of the at least one layers. 131. The method as recited in claim 38, wherein the at least one layer strengthens the nanocable to which it is coupled. 132. The method as recited in claim 38, further comprising a third electrode lying along a parallel plane to the conductive layer and coupled to the conductive layer by an electrically conductive via.