Electrolytic capacitor anode treated with an organometallic compound
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01G-004/06
H01G-005/013
H01G-009/00
출원번호
UP-0017463
(2008-01-22)
등록번호
US-7852615
(2011-02-10)
발명자
/ 주소
Breznova, Hana
Biler, Martin
출원인 / 주소
AVX Corporation
대리인 / 주소
Dority & Manning, P.A.
인용정보
피인용 횟수 :
1인용 특허 :
73
초록▼
An electrolytic capacitor that contains an anodically oxidized anode that is incorporated with an additional metallic element is provided. More specifically, the metallic element is built into the valve metal pentoxide of the dielectric layer. In one particular embodiment, the addition of the metall
An electrolytic capacitor that contains an anodically oxidized anode that is incorporated with an additional metallic element is provided. More specifically, the metallic element is built into the valve metal pentoxide of the dielectric layer. In one particular embodiment, the addition of the metallic element results in a niobium pentoxide dielectric that contains closely packed units of O atoms, Nb6 octahedral, and metal atoms (“A”) that serve as counter cations. The use of relatively small electropositive metal atoms (A″) helps fill the tetrahedral (e.g., Al, Si, Ti, Mg, or Mn), octahedral (e.g., Nb, V, Mg, or Mn) and trigonal bipyramid (e.g., V, Nb) interstices of the crystals. The stability of capacitor leakage current may be improved by variation in this crystal structure.
대표청구항▼
What is claimed is: 1. A method for forming a capacitor anode, the method comprising: forming an anode body that comprises a valve metal composition; and anodically oxidizing the anode body in the presence of an electrolyte to form a dielectric layer, wherein the electrolyte comprises an organometa
What is claimed is: 1. A method for forming a capacitor anode, the method comprising: forming an anode body that comprises a valve metal composition; and anodically oxidizing the anode body in the presence of an electrolyte to form a dielectric layer, wherein the electrolyte comprises an organometallic compound in an amount of from about 0.1 wt. % to about 20 wt. %. 2. The method of claim 1, wherein the organometallic compound contains at least one reactive functional group bonded to a metal atom. 3. The method of claim 2, wherein the metal atom is silicon, titanium, aluminum, vanadium, niobium, manganese, magnesium, or a combination thereof. 4. The method of claim 1, wherein the organometallic compound includes an organosilane. 5. The method of claim 4, wherein the organosilane is an alkoxysilane. 6. The method of claim 5, wherein the alkoxysilane is an epoxyalkoxysilane. 7. The method of claim 1, wherein the organometallic compound constitutes from about 0.5 to about 10 wt. % of the electrolyte. 8. The method of claim 1, wherein the electrolyte further contains an acid. 9. The method of claim 1, wherein the anode body is formed by compacting a powder to form a pressed pellet and sintering the pressed pellet. 10. The method of claim 1, wherein the anode body is dipped into the electrolyte. 11. The method of claim 1, wherein the valve metal composition contains tantalum, niobium, or an electrically conductive oxide thereof. 12. The method of claim 1, wherein the valve metal composition contains an oxide of niobium having an atomic ratio of niobium to oxygen of 1:1.0 ±0.3. 13. The method of claim 1, wherein the valve metal composition contains an oxide of niobium having an atomic ratio of niobium to oxygen of 1:1.0 ±0.1. 14. A capacitor anode formed according to the method of claim 1. 15. An electrolytic capacitor comprising the capacitor anode of claim 14, further comprising an electrolyte layer overlying the dielectric layer. 16. An electrolytic capacitor comprising: an anode body containing tantalum, niobium, or an electrically conductive oxide thereof; a dielectric layer overlying the anode body, the dielectric layer containing a metallic element derived from an organometallic compound, the metallic element including silicon; and an electrolyte layer overlying the dielectric layer. 17. The electrolytic capacitor of claim 16, wherein the metallic element constitutes about 100 parts per million or more of the dielectric layer. 18. The electrolytic capacitor of claim 16, wherein the metallic element constitutes about 200 to about 500,000 parts per million of the dielectric layer. 19. The electrolytic capacitor of claim 16, wherein the anode body contains an oxide of niobium having an atomic ratio of niobium to oxygen of 1:1.0 ±0.3. 20. The electrolytic capacitor of claim 16, wherein the anode body contains an oxide of niobium having an atomic ratio of niobium to oxygen of 1:1.0 ±0.1. 21. The electrolytic capacitor of claim 16, further comprising at least an additional layer that overlies the electrolyte layer, the additional layer including a carbon layer, silver layer, or a combination thereof. 22. The electrolytic capacitor of claim 16, further comprising an anode lead that extends from the anode body. 23. The electrolytic capacitor of claim 22, further comprising: a cathode termination that is in electrical communication with the electrolyte layer; an anode termination that is in electrical communication with the anode body; and a case that encapsulates the capacitor and leaves at least a portion of the anode and cathode terminations exposed. 24. The electrolytic capacitor of claim 16, wherein the electrolyte layer contains a conductive polymer. 25. The electrolytic capacitor of claim 16, wherein the electrolyte layer contains manganese dioxide.
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